FAIRCHILD BCP52_00

BCP51 ... BCP53
BCP51 ... BCP53
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
PNP
Version 2006-06-26
6.5
3
Power dissipation
Verlustleistung
±0.2
1.65
±0.1
Plastic case
Kunststoffgehäuse
1
0.7
2.3
3.5
±0.3
7
2
±0.2
4
Type
Code
1.3 W
3
3.25
Dimensions - Maße [mm]
1=B
2/4 = C
3=E
SOT-223
Weight approx.
Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BCP51
BCP52
BCP53
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
45 V
60 V
80 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
45 V
60 V
100 V
Collector-Base-voltage – Kollektor-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
1.3 W 1)
Collector current – Kollektorstrom (dc)
- IC
1A
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1.5 A
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Tj
TS
-55...+150°C
-55…+150°C
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis )
2
- VCE = 2 V, - IC = 5 mA
all groups
hFE
25
- VCE = 2 V, - IC = 150 mA
Group -6
Group -10
Group -16
hFE
hFE
hFE
40
63
100
–
–
–
100
160
250
- VCE = 2 V, - IC = 500 mA
all groups
hFE
25
–
–
- VCEsat
–
–
0.5 V
- VBE
–
–
1V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. )
2
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung )
2
- IC = 500 mA, - IB = 50 mA
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BCP51 ... BCP53
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- ICB0
- ICB0
–
–
–
–
100 nA
10 µA
- IEB0
–
–
100 nA
fT
–
120 MHz
–
hFE1/hFE2
–
–
1.6
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCB = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l IC l = 150 mA, l VCE l = 2 V
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 93 K/W 1)
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
RthS
< 27 K/W
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BCP54 ... BCP56
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG