Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • TrenchFET® Power MOSFET Pb-free - 20 APPLICATIONS Available RoHS* • Load Switch • Battery Switch COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 G2 G1 6 S2 5 G2 Top View Ordering Information: Si6983DQ-T1 Si6983DQ-T1-E3 (Lead (Pb)-free) D2 D1 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 sec Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.6 - 4.3 - 3.7 - 30 - 1.0 A - 0.7 1.14 0.83 0.73 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.4 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF Typical Maximum 86 110 124 150 52 65 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72367 S-60774-Rev. C, 08-May-06 www.vishay.com 1 Si6983DQ Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min - 0.40 Typ Max Unit Static VGS(th) VDS = VGS, ID = - 400 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.4 A 0.019 0.024 rDS(on) VGS = - 2.5 V, ID = - 4.8 A 0.024 0.030 VGS = - 1.8 V, ID = - 4.0 A 0.033 0.042 gfs VDS = - 5 V, ID = - 5.4 A 25 VSD IS = - 1.0 A, VGS = 0 V - 0.63 1.1 20 30 VDS = - 10 V, VGS = - 4.5 V, ID = - 5.4 A 3.0 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a - 1.0 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 °C - 25 µA - 20 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance f = 1.0 MHz VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 4.5 td(on) Turn-On Delay Time nC 4.5 IF = - 1.0 A, di/dt = 100 A/µs 40 60 55 85 135 200 52 80 40 70 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 30 30 VGS = 5 thru 2.5 V TC = - 55 °C 2V 25 °C 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 1.5 V 6 125 °C 18 12 6 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72367 S-60774-Rev. C, 08-May-06 Si6983DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 0.10 3500 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) 3000 0.08 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 2500 Ciss 2000 1500 1000 0.02 Coss 500 VGS = 4.5 V 0.00 Crss 0 0 5 10 15 20 25 30 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.60 6 VGS = 4.5 V ID = 5.4 A VDS = 10 V ID = 5.4 A 5 1.40 r DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 4 3 2 1.20 1.00 0.80 1 0.60 - 50 0 0 5 10 15 20 25 30 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 100 0.08 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.07 10 TJ = 150 °C 1 TJ = 25 °C 0.06 0.05 ID = 5.4 A 0.04 0.03 0.02 0.01 0.1 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72367 S-60774-Rev. C, 08-May-06 1.5 0.00 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si6983DQ Vishay Siliconix New Product 0.4 100 0.3 80 0.2 ID = 400 µA Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C unless noted 0.1 60 40 0.0 20 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 Time (sec) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by rDS(on) I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 TC = 25 °C Single Pulse 1s 10 s dc 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 100 Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 124 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72367 S-60774-Rev. C, 08-May-06 Si6983DQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72367. Document Number: 72367 S-60774-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1