PHILIPS TFA9800J

TFA9800J
2 × 7 W stereo power amplifier
Rev. 01 — 17 March 2006
Preliminary data sheet
1. General description
The TFA9800 is an integrated class-AB dual output amplifier in a 9-pin DIL-bent-SIL
(DBS9P) power package. The device is primarily developed for CRT and multi-media
applications.
2. Features
■
■
■
■
■
■
■
■
■
■
Requires very few external components
High output power
Fixed gain
Good ripple rejection
Mute/standby switch
AC and DC short-circuit safe to ground and VP
Thermally protected
Capability to handle high energy on outputs (VP = 0 V)
No switch-on/switch-off plop
Electrostatic discharge protection
3. Quick reference data
Table 1:
Quick reference data
Symbol Parameter
VP
supply voltage
Conditions
Min
Typ
Max
Unit
operating
[1]
6.0
15.0
18.0
V
no output signal
[1]
-
-
20.0
V
IORM
repetitive peak output
current
-
-
2.5
A
Iq(tot)
total quiescent current
-
40
80
mA
Istb
standby current
-
-
100
µA
|Zi|
input impedance
50
60
75
kΩ
Po
output power
RL = 4 Ω; THD = 0.5 %
[2]
4.5
5.5
-
W
RL = 4 Ω; THD = 10 %
[2]
6.0
7.0
-
W
SVRR
supply voltage rejection ratio on; fi = 100 Hz to 10 kHz
48
-
-
dB
αcs
channel separation
40
-
-
dB
RS = 10 kΩ
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
Table 1:
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gv
closed loop
19
20
21
dB
on; RS = 0 Ω;
fi = 20 Hz to 20 kHz
-
50
-
µV
-
-
150
°C
voltage gain
Vn(o)(rms) noise output voltage (RMS
value)
junction temperature
Tj
[1]
The circuit is DC adjusted at VP = 6 V to 18 V and AC operating at VP = 8.5 V to 18 V.
[2]
Output power is measured directly at the output pins of the TFA9800J.
4. Ordering information
Table 2:
Ordering information
Type number
TFA9800J
Package
Name
Description
DBS9P
plastic DIL-bent-SIL power package; 9 leads (lead SOT523-1
length 12/11 mm); exposed die pad
TFA9800J_1
Preliminary data sheet
Version
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
2 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
5. Block diagram
non-inverting
input 1
1
Cm
mute switch
60
kΩ
4
VA
output 1
2
kΩ
power stage
18 kΩ
VP
8
stand-by
switch
mute/stand-by
switch input
stand-by
reference
voltage
VA
15
kΩ
×1
supply voltage
ripple rejection
output
mute
switch
3
15
kΩ
mute
reference
voltage
TFA9800J
18 kΩ
2
kΩ
non-inverting
input 2
6
VA
9
60
kΩ
power stage
mute switch
input
reference
voltage
signal
ground
7
2
SGND
output 2
Cm
VP
power
ground
5 (substrate)
PGND
001aad578
Fig 1. Block diagram
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
3 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
6. Pinning information
6.1 Pinning
−INV1
1
SGND
2
SVRR
3
OUT1
4
PGND
5
OUT2
6
VP
7
M/SS
8
−INV2
9
TFA9800J
001aad579
Fig 2. Pin configuration SOT523-1
6.2 Pin description
Table 3:
Pin description
Symbol
Pin
Description
−INV1
1
non-inverting input 1
SGND
2
signal ground
SVRR
3
supply voltage ripple rejection output
OUT1
4
output 1
PGND
5
power ground
OUT2
6
output 2
VP
7
supply voltage
M/SS
8
mute/standby switch input
−INV2
9
non-inverting input 2
7. Functional description
The TFA9800J contains two identical amplifiers with differential input stages. The gain of
each amplifier is fixed at 20 dB. A special feature of the device is the mute/standby switch
which has the following features:
• Low standby current (< 100 µA)
• Low mute/standby switching current (low cost supply switch)
• Mute condition
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
4 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
8. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
supply voltage
VP
Min
Max
Unit
operating
[1]
6.0
15.0
18.0
no output signal
[1]
-
-
20.0
VP(sc)
short-circuit supply voltage
-
18
V
VP(r)
reverse supply voltage
-
6
V
Ehand(O)
energy handling capacity at
outputs
-
200
mJ
IOSM
non-repetitive peak output
current
-
4
A
IORM
repetitive peak output current
-
2.5
A
Ptot
total power dissipation
-
25
W
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−40
+85
°C
Tj
junction temperature
-
150
°C
[1]
VP = 0 V
The circuit is DC adjusted at VP = 6 V to 18 V and AC operating at VP = 8.5 V to 18 V.
9. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Rth( j-c)
Rth( j-a)
Conditions
Typ
Unit
thermal resistance from junction to case
4
K/W
thermal resistance from junction to ambient in free air
40
K/W
10. Static characteristics
Table 6:
Symbol
Static characteristics
Parameter
Conditions
Min
Typ
Max
Unit
6.0
15
18.0
V
Supply
[1]
VP
supply voltage
Iq(tot)
total quiescent
current
-
40
80
mA
Istb
standby current
-
-
100
µA
VO
output voltage
-
7.2
-
V
-
12
40
µA
Mute/standby switch
II(sw)
switch input current
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
5 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
Table 6:
Static characteristics …continued
Symbol
Parameter
Min
Typ
Max
Unit
Vth(on)
on threshold voltage
8.5
-
-
V
Vth(mute)
mute threshold
voltage
3.3
-
6.4
V
Vth(stb)
standby threshold
voltage
0
-
2
V
[1]
Conditions
The circuit is DC adjusted at VP = 6 V to 18 V and AC operating at VP = 8.5 V to 18 V.
11. Dynamic characteristics
Table 7:
Dynamic characteristics
VP = 15 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measured in Figure 3; unless otherwise specified.
Symbol
Po
Parameter
Conditions
output power
RL = 4 Ω; THD = 0.5 %
[1]
RL = 4 Ω; THD = 10 %
[1]
THD
total harmonic
distortion
f-3db(l)
low frequency −3 dB
point
f-1db(h)
high frequency
−1 dB point
Gv
voltage gain
|∆Gv|
voltage gain
difference
SVRR
supply voltage
rejection ratio
Po = 1 W
[2]
closed loop
|Zi|
input impedance
Vn(o)(rms)
noise output voltage
(RMS value)
Typ
Max
Unit
4.5
5.5
-
W
6.0
7.0
-
W
-
0.1
-
%
-
45
-
Hz
20
-
-
kHz
19
20
21
dB
-
0.1
1
dB
fi = 100 Hz to 10 kHz
on
[3]
48
-
-
dB
mute
[3]
48
-
-
dB
standby
[3]
80
-
-
dB
50
60
75
kΩ
fi = 20 Hz to 20 kHz
on; RS = 0 Ω
[4]
-
50
-
µV
on; RS = 10 kΩ
[4]
-
70
100
µV
mute
[5]
-
50
-
µV
VO(mute)
mute output voltage
VI(max) = 1 V;
fi = 20 Hz to 15 kHz
-
-
2
mV
αcs
channel separation
RS = 10 kΩ
40
-
-
dB
[1]
Output power is measured directly at the output pins of the IC.
[2]
Frequency response externally fixed.
[3]
Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of
2 V (p-p) and a frequency between 100 Hz and 10 kHz.
[4]
Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
[5]
Noise output voltage independent of RS (VI = 0 V).
TFA9800J_1
Preliminary data sheet
Min
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
6 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
12. Application information
12.1 Printed-Circuit Board (PCB) layout and grounding
For high system performance level, certain grounding techniques are imperative. The
input reference grounds have to be tied with their respective source grounds and must
have separate traces from the power ground traces; this will prevent the large (output)
signal currents from interfering with the small AC input signals. The small-signal ground
traces should be physically located as far as possible from the power ground traces. The
width of supply and output traces should be as large as practical for delivering maximum
output power.
Proper supply bypassing is critical for low noise performance and high power supply
rejection. The respective capacitor locations should be as close as possible to the device
and grounded to the power ground. Proper power supply decoupling also prevents
oscillations. For suppressing higher frequency transients (spikes) on the supply line a
capacitor with low Equivalent Series Resistance (ESR), typical 0.1 µF, has to be placed as
close as possible to the device. For suppressing lower frequency noise and ripple signals,
a large electrolytic capacitor, e.g. 1000 µF or greater, must be placed close to the
TFA9800J.
In a single-ended (stereo) application a bypass capacitor on the SVRR pin reduces the
noise and ripple on the mid-rail voltage. For good THD and noise performance a low ESR
capacitor is recommended.
12.2 Input configuration
It should be noted that the DC level of the input pins is about 2.1 V, therefore a coupling
capacitor is necessary.
1
1
The input cut-off frequency is: f i = ------------------ ⇒ f i = ----------------------------------------------------------------- = 24 Hz
3
–9
2πR i C i
2π × 30 × 10 × 220 × 10
This calculation shows that it is not necessary to use high capacitor values for the input;
so the delay during switch-on, which is necessary for charging the input capacitors, can
be minimized. This results in a good low frequency response and good switch-on
behavior.
For stereo application (single-ended) coupling capacitors on both input and output are
necessary.
12.3 Built-in protection circuits
The TFA9800J contains two kinds of protection circuits:
• Short-circuit of outputs to ground, supply and across the load: short-circuit is detected
and controlled by a Safe Operating ARea (SOAR) protection circuit.
• Thermal shutdown protection: the junction temperature is measured by a temperature
sensor; at a junction temperature of > 150 °C, thermal fold back is activated.
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
7 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
12.4 Output power
The output power versus supply voltage has been measured on the output pins and at
THD = 10 %. The maximum output power is limited by the maximum allowable power
dissipation and the maximum available output current: 2.5 A repetitive peak current; see
Figure 13.
12.5 Supply voltage ripple rejection
The SVRR has been measured with an electrolytic capacitor of 100 µF on pin 3 and at a
bandwidth of 10 Hz to 80 kHz. Both curves for operating and mute condition were
measured with RS = 25 Ω; see Figure 9.
12.6 Headroom
A typical music CD requires at least 12 dB (= factor 15.85) dynamic headroom compared
with the average power output for passing the loudest portions without distortion. The
following calculation can be made for this application at VP = 15 V and RL = 4 Ω:
Po at THD = 0.2 % is about 4.5 W; see Figure 7. Average Listening Level (ALL) without
any distortion yields: Po = 4.5 W / 15.85 = 284 mW. From Figure 11, the power dissipation
can be derived for a headroom of 0 dB and 12 dB respectively:
Table 8:
Power rating
Condition
Headroom
Power dissipation
Po = 4.5 W at THD = 0.2 %
0 dB
6W
12 dB
4W
So for average listening level music power, a power dissipation of 4 W can be used for the
thermal behavior calculation as described in Section 12.9 “Thermal behavior”.
12.7 Pin M/SS
For the three functional modes: Standby mode, Mute mode, and Operating mode, pin
M/SS can be driven by a 3-state logic output stage, e.g. microcontroller with some extra
components for DC-level shifting; see Figure 10 for the respective DC levels.
• Standby mode is activated by a low DC level, between 0 V and 2 V on pin M/SS. The
power consumption of the TFA9800J will be reduced to < 0.1 mW
• Mute mode will be activated by a DC level between 3.3 V and 6.4 V. The outputs of
the amplifier will be muted (no audio output), however the amplifier is DC biased and
the DC level of the output pins remains on half the supply voltage. The input coupling
capacitors are charged when in Mute mode to avoid plop noise.
• The TFA9800J will be in Operating mode at pin M/SS voltages between 8.5 V and VP
12.8 Switch on and switch off
To avoid audible plops during switch on or switch off of the supply voltage, pin M/SS has to
be set in Standby condition (GND level) before the voltage is applied (switch-on) or
removed (switch-off). Via the Mute mode the input- and SVRR-capacitors are smoothly
charged (or discharged). The slope of the SVRR-voltage should be well controlled and
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
8 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
slow. Unfortunately, the slope of the SVRR voltage is not well controlled in the phase
where the SVRR voltage is between ground and ground + 0.7 V. In other words SVRR
makes a step and so does the output. Consequently a plop sound can occur.
Solution is to give the SVRR pin a bias, see anti plop 1 in Figure 4. A second improvement
is to give the DC-outputs of the load a bias, see anti plop 2 Figure 4.
The turn-on and turn-off time can be influenced by an RC-circuit on the pin M/SS; see anti
plop 3 in Figure 4. Rapid on/off switching of the device or pin M/SS may cause click and
plop noise. A proper timing on pin M/SS can prevent this; see Figure 4.
12.9 Thermal behavior
The typical thermal resistance of the TFA9800J in the DBS9P package (Rth(j-c)) is 4 K/W.
The thermal resistance (Rth(h-a)) of an aluminium heat-sink with a (one-side) area of about
22 cm2 is about 16 K/W. For a maximum ambient temperature of 60 °C the following
calculation can be made for the application at VP = 15 V, RL = 4 Ω and the ALL music
power dissipation is about 4 W:
T j ( max ) = T amb + P tot × ( R th ( j – c ) + R th ( h – a ) ) ⇒ T j ( max ) = 60 + 4.0 × ( 4 + 16 ) = 140 °C
Remark: The calculation holds for applications at average listening level music output
signals. Applying or testing with sine wave signals will produce about 1.5 × the music
power dissipation. At worst-case condition this can activate the maximum temperature
protection.
12.10 Application diagram and board layout
The single-ended application circuit diagram is shown in Figure 3. The PCB layout for this
application is shown in Figure 5 and Figure 6.
VP
220 nF
IN1
−INV1 1
8
100
nF
7
2200
µF
4 OUT1
1000
µF
TFA9800J
3 SVRR
100
µF
Vref
4Ω
6 OUT2
220 nF
IN2
−INV2 9
SGND
PGND
2
5
1000
µF
4Ω
001aad580
Fig 3. Single-ended application block diagram
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
9 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
1 MΩ
22 kΩ
1 kΩ
VP
mute
4.7 µF
BC337
anti plop 3
M/SS
220 nF
−INV1 1
8
7
470 Ω
4 OUT1
VP
1000 µF
VP
22 kΩ
200 kΩ
BAW62
SVRR
TFA9800J
3
100 µF
200 kΩ
470 Ω
Vref
6 OUT2
47 Ω
1000 µF
BAW62
anti plop 1
220 nF
−INV2 9
SGND
2
PGND
anti plop 2
5
GND
001aad581
Fig 4. Implementation diagram for plop improvement
001aae489
a. Bottom side
001aae490
b. Component side
Fig 5. Printed-circuit board copper plane layout for single-ended application
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
10 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
TFA9800J ASYM
C14
S1
C15
C17 +
FP
26 AUG 2005
C16
IN1
+
1
7322-448-16011
X1
SVR C6
IN2
OUT2
C18
C19
+
X10
+
OUT1
X4
X3
X5
X2
+ OUT2− + OUT2− VP GND
1
2
1
2
1
2
001aae491
Fig 6. Printed-circuit board component layout for single-ended application
12.11 Typical performance characteristics for single-ended application
The test conditions, unless otherwise specified, are: Tamb = 25 °C; VP = 15 V; fi = 1 kHz;
RL = 4 Ω; single-ended stereo application; fixed gain equals 20 dB; audio band pass from
22 Hz to 22 kHz. All graphs show typical curves.
The graphs as a function of frequency use a band pass of 20 Hz to 80 kHz.
001aae492
10
VP = 9 V
12 V
15 V
18 V
THD
(%)
1
THD
(%)
1
10−1
10−2
10−2
VP = 9 V
12 V
15 V
18 V
10−1
10−1
1
10
10−2
10−2
Po (W)
10−1
1
102
10
f (kHz)
Fig 7. Total harmonic distortion as a function of
output power
Fig 8. Total harmonic distortion as a function of
frequency
TFA9800J_1
Preliminary data sheet
001aae493
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
11 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
001aae494
0
SVRR
(dB)
−20
−40
001aae495
10
Vo
(V)
1
10−1
operating
10−2
−60
−80
10−3
mute
−100
10−2
10−4
10−1
1
102
10
0
4
8
12
16
VM/SS (V)
f (kHz)
RS = 25 Ω
Fig 9. Supply voltage ripple rejection as a function of
frequency
001aae496
10
Ptot
(W)
8
RL = 4 Ω
6
Fig 10. Output voltage as a function of voltage on
pin M/SS
001aae497
10
Ptot
(W)
8
RL = 4 Ω
6
RL = 8 Ω
4
4
RL = 16 Ω
RL = 8 Ω
2
2
0
0
0
2
4
6
8
8
12
16
Po (W)
Fig 11. Total power dissipation (worst case, both
channels driven) as a function of output power
per channel
001aae498
12
20
VP (V)
Po
(W)
Fig 12. Total power dissipation (worst case, both
channels driven) as a function of supply
voltage
001aae499
0
αcs
(dB)
−20
RL = 4 Ω
8
−40
RL = 8 Ω
4
−60
RL = 16 Ω
−80
0
8
12
16
20
−100
10−2
VP (V)
10−1
1
102
10
f (kHz)
RS = 25 Ω
Fig 13. Output power (one channel) as a function of
supply voltage
Fig 14. Channel separation as a function of frequency
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
12 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
13. Package outline
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad
SOT523-1
q1
non-concave
x
Eh
Dh
D
D1
view B: mounting base side
P
A2
k
q2
B
E
q
L2
L3
L1
L
1
9
e1
Z
e
Q
w M
bp
0
5
scale
DIMENSIONS (mm are the original dimensions)
UNIT A2(2) bp
mm
c
D(1) D1(2) Dh E(1) Eh
2.7 0.80 0.58 13.2
2.3 0.65 0.48 12.8
10 mm
v M
c
e2
m
e
e1
e2
6.2
14.7
3.5 2.54 1.27 5.08
3.5
5.8
14.3
L
k
3
2
L1
L2
L3
m
12.4 11.4 6.7
11.0 10.0 5.5
4.5
3.7
2.8
P
Q
q
q1
q2
3.4 1.15 17.5
4.85 3.8
3.1 0.85 16.3
3.6
v
w
x
0.8 0.3 0.02
Z(1)
1.65
1.10
Notes
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2. Plastic surface within circle area D1 may protrude 0.04 mm maximum.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
00-07-03
03-03-12
SOT523-1
Fig 15. Package outline SOT523-1 (DBS9P)
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
13 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
14. Soldering
14.1 Introduction to soldering through-hole mount packages
This text gives a brief insight to wave, dip and manual soldering. A more in-depth account
of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of through-hole mount IC packages
on a printed-circuit board.
14.2 Soldering by dipping or by solder wave
Driven by legislation and environmental forces the worldwide use of lead-free solder
pastes is increasing. Typical dwell time of the leads in the wave ranges from
3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb
or Pb-free respectively.
The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic
body must not exceed the specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling may be necessary immediately
after soldering to keep the temperature within the permissible limit.
14.3 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the
seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is
less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is
between 300 °C and 400 °C, contact may be up to 5 seconds.
14.4 Package related soldering information
Table 9:
Suitability of through-hole mount IC packages for dipping and wave soldering
methods
Package
Soldering method
Dipping
Wave
CPGA, HCPGA
-
suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL
suitable
suitable [1]
PMFP [2]
-
not suitable
[1]
For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit
board.
[2]
For PMFP packages hot bar soldering or manual soldering is suitable.
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
14 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
15. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
TFA9800J_1
20060317
Preliminary data sheet
-
-
-
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
15 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
16. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
17. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
19. Trademarks
18. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
20. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
TFA9800J_1
Preliminary data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 17 March 2006
16 of 17
TFA9800J
Philips Semiconductors
2 × 7 W stereo power amplifier
21. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
12.1
12.2
12.3
12.4
12.5
12.6
12.7
12.8
12.9
12.10
12.11
13
14
14.1
14.2
14.3
14.4
15
16
17
18
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Application information. . . . . . . . . . . . . . . . . . . 7
Printed-Circuit Board (PCB) layout and
grounding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Input configuration . . . . . . . . . . . . . . . . . . . . . . 7
Built-in protection circuits . . . . . . . . . . . . . . . . . 7
Output power . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Supply voltage ripple rejection . . . . . . . . . . . . . 8
Headroom . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Pin M/SS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Switch on and switch off . . . . . . . . . . . . . . . . . . 8
Thermal behavior . . . . . . . . . . . . . . . . . . . . . . . 9
Application diagram and board layout. . . . . . . . 9
Typical performance characteristics for
single-ended application . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Introduction to soldering through-hole mount
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Soldering by dipping or by solder wave . . . . . 14
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 14
Package related soldering information . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information . . . . . . . . . . . . . . . . . . . . 16
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 17 March 2006
Document number: TFA9800J_1
Published in The Netherlands