BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted ) RATING SYMBOL VALUE UNIT Collector-emitter voltage (VBE = 0) VCES 700 V Collector-base voltage (IE = 0) VCBO 700 V Collector-emitter voltage (IB = 0) V CEO 400 V Emitter-base voltage VEBO 9 V A IC 4 Peak collector current (see Note 1) ICM 8 A Peak collector current (see Note 2) ICM 14 A A Continuous collector current IB 2.5 Peak base current (see Note 2) IBM 3.5 A Continuous device dissipation at (or below) 25°C case temperature Ptot 75 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous base current Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUL791 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO V BE(sat) VCE(sat) hFE VFCB Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH Collector-emitter VCE = 700 V VBE = 0 cut-off current VCE = 700 V VBE = 0 VEB = IC = 0 Emitter cut-off current 9V MIN (see Note 3) TYP 400 10 TC = 90°C 200 1 IB = 400 mA IC = 2A (see Notes 4 and 5) 0.94 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.86 Collector-emitter IB = 400 mA IC = 2A (see Notes 4 and 5) 0.25 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.3 transfer ratio Collector-base forward bias diode voltage 1 0.4 µA mA V V 16.5 VCE = 1V IC = 10 mA 10 VCE = 1V IC = 2A 6 12 22 VCE = 5V IC = 8A 2 6.5 14 ICB = 60 mA UNIT V Base-emitter Forward current MAX 850 mV NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics MAX UNIT R θJA Junction to free air thermal resistance PARAMETER MIN TYP 62.5 °C/W R θJC Junction to case thermal resistance 1.66 °C/W MAX UNIT 2.2 3 µs 95 180 ns 210 300 ns inductive-load switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN tsv Storage time tfi Current fall time txo Cross over time tsv Storage time IC = 2 A IB(on) = 400 mA VCC = 40 V tfi Current fall time L = 1 mH IB(off) = 250 mA VCLAMP = 300 V IC = 2 A IB(on) = 400 mA VCC = 40 V L = 1 mH IB(off) = 800 mA VCLAMP = 300 V TYP 4 6 µs 120 230 ns resistive-load switching characteristics at 25°C case temperature TYP MAX UNIT tsv PARAMETER Storage time IC = 2 A IB(on) = 400 mA TEST CONDITIONS MIN 2.2 3 µs tfi Current fall time VCC = 300 V IB(off) = 400 mA 160 250 ns 2 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUL791 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT L791CHF VCE(sat) - Collector-Emitter Saturation Voltage - V 30 TC = 25°C hFE - Forward Current Transfer Ratio COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VCE = 1 V V CE = 5 V 1·0 0·01 0·1 1·0 10 L791CVB 10 IB = I C / 5 TC = 25°C TC = 90°C 1·0 0·1 0·01 0·1 20 1·0 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT tsv txo tfi IB(on) = IC / 5 IB(off) = IC / 2.5 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C 0·1 L791CI3 10 Inductive Switching Time - µs Inductive Switching Time - µs 1·0 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE L791CI1 10 10 IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A 1·0 0·1 t sv t fi 0·01 0·1 0·01 1·0 IC - Collector Current - A Figure 3. 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 4. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUL791 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT L791CI2 10 L791CI4 10 IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A tsv tfi IB(on) = IC / 5 IB(off) = IC / 8 VCC = 40 V VCLAMP = 300 V L = 1 mH = 25°C TC Inductive Switching Time - µs Inductive Switching Time - µs INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 1·0 t sv t fi 0·1 0·1 0·1 1·0 10 0 20 IC - Collector Current - A L791CR1 IB(on) = 400 mA, VCC = 300 V IB(off) = 400 mA, IC = 2 A = IC / 5, VCC = 300 V = IC / 5, TC = 25°C Resistive Switching Time - µs Resistive Switching Time - µs L791CR2 10 1·0 tsv tfi t sv t fi 0·1 1·0 IC - Collector Current - A Figure 7. 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 8. 4 100 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 0·1 0·1 80 Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT IB(on) IB(off) 60 TC - Case Temperature - °C Figure 5. 10 40 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUL791 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 MAXIMUM REVERSE-BIAS SAFE OPERATING AREA L791CFB L791CRB 10 IB(on) = IC / 5 VBE(off) = -5 V TC = 25°C IC - Collector Current - A IC - Collector Current - A 8 1·0 0·1 TC = 25°C tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 6 4 2 0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V Figure 10. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 BUL791 NPN SILICON POWER TRANSISTOR MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 0,64 0,41 2,90 2,40 5,28 4,88 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.