BOURNS BU426A

BU426, BU426A
NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
SYMBOL
BU426
BU426A
BU426
BU426A
BU426
BU426A
V CBO
VCES
VCEO
VALUE
800
900
800
900
375
400
UNIT
V
V
V
IC
6
A
ICM
10
A
A
IB
+2, -0.1
Peak base current (see Note 1)
IBM
±3
A
Continuous device dissipation at (or below) 50°C case temperature
Ptot
70
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous base current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BU426, BU426A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC = 100 mA
L = 25 mH
MIN
(see Note 2)
BU426
375
BU426A
400
TYP
MAX
V
VCE = 800 V
VBE = 0
BU426
1
Collector-emitter
VCE = 900 V
VBE = 0
BU426A
1
cut-off current
VCE = 800 V
VBE = 0
TC = 125°C
BU426
2
VCE = 900 V
VBE = 0
TC = 125°C
BU426A
2
VEB =
10 V
IC = 0
VCE =
5V
IC = 0.6 A
IC = 2.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
IB =
0.5 A
saturation voltage
IB =
1.25 A
Base-emitter
IB =
0.5 A
saturation voltage
IB =
1.25 A
IC =
10
4A
IC = 2.5 A
IC =
4A
(see Notes 3 and 4)
UNIT
30
mA
mA
60
1.5
(see Notes 3 and 4)
3
1.4
(see Notes 3 and 4)
1.6
V
V
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.1
°C/W
resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
ton
Turn on time
ts
Storage time
tf
Fall time
tf
†
Fall time
TEST CONDITIONS
†
IC = 2.5 A
IB(on) = 0.5 A
VCC = 250 V
(see Figures 1 and 2)
IC = 2.5 A
IB(on) = 0.5 A
VCC = 250 V
TC = 95°C
MIN
IB(off) = -1 A
MAX
0.3
0.6
µs
2
3.5
µs
0.15
IB(off) = -1 A
0.2
UNIT
µs
0.75
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU426, BU426A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc = 250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
C
90%
90%
E
IC
A - B = td
B - C = tr
B
E - F = tf
10%
10%
F
0%
D - E = ts
A - C = ton
D - F = t off
90%
D
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BU426, BU426A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP741AF
100
hFE - Typical DC Current Gain
VCE = 1.5 V
VCE = 5 V
10
1·0
0·1
TCP741AG
7
TC = 25°C
6
IC =
IC =
IC =
IC =
5
4
2
1
0
1·0
10
0
0·5
1·0
1·5
2·0
IB - Base Current - A
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP741AH
7
TC = 100°C
6
IC =
IC =
IC =
IC =
5
4
4
3
2
1
A
A
A
A
3
2
1
0
TCP741AI
1·2
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
A
A
A
A
3
IC - Collector Current - A
TC = 25°C
1·1
1·0
0·9
0·8
IC =
IC =
IC =
IC =
0·7
4
3
2
1
A
A
A
A
0·6
0
0·5
1·0
IB - Base Current - A
Figure 5.
1·5
2·0
0
0·2
0·4
0·6
0·8
1·0
1·2
1·4
1·6
IB - Base Current - A
Figure 6.
4
4
3
2
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU426, BU426A
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP741AA
10
1·0
0.1
tp =
0.2 µs
tp =
0.5 µs
tp =
1 µs
tp =
2 µs
tp =
6 µs
20 µs
tp =
DC Operation
0·01
1·0
BU426
BU426A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 7.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BU426, BU426A
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
15,2
14,7
ø 4,1
4,0
1,37
1,17
3,95
4,15
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAW
NOTE A: The centre pin is in electrical contact with the mounting tab.
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.