Si4539ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.9 0.053 @ VGS = 4.5 V 4.9 0.053 @ VGS = - 10 V - 4.9 0.090 @ VGS = - 4.5 V - 3.7 D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 5 D2 G2 4 G2 G1 Top View Ordering Information: Si4539ADY Si4539ADY-T1 (with Tape and Reel) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 secs P-Channel Steady State 10 secs Steady State Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS "20 "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID 5.9 4.4 4.7 3.6 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V - 4.9 - 3.7 - 3.9 - 2.9 A 30 1.7 0.9 - 1.7 - 0.9 2.0 1.1 2 1.1 1.3 0.7 1.3 0.7 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF P-Channel Typ Max Typ Max 50 62.5 52 62.5 90 110 90 110 32 40 32 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71131 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 Si4539ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = - 250 mA P-Ch - 1.0 VDS = 0 V, VGS = "20 V N-Ch "100 VDS = 0 V, VGS = "20 V P-Ch "100 V VDS = 24 V, VGS = 0 V N-Ch 1 VDS = - 24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 55_C P-Ch VDS w 5 V, VGS = 10 V N-Ch 30 VDS p - 5 V, VGS = - 10 V P-Ch - 30 nA mA -5 A VGS = 10 V, ID = 5.9 A N-Ch 0.032 0.036 VGS = - 10 V, ID = - 4.9 A P-Ch 0.043 0.053 VGS = 4.5 V, ID = 4.9 A N-Ch 0.042 0.053 VGS = - 4.5 V, ID = - 3.7 A P-Ch 0.075 0.090 VDS = 15 V, ID = 5.9 A N-Ch 15 VDS = - 15 V, ID = - 4.9 A P-Ch 9 IS = 1.7 A, VGS = 0 V N-Ch 0.80 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 0.80 - 1.2 N-Ch 13 20 25 W S V Dynamicb Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Rg N-Channel VDS = 15 V V, VGS = 10 V, V ID = 5.9 59A P-Channel P Channel VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A P-Ch 15 N-Ch 2.3 P-Ch 4 nC N-Ch 2 P-Ch 2.0 N-Ch 0.5 2.2 P-Ch 5 12.6 N-Ch Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source-Drain Reverse Recovery Time td(on) d( ) tr td(off) d( ff) 12 P-Ch 7 15 N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 14 25 P-Ch 10 20 P-Channel P Channel VDD = - 15 1 V, V RL = 1 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W N-Ch 30 60 P-Ch 40 80 N-Ch 5 10 P-Ch 20 40 IF = 1.7 A, di/dt = 100 A/ms N-Ch 30 60 IF = - 1.7 A, di/dt = 100 A/ms P-Ch 30 60 tf trr 6 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NCHANNEL Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 5 V 25_C 24 I D - Drain Current (A) 24 I D - Drain Current (A) TC = - 55_C 4V 18 12 3V 6 18 125_C 12 6 2V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 VDS - Drain-to-Source Voltage (V) 2 On-Resistance vs. Drain Current 4 5 Capacitance 1000 C - Capacitance (pF) 0.08 r DS(on) - On-Resistance ( W ) 3 VGS - Gate-to-Source Voltage (V) 0.06 VGS = 4.5 V 0.04 VGS = 10 V 800 Ciss 600 400 0.02 Coss 200 Crss 0.00 0 0 6 12 18 24 30 0 6 ID - Drain Current (A) 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 5.9 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 8 6 4 2 VGS = 10 V ID = 5.9 A 1.4 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Document Number: 71131 S-03951—Rev. B, 26-May-03 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NCHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.08 30 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 5.9 A 0.06 0.04 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 VSD - Source-to-Drain Voltage (V) Threshold Voltage 8 10 Single Pulse Power 0.4 50 0.2 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 2-4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) NCHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 7 V TC = - 55_C 6V 24 25_C 24 I D - Drain Current (A) I D - Drain Current (A) 5V 18 12 4V 6 18 125_C 12 6 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 VDS - Drain-to-Source Voltage (V) 2 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1500 C - Capacitance (pF) 0.20 r DS(on) - On-Resistance ( W ) 3 0.15 VGS = 4.5 V 0.10 VGS = 10 V 1200 Ciss 900 600 0.05 Coss 300 Crss 0.00 0 0 6 12 18 ID - Drain Current (A) Document Number: 71131 S-03951—Rev. B, 26-May-03 24 30 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-5 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 4.9 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 4.9 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.40 30 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.35 TJ = 150_C 10 TJ = 25_C 0.30 0.25 ID = 4.9 A 0.20 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD - Source-to-Drain Voltage (V) 2 4 Threshold Voltage 10 50 0.6 40 ID = 250 mA 0.4 Power (W) V GS(th) Variance (V) 8 Single Pulse Power 0.8 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (_C) www.vishay.com 2-6 6 VGS - Gate-to-Source Voltage (V) 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 Time (sec) Document Number: 71131 S-03951—Rev. B, 26-May-03 Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71131 S-03951—Rev. B, 26-May-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-7