Si3454ADV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.5 0.085 @ VGS = 4.5 V 3.8 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 3 mm 1 6 2 5 3 4 (3) G 2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1—E3 (Lead Free) Marking Code: (4) S A4xxx N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 4.5 3.4 3.6 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 2.7 20 1.7 1.0 2.0 1.14 1.3 0.73 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 5 sec Steady State Steady State RthJA RthJF Typical Maximum 50 62.5 90 110 30 36 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com 1 Si3454ADV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 70_C 25 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 15 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 4.5 A 0.048 0.060 VGS = 4.5 V, ID = 3.8 A 0.070 0.085 gfs VDS = 10 V, ID = 4.5 A 10 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 9 15 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 2.5 nC 1.5 0.5 2.9 td(on) 10 20 tr 10 20 20 35 7 15 40 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 10 V, ID = 4.5 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 TC = −55_C VGS = 10 thru 5 V 16 4V 12 8 3V 4 0 0.0 www.vishay.com 25_C 125_C 12 8 4 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) 2 I D − Drain Current (A) I D − Drain Current (A) 16 3.5 4.0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 71108 S-40424—Rev. C, 15-Mar-04 Si3454ADV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 600 Ciss 500 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.20 0.15 0.10 VGS = 4.5 V VGS = 10 V 400 300 200 0.05 Coss 100 0.00 Crss 0 0 4 8 12 16 20 0 6 ID − Drain Current (A) 18 24 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 15 V ID = 4.5 A VGS = 10 V ID = 4.5 A 1.6 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 6 4 2 1.4 1.2 1.0 0.8 0 0 2 4 6 8 0.6 −50 10 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.15 ID = 4.5 A 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 71108 S-40424—Rev. C, 15-Mar-04 1.2 1.4 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3454ADV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA −0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 30 20 −0.4 10 −0.6 −0.8 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = _C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71108 S-40424—Rev. C, 15-Mar-04