Si4940DY New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.036 @ VGS = 10 V 5.7 0.059 @ VGS = 4.5 V 4.4 D TrenchFETr Power MOSFET APPLICATIONS D Automotive Airbags D1 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 5.7 4.2 4.5 3.4 IDM A 30 1.8 0.9 2.1 1.1 1.3 0.7 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 50 60 90 110 28 34 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71649 S-04277—Rev. B, 16-Jul-01 www.vishay.com 1 Si4940DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 10 V rDS(on) Forward Transconductancea Diode Forward Voltagea V nA m mA 30 A VGS = 10 V, ID = 5.7 A 0.03 0.036 VGS = 4.5 V, ID = 4.4 A 0.048 0.059 gfs VDS = 15 V, ID = 5.7 A 12 VSD IS = 1.8 A, VGS = 0 V 0.8 1.1 9.0 14 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.3 Gate Resistance RG 1.0 Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 20 V, VGS = 10 V, ID = 5.7 A 1.8 nC W td(on) 7 15 tr 12 25 15 30 8 15 35 70 VDD = 20 V, RL = 20 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 1.8 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 6 V 5V 25 I D – Drain Current (A) I D – Drain Current (A) 25 20 15 4V 10 5 20 15 10 TC = 125_C 5 25_C 3V –55_C 0 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Document Number: 71649 S-04277—Rev. B, 16-Jul-01 Si4940DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 600 500 0.08 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.10 VGS = 4.5 V 0.06 VGS = 10 V 0.04 Ciss 400 300 200 Coss 0.02 Crss 100 0.00 0 0 5 10 15 20 25 0 30 8 ID – Drain Current (A) 24 32 40 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 2.0 VDS = 20 V ID = 5.7 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 16 8 6 4 2 VGS = 10 V ID = 5.7 A 1.6 1.2 0.8 0.4 0 0 2 4 6 8 0.0 –50 10 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 30 r DS(on) – On-Resistance ( W ) I S – Source Current (A) ID = 3 A TJ = 150_C 10 TJ = 25_C 1 0.0 0.08 ID = 5.7 A 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71649 S-04277—Rev. B, 16-Jul-01 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si4940DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 50 40 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 0.2 –0.2 30 20 –0.4 10 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 1 0.1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71649 S-04277—Rev. B, 16-Jul-01