Si4562DY Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V 7.1 0.035 at VGS = 2.5 V 6.0 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V - 5.0 • TrenchFet® Power MOSFET: 2.5 Rated Pb-free N-Channel 20 P-Channel - 20 Available RoHS* COMPLIANT SO-8 D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G2 G1 Top View Ordering Information: Si4562DY-T1 Si4562DY-T1-E3 (Lead (Pb)-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM IS Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C N-Channel 20 P-Channel - 20 ± 12 7.1 5.7 40 1.7 - 6.2 - 4.9 - 40 - 1.7 Unit V A TJ, Tstg 2.0 1.3 - 55 to 150 °C Symbol N- or P-Channel Unit RthJA 62.5 °C/W PD W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 Board, t ≤10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Work-in-Progress www.vishay.com 1 Si4562DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) N-Ch 0.6 1.6 P-Ch - 0.6 - 1.6 VDS = 0 V, VGS = ± 12 V IGSS IDSS VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA N-Ch ± 100 P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch VDS ≥ 5 V, VGS = 4.5 V N-Ch 20 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 20 VGS = 4.5 V, ID = 7.1 A N-Ch 0.019 VGS = - 4.5 V, ID = - 6.2 A P-Ch 0.027 0.033 VGS = 2.5 V, ID = 6.0 A N-Ch 0.025 0.035 VGS = - 2.5 V, ID = - 5.0 A P-Ch 0.040 0.050 VDS = 10 V, ID = 7.1 A N-Ch 27 VDS = - 10 V, ID = - 6.2 A P-Ch 20 IS = 1.7 A, VGS = 0 V N-Ch 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 1.2 ID(on) rDS(on) gfs VSD V nA µA -5 A 0.025 Ω S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Sorce-Drain Reverse Recovery Tme N-Channel VDS = 10 V, VGS = 4.5 V, ID = 7.1 A tr td(off) tf P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 25 50 P-Ch 22 35 N-Ch 6.5 P-Ch 7 nC N-Ch 4 P-Ch 3.5 N-Ch 40 P-Ch 27 50 N-Ch 40 60 60 P-Ch 32 50 N-Ch 90 150 P-Ch 95 150 N-Ch 40 60 P-Ch 45 70 IF = 1.7 A, di/dt = 100 A/µs N-Ch 40 80 IF = - 1.7 A, di/dt = 100 A/µs P-Ch 40 80 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω trr N-Ch ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 5 thru 3 V 2.5 V 30 I D − Drain Current (A) I D − Drain Current (A) 30 20 2V 10 20 TC = 125 °C 10 25 °C 1, 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 55 °C 0 0.0 4.0 0.5 VDS − Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 4000 0.08 3200 C − Capacitance (pF) r DS(on)− On-Resistance (Ω) 1.0 0.06 0.04 VGS = 2.5 V 0.02 Ciss 2400 1600 Coss 800 VGS = 4.5 V Crss 0.00 0 0 10 20 30 40 0 4 ID − Drain Current (A) 8 On-Resistance vs. Drain Current 16 20 Capacitance 1.6 5 VGS = 4.5 V ID = 7.1 A VDS = 10 V ID = 7.1 A 1.4 4 rDS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 3 2 1.2 1.0 0.8 1 0 0 5 10 15 Qg − Total Gate Charge (nC) Gate Charge Document Number: 70717 S-51109-Rev. B, 04-Apr-06 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ − Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4562DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.10 40 ID = 7.1 A r DS(on) − On-Resistance (Ω) I S − Source Current (A) 0.08 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 VSD − Source-to-Drain Voltage (V) 2 GS 3 4 5 − Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 30 0.2 24 ID = 250 µA 0.0 Power (W) V GS(th) Variance (V) 1 - 0.2 - 0.4 18 12 6 - 0.6 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 TJ − Temperature (°C) 1.00 10.00 Time (sec) Threshold Voltage Single Pulse Power 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 5, 4.5, 4, 3.5 V TC = - 55 °C 32 3V 24 25 °C I D − Drain Current (A) I D − Drain Current (A) 32 2.5 V 16 2V 8 125 °C 24 16 8 1.5 V 0 0 0 1 2 3 4 5 0 1 VDS − Drain-to-Source Voltage (V) 0.08 3600 C − Capacitance (pF) r DS(on)− On-Resistance (Ω) 4500 VGS = 2.5 V VGS = 4.5 V 0.02 Ciss 2700 1800 Crss Coss 900 0.00 0 0 8 16 24 32 40 0 4 ID − Drain Current (A) 8 12 16 20 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VDS = 10 V ID = 6.2 A 4 1.4 rDS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 4 Transfer Characteristics 0.10 0.04 3 VGS − Gate-to-Source Voltage (V) Output Characteristics 0.06 2 3 2 VGS = 4.5 V ID = 6.2 A 1.2 1.0 0.8 1 0 0 5 10 15 Qg − Total Gate Charge (nC) Gate Charge Document Number: 70717 S-51109-Rev. B, 04-Apr-06 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ − Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 5 Si4562DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.10 40 r DS(on)− On-Resistance (Ω) I S − Source Current (A) 0.08 TJ = 150 °C 10 TJ = 25 °C ID = 6.2 A 0.06 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 1 VSD − Source-to-Drain Voltage (V) 2 GS 3 4 5 − Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 30 0.3 Power (W) V GS(th) Variance (V) 24 ID = 250 µA 18 12 0.0 6 - 0.3 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 TJ − Temperature (°C) 1.00 10.00 Time (sec) Threshold Voltage Single Pulse Power vs. Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 °C/W 3. TJM − TA = PDMZthJA(t) 0.02 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70717. www.vishay.com 6 Document Number: 70717 S-51109-Rev. B, 04-Apr-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1