DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain QUICK REFERENCE DATA Envelope SOT-119 Mode of operation class-B; c.w. Collector-emitter voltage (d.c.) VCE 12,5 V Frequency f 470 MHz Load power PL Power gain GP > 6,0 dB Collector efficiency ηC > 55 % Heatsink temperature Th PIN CONFIGURATION 30 W 25 °C PINNING PIN handbook, halfpage 1 2 3 4 5 6 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. January 1985 2 Philips Semiconductors Product specification UHF power transistor BLU30/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value VCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16,5 V Emitter-base voltage (open collector) VEBO max. 4 V d.c. or average IC max. 6 A (peak value); f > 1 MHz ICM max. 18 A Ptot (r.f.) max. 65 W Collector current Total power dissipation f > 1 MHz; Tmb = 25 °C Storage temperature Tstg Operating junction temperature Tj MDA324 10 200 °C max. MDA325 100 Ptot handbook, halfpage handbook, halfpage (W) 80 Tmb = 25 °C IC (A) −65 to + 150 °C Th = 70 °C 60 II 1 40 I 20 10−1 1 10 VCE (V) 0 102 0 40 80 120 Th (°C) 160 I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz. Fig.2 D.C. SOAR. Rth mb-h = 0,2 K/W Fig.3 Power/temperature derating curves THERMAL RESISTANCE (dissipation = 45 W; Tmb = 25 °C) From junction to mounting base (r.f. dissipation) From mounting base to heatsink January 1985 3 Rth j-mb(r.f.) max. 2,45 K/W Rth mb-h max. 0,2 K/W Philips Semiconductors Product specification UHF power transistor BLU30/12 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage IC = 50 mA; open emitter V(BR)CBO > 36 V V(BR)CEO > 16,5 V V(BR)EBO > 4 V ICES < 22 mA ESBR > 8 mJ Collector-emitter breakdown voltage IC = 100 mA; open base Emitter-base breakdown voltage IE = 10 mA; open collector Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 4 A; VCE = 10 V > 15 typ. 60 Cc typ. 85 pF Cre typ. 52 pF Ccf typ. 3 pF hFE Collector capacitance at f = 1 MHz(1) IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz(1) IC = 0; VCE = 12,5 V Collector-flange capacitance Note 1. Device mounted in SOT-119 envelope without inputmatching. MDA326 80 VCE = 12.5 V 250 Cc 10 V (pF) 210 handbook, halfpage hFE MDA327 handbook, halfpage 60 170 40 130 20 90 0 0 4 8 12 IC (A) 50 16 0 Fig.4 Tj = 25 °C; typ. values. January 1985 4 8 12 16 20 VCB (V) Fig.5 IE = ie = 0; f = 1 MHz; typ. values. 4 Philips Semiconductors Product specification UHF power transistor BLU30/12 APPLICATION INFORMATION Mode of operation In narrow-band test circuit; class-B; c.w. Collector-emitter voltage (d.c.) VCE 12,5 V Frequency f 470 MHz Load power PL Power gain Gp Collector efficiency ηC Heatsink temperature Th handbook, full pagewidth C1 ,, ,, L1 50 Ω C2 C3 ,, 30 W L4 6,0 dB typ. 7,4 dB > 55 % typ. 66 % 25 °C L6 T.U.T. > C8 50 Ω C6 C7 L2 C4 R2 R1 C5 L3 L5 MDA328 +VCC Fig.6 Class-B test circuit at f = 470 MHz. List of components: C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = C6 = 3,9 pF ceramic capacitor (500 V) C4 = 100 pF feed-through capacitor C5 = 100 nF polyester film capacitor L1 = stripline (24,0 mm × 6,7 mm) L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170) L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2 × 5 mm L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = stripline (28,4 mm × 6,7 mm) R1 = R2 = 10 Ω carbon resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74); thickness 1⁄16 inch. Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8. January 1985 5 Philips Semiconductors Product specification UHF power transistor BLU30/12 104 mm handbook, full pagewidth 01565 MJK UHF PWR AMP 56.5 mm (1) (1) (1) (1) Fig.7 P.c. board for 470 MHz, class-B test circuit. 01565 MJK UHF PWR AMP +VCC L5 R1 L3 C4 R2 C1 L2 C5 C8 L4 C6 C3 L1 L6 C2 C7 MDA329 (1) double Cu-clad printed-circuit board Cu strap (thick 0.3 mm; wide 5.0 mm) The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side fully metallized serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitter to provide a direct contact between the copper on the component side and the ground plane. Fig.8 Component lay-out of 470 MHz, class-B test circuit. January 1985 6 Philips Semiconductors Product specification UHF power transistor BLU30/12 MDA330 50 PL MDA331 10 Gp 150 ηC handbook, halfpage handbook, halfpage Th = 25 °C (W) 40 (%) (dB) 8 125 70 °C Gp 30 6 100 20 4 75 10 2 0 0 4 0 8 12 16 10 20 30 40 50 PL (W) Th = 25 °C; − − − Th = 70 °C. VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values. VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values. Load power vs. source power. Fig.10 Power and gain and efficiency vs. load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 38 W under the following conditions: VCE = 15,5 V; f = 470 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W. January 1985 25 0 20 PS (W) Fig.9 50 ηC 7 Philips Semiconductors Product specification UHF power transistor BLU30/12 MDA332 3 handbook, halfpage ZL (Ω) xi Zi MDA333 3 handbook, halfpage RL 2 (Ω) 1 2 ri 0 −1 1 −2 0 400 430 460 490 f (MHz) −3 400 520 VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. MDA334 (dB) 8 6 4 2 430 460 490 f (MHz) 520 VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. Fig.13 Power gain versus frequency. January 1985 460 490 f (MHz) 520 Fig.12 Load impedance (series components). handbook, halfpage 0 400 430 VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. Fig.11 Input impedance (series components). 10 Gp XL 8 Philips Semiconductors Product specification UHF power transistor BLU30/12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A January 1985 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 9 Philips Semiconductors Product specification UHF power transistor BLU30/12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1985 10