BCP51 ... BCP53 BCP51 ... BCP53 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-06-26 6.5 3 Power dissipation Verlustleistung ±0.2 1.65 ±0.1 Plastic case Kunststoffgehäuse 1 0.7 2.3 3.5 ±0.3 7 2 ±0.2 4 Type Code 1.3 W 3 3.25 Dimensions - Maße [mm] 1=B 2/4 = C 3=E SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCP51 BCP52 BCP53 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 45 V 60 V 80 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 45 V 60 V 100 V Collector-Base-voltage – Kollektor-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) - IC 1A Peak Collector current – Kollektor-Spitzenstrom - ICM 1.5 A Peak Base current – Basis-Spitzenstrom - IBM 200 mA Tj TS -55...+150°C -55…+150°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis ) 2 - VCE = 2 V, - IC = 5 mA all groups hFE 25 - VCE = 2 V, - IC = 150 mA Group -6 Group -10 Group -16 hFE hFE hFE 40 63 100 – – – 100 160 250 - VCE = 2 V, - IC = 500 mA all groups hFE 25 – – - VCEsat – – 0.5 V - VBE – – 1V Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ) 2 - IC = 500 mA, - IB = 50 mA Base-Emitter voltage – Basis-Emitter-Spannung ) 2 - IC = 500 mA, - IB = 50 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCP51 ... BCP53 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - ICB0 - ICB0 – – – – 100 nA 10 µA - IEB0 – – 100 nA fT – 120 MHz – hFE1/hFE2 – – 1.6 Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCB = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz DC current gain ratio of the complementary pairs Verhältnis der Stromverstärkungen komplementärer Paare l IC l = 150 mA, l VCE l = 2 V Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BCP54 ... BCP56 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG