QTP 152503:PSoC4A-DS2 Device Family S8SPF-10R Technology, Fab 4 CMI

Document No. 002-10630 Rev. **
ECN #: 5074150
Cypress Semiconductor
Product Qualification Report
QTP# 152503 VERSION**
January 2016
PSoC4A-DS2 Device Family
S8SPF-10R Technology, Fab 4 CMI
CY8C4246FNI
CY8C4245FNI
PROGRAMMABLE SYSTEM-ON-CHIP
(PSOC(R))
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos (HSTO)
Reliability Engineer
Reviewed By:
Zhaomin Ji (ZIJ)
Reliability Manager
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
PRODUCT QUALIFICATION HISTORY
QTP
Number
083401
113905
123502
152503
Description of Qualification Purpose
Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC
Krypton Device
Qualify device 8C20400BC S8P12-10P Technology Fabricated at Fab4
(CMI)
Qualification of PSoC4A Device 8C44200AC, S8PF-10R Technology in
CMI (Fab 4)
Qualification of PSoC4A-DS2 Device (8C48000X/8F48000x), S8SPF10R Technology in CMI (Fab4)
Company Confidential
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Page 2 of 19
Date
Jan 09
Jan 12
Apr 13
Nov 15
Document No. 002-10630 Rev. **
ECN #: 5074150
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualification of PSoC4A-DS2 Device (8C48000X/8F48000x), S8SPF-10R Technology in CMI
(Fab4)
Marketing Part #:
CY8C4246FNI-D412T, CY8C4245FNI-D402
Device Description:
1.8V core, Commercial/ Industrial Programmable System on a Chip
Cypress Division:
Cypress Semiconductor – Programmable Systems Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal Composition:
Metal 1: 100A Ti / 3200A Al 0.5%Cu / 300A TiW
Metal 2: 100A Ti / 3200A Al 0.5%Cu / 350A TiW
Metal 3: 150A Ti / 7200A Al 0.5%Cu / 350A TiW
Metal 4: 150A Ti / 7200A Al 0.5%Cu / 350A TiW
Metal 5: 300A Ti / 12000A Al 0.5%Cu / 300A TiW
1,000A Oxide /6,000A Nitride
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): S8 / 0.13u
SiO2 / 32A & SiO2 / 120A
Gate Oxide Material/Thickness (MOS):
Name/Location of Die Fab (prime) Facility:
Fab 4, CMI-Minnesota
Die Fab Line ID/Wafer Process ID:
S8SPF-10P
PACKAGE AVAILABILITY
PACKAGE
WIRE MATERIAL
ASSEMBLY FACILITY SITE
QTP NUMBER
25-Ball WLCSP
N/A
DT
144402
145201
Note: Package Qualification details upon request.
Company Confidential
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Page 3 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
SP28
Package Outline, Type, or Name:
28L SSOP (210mils)
Mold Compound Name/Manufacturer:
KE-G3000DA
Mold Compound Flammability Rating:
N/A (not low alpha mold compound)
Mold Compound Alpha Emission Rate:
UL 94 V=0 pass
Oxygen Rating Index:
65%
Lead Frame Designation:
FMP
Lead Frame Material:
Cu
Substrate Material:
N/A
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI-509
Bond Diagram Designation
001-72732
Wire Bond Method:
Thermosonic
Wire Material/Size:
0.8mil / CuPd
Thermal Resistance Theta JA C/W:
47.6
Package Cross Section Yes/No:
Y
Assembly Process Flow:
001-87834
Name/Location of Assembly (prime) facility:
CML-RA
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE, Taiwan (G)
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
FN25A
25-Ball Wafer Level Chip Scale Package (WLCSP)
(2.07 x 2.11 x 0.55mm)
Die Backside Preparation Method:
Backgrind
Die Separation Method:
Saw
Solder Ball/Bump Material:
SAC405
Bonding Method:
Bump/ RDL
Bond Diagram Designation:
001-97945
Thermal Resistance Theta JA °C/W:
48 degC/Watt
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-74876M
Name/Location of Assembly (prime) facility:
DT-Philippines
MSL Level
1
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
DECA, Philippine (DT)
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Page 5 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
200C, 4hrs
MIL-STD-883, Method 883-2011
Acoustic Microscopy
Age Bond Strength
Bond Pull
MIL-STD-883 – Method 2011,
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrostatic Discharge
Human Body Model (ESD-HBM)
Electrostatic Discharge
Machine Model (ESD-MM)
150°C, No Bias
JESD22-A117 and JESD22-A103
Test to determine the existence and extent of cracks,
Criteria: No Package Crack
125°C, 8.5V
JESD78
500V/1,000V/1,250V
JESD22-C101
1,100V/1,600V/2,200V /3,300V
JESD22, Method A114
200V, 220V, 275V, 330V
JESD22-A115
Endurance Test
MIL-STD-883, Method 883-1033/ JESD22-A117
Data Retention
Dye Penetrant Test
Dynamic Latch-up
High Accelerated Saturation Test (HAST)
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Early Failure Rate, Regulator On
High Temperature Operating Life
Latent Failure Rate
High Temperature Steady State life
JEDEC STD 22-A110: 130°C, 85% RH, 5.25V/5.5V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
Dynamic Operating Condition, Vcc Max=2.1V/2.07V, 150°C
JESD22-A-108
Dynamic Operating Condition, Vcc Max=5V, 125°C/150°C
Dynamic Operating Condition, Vcc Max=2.07V/6V, 150°C
JESD22-A-108
Dynamic Operating Condition, Vcc Max=2.1V/2.07V, 150°C
JESD22-A-108
Static Operating Condition, Vcc Max=2.1V, 150°C
JESD22-A-108
Result
P/F
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
Internal Visual
MIL-STD-883-2014
P
Low Temperature Operating Life
Dynamic Operating Condition, -30°C, 2.1V
JESD22-A108
P
Low Temperature Storage Life
-40°C, No Bias
P
Pressure Cooker
JESD22-A102:121°C /100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
P
SEM Analysis
MIL-STD-883, Method 2018
P
Static Latch-up
Temperature Cycle
Thermal Shock
85C/125C, +/-140mA
85C, +/-180mA
85C, +/- 200mA
JESD 78
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
MIL-STD-883, Method 1011, Condition B, -55°C to 125°C and
JESD22-A106, Condition C, -55°C to 125°C
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Page 6 of 19
P
P
P
Document No. 002-10630 Rev. **
ECN #: 5074150
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate
1,550 Devices
0
N/A
N/A
0 PPM
High Temperature Operating Life
Long Term Failure Rate
718,500 DHRs
0
0.7
170
8 FIT
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
1 Early Failure Rate was computed from QTPs 152503
2 Long Term Failure Rate was computed from QTPs 083401, 113905 & 123502 LFR Data.
Company Confidential
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Page 7 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 083401
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
CY8C20466 (8C20466AC)
4804681
610822808
Malaysia-CA COMP
COMP3
0
3
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
3
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
4835945
610847274
Malaysia-CA
500
78
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
500
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
1000
78
0
CY8C20566 (8C20566AC)
4810486
610830786
CML-R
168
77
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
168
77
0
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
168
79
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
168
76
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
500
9
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
9
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
9
0
N/A
N/A
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8C20066 (8C20066AC)
4810486
STRESS: STATIC LATCH-UP (85C, 8.25V)
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4837410
410.23.02
Promex
6
0
COMP
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Page 8 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
2200
8
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
2200
8
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
2200
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
3300
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
3300
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
3300
3
0
STRESS: ESD-MACHINE MODEL, (200V)
CY8C20236A (8C202662A) 4126494
611143319
KOREA-L
200
5
0
CY8C20236A (8C202662A) 4125077
611143627
PHIL-MB
200
5
0
STRESS: ESD-MACHINE MODEL, (220V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
220
6
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
220
6
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
220
6
0
STRESS: ESD-MACHINE MODEL, (275V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
275
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
275
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
275
3
0
STRESS: ESD-MACHINE MODEL, (330V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
330
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
330
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
330
3
0
STRESS: DYNAMIC LATCH-UP (125C, 8.5V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
5
0
Company Confidential
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Page 9 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
48
1002
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
48
1008
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
48
1004
1
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
48
1004
0
STRESS:
Read NV Latch (1)
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
48
45
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
96
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
500
390
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
80
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
77
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
500
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
500
77
0
(1)
Destroyed during failure analysis
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Page 10 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
256
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
128
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
333
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
288
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
77
0
Company Confidential
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Page 11 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
ER114031
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
1000
100
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias
CY8C20236A (8C202662A) 4137730
611155459
L-KOREA
0
Company Confidential
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Page 12 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 113905
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
COMP
15
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
COMP
15
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
COMP
10
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
COMP
10
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
COMP
10
0
STRESS: BOND PULL
STRESS: DATA RETENTION, 150C
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
1000
80
0
4130520
611147744
G-TAIWAN
COMP
15
0
4130520
611147744
G-TAIWAN
168
80
0
CML-RA
COMP
9
0
COMP
3
0
COMP
8
0
STRESS: DYE PENETRANT TEST
CY8CTMA443 (8C20401A)
STRESS : ENDURANCE
CY8CTMA443 (8C20401A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8CTMA443 (8C20401B)
4140358
611153802
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114, (1100V)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114, (1600V)
CY8CTMA443 (8C20401B)
4140358
611153801
CML-RA
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
128
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
128
78
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REG-ON (150C, 6.0V, Vcc Max)
CY8CTMA443 (8C20401A)
4130520
611147745
G-TAIWAN
48
45
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 113905
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
48
1492
0
CY8CTMA443 (8C20401B)
4140358
611153800
CML-RA
48
1074
2
ISB Deep Sleep, CAR#201201012
CY8CTMA443 (8C20401B)
4140358
611153800
CML-RA
48
418
1
ISB Deep Sleep, CAR#201201012
CY8CTMA443 (8C20401B)
4141585
611156224
G-TAIWAN
48
1500
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
48
1000
0
CY8CTMA443 (8C20401A)
4131142
611148870
G-TAIWAN
48
500
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
80
116
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
500
116
0
4130520
611147744
G-TAIWAN
COMP
5
0
STRESS: INTERNAL VISUAL
CY8CTMA443 (8C20401A)
STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
168
77
0
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
288
77
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
168
80
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
288
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
168
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
288
80
0
STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
500
83
0
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
1000
83
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
500
79
0
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
1000
79
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4129433
611148871
G-TAIWAN
1000
80
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
500
80
0
CY8CTMA443 (8C20401A)
4131142
611148867
G-TAIWAN
1000
80
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 113905
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: THERMAL SHOCK (COND. B, -55C TO 125C)
CY8CTMA443 (8C20401A)
4130520
611147744
G-TAIWAN
200
80
0
G-TAIWAN
COMP
2
0
COMP
6
0
STRESS: THERMAL JUNCTION MEASUREMENT
CY8CTMA443 (8C20401A)
4130520
611147744
STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, +/-140mA)
CY8CTMA443 (8C20401B)
4140358
611153802
CML-RA
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 123502
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
500
70
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
1000
70
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
168
80
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
500
80
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C4245 (8CC44200A)
4251883
611302905
TAIWAN-G COMP
9
0
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
9
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
COMP
9
0
611302905
TAIWAN-G COMP
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1000V)
CY8C4245 (8CC44200A)
4251883
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
3
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
COMP
3
0
611302905
TAIWAN-G COMP
3
0
STRESS:
ESD-CHARGE DEVICE MODEL, (1250V)
CY8C4245 (8CC44200A)
4251883
CY8C4245 (8CC44200A)
4251883
611303718
TAIWAN-G COMP
3
0
CY8C4245 (8CC44200A)
4251883
611302173
CML-RA
3
0
9
0
TAIWAN-G COMP
3
0
TAIWAN-G COMP
6
0
TAIWAN-G COMP
2
0
TAIWAN-G COMP
2
0
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8C4245 (8CC44200A)
4251883
611302905
TAIWAN-G COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (85C, 140mA)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (85C, 180mA)
CY8C4245 (8CC44200A)
4251883
611302905
STRESS: STATIC LATCH-UP (125C, 140mA)
CY8C4245 (8CC44200A)
4251883
611302905
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 123502
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611303750
TAIWAN-G
48
189
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
48
1111
0
CY8C4245 (8CC44200A)
4251883
611307128N
TAIWAN-G
48
1093
0
CY8C4245 (8CC44200A)
4251883
611308275
TAIWAN-G
48
1049
0
CY8C4245 (8CC44200A)
4251883
611308282
TAIWAN-G
48
1049
0
STRESS:
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
48
39
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
80
151
0
CY8C4245 (8CC44200A)
4251883
611302906
TAIWAN-G
500
151
0
TAIWAN-G COMP
32
0
STRESS: PRE/POST LFR PARAMETER ASSESSMENT
CY8C4245 (8CC44200A)
4251883
611303750
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
168
77
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
500
77
0
CY8C4245 (8CC44200A)
4251883
611301729
TAIIWAN-G
1000
76
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Reliability Test Data
QTP #: 152503
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C4246 (8CP480001AC)
4525559
611524557
CML-RA
500
80
0
CY8C4246 (8CP480001AC)
4525559
611524557
CML-RA
1000
80
0
CY8C4248 (8CP42488AC)
4511216
611514304
CML-RA
500
80
0
CY8C4248 (8CP42488AC)
4511216
611514304
CML-RA
1000
80
0
CY8C4248 (8CP42488AC)
4511217
611518965
CML-RA
500
80
0
CY8C4248 (8CP42488AC)
4511217
611518965
CML-RA
1000
80
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE
CY8C4246 (8CP480001AC)
4525559
611524557
CML-RA
48
1550
0
CY8C4246 (8CP480001AC)
4525559
611524557
CML-RA
168
80
0
CY8C4246 (8CP480001AC)
4525559
611524557
CML-RA
500
80
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
500
9
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
750
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
1100
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
2200
8
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
3300
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
4000
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
5000
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
6000
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
7000
3
0
CY8C4246 (8F480000AC)
4525559
611524701
CML-RA
8000
3
0
TAIIWAN-G COMP
6
0
TAIIWAN-G COMP
3
0
TAIIWAN-G COMP
3
0
TAIIWAN-G COMP
3
0
STRESS: STATIC LATCH-UP (+/-140mA 85C)
CY8C4245 (8CC44200A)
4251883
611301729
STRESS: STATIC LATCH-UP (+/-200mA 85C)
CY8C4245 (8CC44200A)
4251883
611301729
STRESS: STATIC LATCH-UP (+/-140mA 125C)
CY8C4245 (8CC44200A)
4251883
611301729
STRESS: STATIC LATCH-UP (+/-300mA 85C)
CY8C4245 (8CC44200A)
4251883
611301729
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 18 of 19
Document No. 002-10630 Rev. **
ECN #: 5074150
Document History Page
Document Title:
Document Number:
QTP#152503: PSoC4A-DS2 Device Family S8SPF-10R Technology, Fab 4 CMI
002-10630
Rev. ECN
Orig. of
No.
Change
**
5074150
HSTO
Description of Change
Initial spec release
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 19 of 19