Si7962DP Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) Qg(Typ) 40 0.017 @ VGS = 10 V 11.1 46.2 TrenchFET Power MOSFET New Low Thermal Resistance PowerPAK Package Dual MOSFET for Space Savings 100% Rg Tested High Threshold Voltage At High Temperature PowerPAK SO-8 D1 S1 6.15 mm 1 5.15 mm G1 2 S2 3 G2 4 G1 D1 8 D2 G2 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET N-Channel MOSFET 5 Bottom View Ordering Information: Si7962DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Single Avalanche Current IS L = 0.1 mH Single Avalanche Energy Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range 5.7 40 A 2.9 IAS PD 7.1 8.9 1.2 30 EAS TA = 25C V 11.1 IDM Unit 45 mJ 3.5 1.4 2.2 0.9 TJ, Tstg −55 to 150 W C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 26 35 60 85 2.2 2.7 Unit C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72914 S-42058—Rev. B, 15-Nov-04 www.vishay.com 1 Si7962DP Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 A 3.4 IGSS Typ Max Unit 4.5 V VDS = 0 V, VGS = "20 V "100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea A 30 VDS w 5 V, VGS = 10 V A rDS(on) VGS = 10 V, ID = 11.1 A 0.0135 0.017 gfs VDS = 15 V, ID = 11.1 A 31 VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 46.2 70 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resostamce VDS = 20 V, VGS = 10 V, ID = 11.1 A f = 1 MHz Rg Turn-On Delay Time 16 1.1 td(on) Rise Time tr Turn-Off Delay Time VDD = 20 V, RL = 20 ID ^ 1 A, VGEN = 10 V, Rg = 6 td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 9.6 IF = 2.9 A, di/dt = 100 A/s 2.3 3.5 22 35 15 25 55 70 15 25 35 60 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 7 V 6V 32 I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 24 16 TC = 125C 8 5V 25C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55C 0 5 0 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Document Number: 72914 S-42058—Rev. B, 15-Nov-04 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 Capacitance 4000 C − Capacitance (pF) r DS(on) − On-Resistance ( ) 0.020 VGS = 10 V 0.010 0.005 Ciss 3200 2400 1600 Coss 800 0.000 0 0 5 10 15 20 25 30 35 40 0 8 ID − Drain Current (A) Gate Charge 24 32 40 On-Resistance vs. Junction Temperature 1.6 VDS = 20 V ID = 11.1 A VGS = 10 V ID = 11.1 A 8 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 16 VDS − Drain-to-Source Voltage (V) 10 6 4 2 1.2 1.0 0.8 0 0 10 20 30 40 0.6 −50 50 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.05 r DS(on) − On-Resistance ( ) TJ = 150C TJ = 25C 10 1 0.0 25 TJ − Junction Temperature (C) 40 I S − Source Current (A) Crss 0.04 ID = 11.1 A 0.03 0.02 0.01 0.00 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 72914 S-42058—Rev. B, 15-Nov-04 1.5 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.8 100 80 ID = 250 A −0.0 Power (W) V GS(th) Variance (V) 0.4 −0.4 60 40 −0.8 20 −1.2 −1.6 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 100 100 600 Safe Operating Area, Junction-To-Ambient IDM Limited *rDS(on) Limited P(t) = 0.0001 10 I D − Drain Current (A) 10 1 Time (sec) TJ − Temperature (C) P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 10 BVDSS Limited 0.01 0.1 P(t) = 1 TA = 25C Single Pulse dc 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 60C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72914 S-42058—Rev. B, 15-Nov-04 Si7962DP Vishay Siliconix TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72914. Document Number: 72914 S-42058—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1