Si4835BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.018 @ VGS = −10 V −9.6 0.030 @ VGS = −4.5 V −7.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D 100% Rg Tested Qg (Typ) −25 APPLICATIONS D Load Switches − Notebook PCs − Desktop PCs S SO-8 S 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D P-Channel MOSFET Ordering Information: Si4835BDY Si4835BDY-T1 (with Tape and Reel) Si4835BDY—E3 (Lead (Pb)-Free) Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "25 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −9.6 −7.4 −7.7 −5.9 IDM −50 −2.1 −1.3 2.5 1.5 1.6 0.9 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 39 50 70 85 18 22 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72029 S-41912—Rev. D, 25-Oct-04 www.vishay.com 1 Si4835BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 Typ Max Unit −3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Voltagea VDS = −30 V, VGS = 0 V −1 VDS = −30 V, VGS = 0 V, TJ = 55_C −5 VDS v −5 V, VGS = −10 V mA −50 A VGS = −10 V, ID = −9.6 A 0.014 0.018 VGS = −4.5 V, ID = −7.5 A 0.023 0.030 gfs VDS = −15 V, ID = −9.6 A 30 VSD IS = −2.1 A, VGS = 0 V −0.8 −1.2 25 37 VDS = −15 V, VGS = −5 V, ID = −9.6 A 6.5 rDS(on) DS( ) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "25 V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1.0 td(on) Rise Time tr Turn-Off Delay Time VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 12.5 IF = −2.1 A, di/dt = 100 A/ms 2.9 4.9 15 25 13 20 60 100 45 70 45 80 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 TC = −55_C VGS = 10 thru 5 V 25_C 40 4V I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 125_C 30 20 10 3V 0 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 6 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72029 S-41912—Rev. D, 25-Oct-04 Si4835BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3200 0.04 0.03 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.05 VGS = 4.5 V 0.02 VGS = 10 V 2400 Ciss 1600 800 0.01 Coss Crss 0.00 0 0 10 20 30 40 0 50 6 ID − Drain Current (A) Gate Charge 24 30 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 9.6 A VGS = 10 V ID = 9.6 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 18 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 10 20 30 40 0.6 −50 50 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 60 I S − Source Current (A) 12 0.04 ID = 9.6 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72029 S-41912—Rev. D, 25-Oct-04 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4835BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 80 60 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.4 0.0 40 20 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited *rDS(on) Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72029 S-41912—Rev. D, 25-Oct-04 Si4835BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72029. Document Number: 72029 S-41912—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1