Document No. 001-78239 Rev. *A ECN #: 4344495 Cypress Semiconductor Product Qualification Report QTP # 112111 VERSION*A April, 2014 1.5GHz High Performance Buffer Device Derivative S8TMA-5P, Fab 4 CMI CY2DL15110 1:10 Differential LVDS Fanout Buffer With Selectable Clock Input FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 PRODUCT QUALIFICATION HISTORY QTP Number 083401 095107 112111 Description of Qualification Purpose Qualify SONOS S8DI-5R Technology in Fab 4 Qualify 1.5GHz High Performance Buffer (7C85500/10/30/40) device on S8TMA-5P Technology in Fab 4 CMI Qualify 1.5GHz High Performance Buffer, 7C85550 on S8TMA-5R, Derivative Device Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Date Jan 09 Jan 11 Feb 12 Document No. 001-78239 Rev. *A ECN #: 4344495 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of 1.5GHz High Performance Buffer 7C85550, derivative device on S8TMA-5P Technology in Fab 4 CMI Marketing Part #: CY2DL15110 Device Description: 2.5V & 3.3V Industrial in 32-TQFP Package Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: Metal 1: 100A Ti/3200Al-0.5%Cu/300A TiW Metal 2: 100A Ti/ 3200Al-0.5%Cu/350ATiW Metal 3: 500A TiW/ 21,250A Al- 0.5%Cu/300A TiW 7000A +/-2000A Nitride 3 Metal Composition: Passivation Type and Thickness: Generic Process Technology/Design Rule (µ-drawn): S8 / 0.13u Gate Oxide Material/Thickness (MOS): SiO2 / 40A & SiO2 / 110A Name/Location of Die Fab (prime) Facility: Fab 4, CMI-Minnesota Die Fab Line ID/Wafer Process ID: S8TMA-5P PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 32-Lead TQFP Amkor Korea – Q (K3) Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: AZ32 Package Outline, Type, or Name: 32-Lead Thin Quad Flatpack (TQFP) Mold Compound Name/Manufacturer: G700L / Sumitomo Mold Compound Flammability Rating: V-O per UL94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 3230 Die Attach Method: Epoxy Bond Diagram Designation: 001-69724 Wire Bond Method: Thermosonic Wire Material/Size: Au / 1.0 mil Thermal Resistance Theta JA °C/W: 69 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-04159 Name/Location of Assembly (prime) facility: Q – Amkor K3 (Korea) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate Test Condition (Temp/Bias) Result P/F Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Dynamic Operating Condition, Vcc Max=2.1V/2.53V, 150°C JESD22-A108 Dynamic Operating Condition, Vcc Max=5V, 125°C /150°C Dynamic Operating Condition, Vcc Max=3.96V, 125°C JESD22-A108 Dynamic Operating Condition, Vcc Max=2.1V/2.53V, 150°C JESD22-A108 Static Operating Condition, Vcc Max=2.1V,150°C/3.63V, 125°C JESD22-A108 Dynamic Operating Condition, Vcc Max= -30°C, 2.1V JESD22-A108 JEDEC STD 22-A110:130°C, 85%RH, 5.25V, Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) MIL-STD-883, Method 1010, Condition C, -65 °C to 150 °C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) JESD22-A102, 121 °C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 °C, 60% RH, 260°C Reflow) 200C, 4hrs MIL-STD-883, Method 883-2011 Criteria: Meet external and internal characteristics of Cypress package 150 C, non-biased JESD22-A117 and JESD22-A103 150C, 8.5V JESD 78 2,200V JEDEC EIA/JESD22-A114 500V JESD22-C101 Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 85C, ± 200mA, 125C, +140mA JESD 78 P SEM Cross Section MIL-STD-883, Method 2018 P High Temperature Operating Life Early Failure Rate (Regulator On) High Temperature Operating Life Latent Failure Rate High Temperature Steady State life Low Temperature Operating Life High Accelerated Saturation Test (HAST) Temperature Cycle Pressure Cooker Acoustic Microscopy Age Bond Strength Constructional Analysis Data Retention Dynamic Latch-up Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P P P P P P P P P P P P P P P Document No. 001-78239 Rev. *A ECN #: 4344495 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,532 Devices 0 N/A N/A 0 PPM 646, 000 DHRs 0 0.7 170 8 FIT 1,2 High Temperature Operating Life Long Term Failure Rate 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY8C20566 (8C20566AC) 4827949 610844164 CML-R COMP 3 0 CY8C20466 (8C20466AC) 4804681 610822808 Malaysia-CA COMP 3 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 78 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 500 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 1000 78 0 CY8C20566 (8C20566AC) 4810486 610830786 CML-R 168 77 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 168 77 0 CY8C20566 (8C20566AC) 4827949 610844164 CML-R 168 79 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 168 76 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 500 9 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 9 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A COMP 1 0 STRESS: SEM CROSS SECTION CY8C20066 (8C20066AC) 4810486 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP (85C, 8.25V) CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 6 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 6 0 CY8C20666 (8C20666AC) 4837410 410.23.02 Promex 6 0 COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 2200 8 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 2200 8 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C20566 (8C20566AC) 4827949 610844164 CML-R 48 1002 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 48 1008 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 48 1004 1 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 48 45 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 48 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 96 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 500 390 0 (1) Destroyed during failure analysis Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 80 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8C20566 (8C20566AC) 4815537 610835437 CML-R 500 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 500 77 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 256 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 333 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 288 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 095107 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY2DP1510AX 4035631 611049586/88/90 L-KOREA COMP 9 0 CY2DL1510AZ 4035631 611051554 L-KOREA COMP 9 0 CY2CP1504ZX 4035631 611052307 T-TAIWAN COMP 9 0 STRESS: STATIC LATCH-UP (125C, 5.19V, +/-140mA) CY2DP1510AX 4035631 611049586/88/90 L-KOREA COMP 6 0 CY2DL1510AZ 4035631 611051554 L-KOREA COMP 6 0 CY2CP1504ZX 4035631 611052307 T-TAIWAN COMP 6 0 CY2DL1504ZX 4035631 611052935 T-TAIWAN COMP 6 0 CY2DM1502ZX 4035631 611052755 M-PHIL COMP 6 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY2DP1510AX 4035631 611049586/88/90 L-KOREA COMP 8 0 CY2DL1510AZ 4035631 611051554 L-KOREA COMP 8 0 CY2CP1504ZX 4035631 611052307 T-TAIWAN COMP 8 0 CY2DL1504ZX 4035631 611052935 T-TAIWAN COMP 8 0 CY2DM1502ZX 4035631 611052755 M-PHIL COMP 8 0 COMP 30 0 STRESS: ELECTRICAL PARAMETER ASSESSMENT CY2DP1510AX 4035601 611049587/89/91 L-KOREA STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.53V, Vcc Max) CY2DP1510AX 4035601 611049587/89/91 L-KOREA 48 1532 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125, 3.96V, Vcc Max) CY2DP1510AX 4035631 611049586/88/90 L-KOREA 96 51 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.53V, Vcc Max) CY2DP1510AX 4035601 611049587/89/91 L-KOREA 80 122 0 CY2DP1510AX 4035601 611049587/89/91 L-KOREA 500 122 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 3.63V) CY2DP1510AX 4035601 611049587/89/91 L-KOREA 168 80 0 CY2DP1510AX 4035601 611049587/89/91 L-KOREA 336 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY2DP1510AX 4035631 611049586/88/90 L-KOREA 168 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 095107 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY2DP1510AX 4035631 611049586/88/90 L-KOREA 500 80 0 CY2DP1510AX 4035631 611049586/88/90 L-KOREA 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Reliability Test Data QTP #: 112111 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP (125C, 5.19V, +/-140mA) CY2DL15110AZI 4125758 611155101 Q-KOREA COMP 6 0 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY2DL15110AZI 4125758 611155101 Q-KOREA COMP 611155101 Q-KOREA COMP COMPARABLE 611155101 Q-KOREA COMP COMPARABLE STRESS: E-TEST YIELD CY2DL15110AZI 4125758 STRESS: SORT YIELD CY2DL15110AZI 4125758 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No. 001-78239 Rev. *A ECN #: 4344495 Document History Page Document Title: QTP 112111: 1.5GHZ HIGH PERFORMANCE BUFFER DEVICE DERIVATIVE (CY2DL15110), S8TMA-5P, FAB 4 CMI 001-78239 Document Number: Rev. ECN No. ** 3570812 *A 4344495 Orig. of Change NSR JYF Description of Change Initial Spec Release Sunset review: Updated QTP title page and device division from MID to MPD; Updated Reliability Tests Performed table: - Deleted specs 25-00104, 25-20035, 22-00029, 25-00020 and 01-00081 and replaced with industry standards; - Deleted current density - Added industry standard of HTOL, HTSSL, LTOL, PCT, HAST - Updated industry standard of Endurance Test Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13