Si5504DC Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel -30 ID (A) 0.085 @ VGS = 10 V "3.9 0.143 @ VGS = 4.5 V "3.0 0.165 @ VGS = -10 V "2.8 0.290 @ VGS = -4.5 V "2.1 30 P-Channel rDS(on) (W) D1 1206-8 ChipFET S2 1 S1 D1 G2 G1 D1 G1 S2 D2 G2 Marking Code D2 EA XX Lot Traceability and Date Code S1 D2 N-Channel MOSFET P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5504DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current ID 5 secs IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD 5 secs 30 Steady State Unit -30 V "20 "3.9 "2.9 "2.8 "2.1 "2.8 "2.1 "2.0 "1.5 A "10 IDM Continuous Source Current (Diode Conduction)a P-Channel Steady State 1.8 0.9 -1.8 -0.9 2.1 1.1 2.1 1.1 1.1 0.6 1.1 0.6 TJ, Tstg W -55 to 150 Soldering Recommendations (Peak Temperature)b, c _ _C 260 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 30 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71056 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5504DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = -250 mA P-Ch -1.0 VDS = 0 V, VGS = "20 " V V N-Ch "100 P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = -24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 85_C N-Ch 5 VDS = -24 V, VGS = 0 V, TJ = 85_C P-Ch VDS w 5 V, VGS = 10 V N-Ch 10 VDS p -5 V, VGS = -10 V P-Ch -10 nA m mA -5 A VGS = 10 V, ID = 2.9 A N-Ch 0.072 0.085 VGS = -10 V, ID = -2.1 A P-Ch 0.137 0.165 VGS = 4.5 V, ID = 2.2 A N-Ch 0.120 0.143 VGS = -4.5 V, ID = -1.6 A P-Ch 0.240 0.290 VDS = 15 V, ID = 2.9 A N-Ch 6 VDS = -15 V, ID = -2.1 A P-Ch 3 IS = 0.9 A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.9 A, VGS = 0 V P-Ch -0.8 -1.2 N-Ch 5 7.5 6.6 W S V Dynamicb Total Gate Charge Qg P-Ch 5.5 N-Ch 0.8 P-Ch 1.2 N-Ch 1.0 P-Ch 0.9 N-Ch 7 11 P-Ch 8 12 N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 12 18 P-Ch 11 18 P-Channel VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W N-Ch 12 18 P-Ch 14 21 N-Ch 7 11 P-Ch 8 12 IF = 0.9 A, di/dt = 100 A/ms N-Ch 40 80 IF = -0.9 A, di/dt = 100 A/ms P-Ch 40 80 N-Channel VDS = 15 V, VGS = 10 V, ID = 2.9 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC P-Channel VDS = -15 V, VGS = -10 V, ID = -2.1 A ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71056 S-21251—Rev. B, 05-Aug-02 Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 10 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 4V 6 4 3V 2 6 4 TC = -125_C 2 25_C -55 _C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 5 Capacitance 0.20 400 0.15 300 Ciss C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current VGS = 4.5 V 0.10 VGS = 10 V 200 0.05 100 0.00 0 0 2 4 6 8 10 Coss Crss 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 1.8 1.6 VDS = 15 V ID = 2.9 A 8 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 3 6 4 2 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 71056 S-21251—Rev. B, 05-Aug-02 4 5 VGS = 10 V ID = 2.9 A 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C 0.15 ID = 2.9 A 0.10 0.05 TJ = 25_C 0.00 1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 50 ID = 250 mA 0.2 40 -0.0 30 Power (W) V GS(th) Variance (V) 6 -0.2 20 -0.4 10 -0.6 -0.8 -50 -25 0 25 50 75 100 125 0 10- 4 150 10- 3 10- 2 TJ - Temperature (_C) 10- 1 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71056 S-21251—Rev. B, 05-Aug-02 Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 10 10 6V VGS = 10 thru 7 V TC = -55_C 8 5V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 4V 2 25_C 6 125_C 4 2 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 4 5 6 Capacitance 400 0.4 VGS = 4.5 V 320 0.3 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 3 VGS - Gate-to-Source Voltage (V) 0.2 VGS = 10 V 0.1 Ciss 240 160 Coss 80 Crss 0.0 0 0 2 4 6 ID - Drain Current (A) Document Number: 71056 S-21251—Rev. B, 05-Aug-02 8 10 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 2.1 A VGS = 10 V ID = 2.1 A 8 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 10 P−CHANNEL 6 4 2 0 0 1 2 3 4 5 1.4 1.2 1.0 0.8 0.6 -50 6 -25 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage r DS(on)- On-Resistance ( W ) I S - Source Current (A) TJ = 25_C 0.00 100 125 150 0.3 ID = 2.1 A 0.2 0.1 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) 6 8 10 Single Pulse Power 50 0.4 40 Power (W) 0.6 0.2 4 VGS - Gate-to-Source Voltage (V) Threshold Voltage V GS(th) Variance (V) 75 0.0 0.1 ID = 250 mA 0.0 -0.2 30 20 10 -25 0 25 50 75 TJ - Temperature (_C) 2-6 50 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C www.vishay.com 25 0.4 10 -0.4 -50 0 TJ - Junction Temperature (_C) 100 125 150 0 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Time (sec) Document Number: 71056 S-21251—Rev. B, 05-Aug-02 Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 71056 S-21251—Rev. B, 05-Aug-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-7