BOURNS BD648

BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
●
62.5 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
BD646
-80
BD648
-100
BD650
V CBO
-140
BD646
-60
BD648
BD650
VCEO
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
UNIT
V
-120
BD652
-80
V
-100
-120
BD652
Emitter-base voltage
VALUE
VEBO
-5
IC
-8
V
A
ICM
-12
A
IB
-0.3
A
Ptot
62.5
W
Ptot
2
W
½LIC2
50
mJ
°C
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BD646
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Collector-emitter
MAX
BD648
-80
BD650
-100
BD652
-120
IC = -30 mA
IB = 0
VCE = -30 V
IB = 0
BD646
-0.5
Collector-emitter
VCE = -40 V
IB = 0
BD648
-0.5
cut-off current
VCE = -50 V
IB = 0
BD650
-0.5
breakdown voltage
(see Note 5)
TYP
V
VCE = -60 V
IB = 0
BD652
-0.5
VCB = -60 V
IE = 0
BD646
-0.2
VCB = -80 V
IE = 0
BD648
-0.2
VCB = -100 V
IE = 0
BD650
-0.2
Collector cut-off
VCB = -120 V
IE = 0
BD652
-0.2
current
VCB = -40 V
IE = 0
TC = 150°C
BD646
-2.0
VCB = -50 V
IE = 0
TC = 150°C
BD648
-2.0
VCB = -60 V
IE = 0
TC = 150°C
BD650
-2.0
VCB = -70 V
IE = 0
TC = 150°C
BD652
-2.0
VEB =
-5 V
IC = 0
(see Notes 5 and 6)
VCE =
-3 V
IC =
-3 A
Emitter cut-off
current
Forward current
transfer ratio
(see Notes 5 and 6)
UNIT
-60
-5
mA
mA
mA
750
-2
Collector-emitter
IB =
-12 mA
IC =
-3 A
saturation voltage
IB =
-50 mA
IC =
-5 A
IB =
-50 mA
IC =
-5 A
(see Notes 5 and 6)
-3
V
IC =
-3 A
(see Notes 5 and 6)
-2.5
V
Base-emitter
saturation voltage
Base-emitter
voltage
VCE =
-3 V
(see Notes 5 and 6)
-2.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
2.0
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AD
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
-1·0
-10
TCS135AB
-2·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
-1·5
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-0·5
-0·5
IC - Collector Current - A
-1·0
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS135AC
-1·0
-0·1
BD646
BD648
BD650
BD652
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5