DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V f MHz PL W Gp dB ηC % 12,5 175 45 > 6,5 > 55 PIN CONFIGURATION PINNING PIN handbook, halfpage 1 3 5 2 4 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter 6 MSB006 Fig.1 Simplified outlinbe, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLV45/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value vCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16,5 V Emitter-base voltage (open collector) VEBO max. 4 V d.c. or average IC max. 9 A peak value; f > 1 MHz ICM max. 27 A Ptot max. 90 W Collector current Total power dissipation at Tmb = 25 °C; f > 1 MHz Storage temperature Tstg Operating junction temperature Tj MGP347 −65 to + 150 °C 200 °C max. MGP348 160 10 handbook, halfpage handbook, halfpage IC (A) Tmb = 25 °C Ptot Th = 70 °C (W) 80 ΙΙ Ι 1 1 10 0 16.5 VCE (V) 0 102 100 200 Th (°C) I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz) Rth mb-h = 0,2 K/W. Fig.2 D.C. soar. Fig.3 Power/temperature derating curves; Rth mb-h = 0,2 K/W. THERMAL RESISTANCE Dissipation = 68 W; Tmb = 25 °C From junction to mounting base (r.f. dissipation) From mounting base to heatsink August 1986 3 Rth j−mb = 1,58 K/W Rth mb−h = 0,2 K/W Philips Semiconductors Product specification VHF power transistor BLV45/12 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage V(BR)CBO > 36 V V(BR)CEO > 16,5 V V(BR)EBO > 4 V ICES < 22 mA ESBR > 12,5 mJ hFE > typ. IE = ie = 0; VCB = 12,5 V Cc typ. 130 pF Collector-flange capacitance Ccf typ. 3 pF Cre typ. 80 pF open emitter; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain VCE = 10 V; IC = 6 A 15 55 Collector capacitance at f = 1 MHz Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V MGP349 MGP350 400 100 handbook, halfpage handbook, halfpage hFE Cc (pF) VCE = 12.5 V 10 V 50 200 0 0 10 0 Fig.4 IC (A) 0 20 D.C. current gain versus collector current; Tj = 25 °C. August 1986 Fig.5 4 10 VCB (V) 20 Output capacitance versus VCB; IE = ie = 0; f = 1 MHz; Tj = 25 °C Philips Semiconductors Product specification VHF power transistor BLV45/12 APPLICATION INFORMATION R. F. performance in c.w. operation (common-emitter circuit; class-B) f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W MODE OF OPERATION narrow band; c.w. VCE V PL W 12,5 45 ηC % Gp dB > 6,5 > 55 typ. 8,0 typ. 67 handbook, full pagewidth C2 C1 50 Ω L1 L2 C3 C4 C10 L3 L6 T.U.T. C7 L10 L8 C5 50 Ω C12 C8 C11 L7 L4 C6 L5 R1 L9 C9 +VCC MGP351 Fig.6 Class-B test circuit at f = 175 MHz. List of components: C1 = C11 = C12 = 4 to 40 pF film dielectric trimmer (cat.no. 2222 809 07008) C2 = C10 = 10 pF multilayer ceramic chip capacitor (1) C3 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C4 = C5 = 91 pF multilayer ceramic chip capacitor (1) C6 = 820 pF multilayer ceramic chip capacitor (1) C7 = C8 = 2 × 4,7 pF multilayer ceramic chip capacitors(1) in parallel C9 = 100 nF polyester capacitor L1 = strip, 28 mm × 4 mm L2 = 4 turns Cu wire (1,0 mm); int.dia. 4,0 mm; length 7,5 mm; leads 2 × 3,5 mm L3 = strip, 22 mm × 6 mm L4 = 1 turn Cu wire (0,8 mm); int.dia. 3,0 mm; leads 2 × 9 mm L5 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640) L6 = strip, 12 mm × 6 mm L7 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 × 5 mm L8 = 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2 × 3 mm L10 = strip, 18 mm × 4 mm L1, L3, L6 and L10 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 inch. R1 = 4,7 Ω ± 10%, carbon resistor Note 1. American Technical Ceramics capacitor type 100B or capacitor of same quality. August 1986 5 Philips Semiconductors Product specification VHF power transistor BLV45/12 162 handbook, full pagewidth Cu strap 70 rivets soldered copper straps ground plane removed L9 L5 R1 C6 L4 L2 L1 C1 C9 L7 C7 C4 C10 L6 L3 C2 +VCC L8 C5 C8 C3 L10 C12 C11 MGP352 Fig.7 Printed circuit board and component lay-out for 175 MHz class-B test circuit. The circuit and components are on one side of the epoxy fibre-glass board. The other side, except for the area indicated by the dotted line, is unetched copper serving as a ground plane. If the p.c.b. is in direct contact with the heatsink, the heatsink area within the dotted line has to raised al least 0,5 mm to minimize the dielectric losses. Earth connections are made by hollow rivets and additionally by fixing screws and copper straps under the emitters to provide a direct contact between the copper of the component side and the ground plane. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV45/12 MGP353 MGP354 80 12 handbook, halfpage 90 handbook, halfpage GP (dB) PL ηC 10 (W) 40 ηC (%) 50 8 GP 6 0 0 10 20 PS (W) 0 Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W 20 40 60 PL (W) 80 Typical values; VCE = 12,5 V; f = 175 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W Fig.8 Load power versus source power. Fig.9 Ruggedness in class-B operation The BLV45/12 is capable of withstanding a load mismatch (VSWR = 20 through all phases) at rated load power up to a supply voltage of 15,5 V; Th = 25 °C; Rth mb-h = 0,2 K/W. Power slump If Th is increased from 25 °C to 70 °C the output power slump for constant PS amounts to typ. 7 % (VCE = 12,5 V; f = 175 MHz; Rth mb-h = 0,2 K/W). August 1986 10 4 30 7 Power gain and efficiency versus load power. Philips Semiconductors Product specification VHF power transistor BLV45/12 MGP355 MGP356 3 3 handbook, halfpage handbook, halfpage ri, xi RL, XL (Ω) (Ω) 2 RL 2 ri 1 1 xi 0 0 XL −1 50 100 150 f (MHz) −1 200 50 100 150 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W. Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W. Fig.10 Input impedance (series components). Fig.11 Load impedance (series components). MGP357 20 handbook, halfpage GP (dB) 10 0 50 100 150 f (MHz) 200 Typical values; VCE = 12,5 V; PL = 45 W; f = 50 to 200 MHz; Rth mb-h = 0,2 K/W. Fig.12 Power gain versus frequency. August 1986 8 Philips Semiconductors Product specification VHF power transistor BLV45/12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A August 1986 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 9 Philips Semiconductors Product specification VHF power transistor BLV45/12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 10