MMBTA55 ... MMBTA56 MMBTA55 ... MMBTA56 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBTA55 MMBTA56 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 60 V 80 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 60 V 80 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 4V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (dc) - IC 500 mA Base current – Basisstrom - IB 100 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Tj TS -55...+150°C -55…+150°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. 100 100 – – – – - VCEsat – – 0.25 V - VBE – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis ) 2 - IC = 10 mA, - VCE = 1 V - IC = 100 mA, - VCE = 1 V hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) - IC = 100 mA, - IB = 10 mA Base-Emitter voltage – Basis-Emitter-Spannung - IC = 100 mA, - VCE = 1 V 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 MMBTA55 ... MMBTA56 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - ICBO - ICBO – – – – 100 nA 100 nA - IEB0 – – 100 nA fT 50 MHz – – Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 60 V, (E open) - VCB = 80 V, (E open) MMBTA55 MMBTA56 Emitter-Base cutoff current – Emitter-Basis-Reststrom - VEB = 4 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IC = 100 mA, - VCE = 1 V, f = 100 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren MMBTA05, MMBTA06 Marking - Stempelung MMBTA55 = 2H MMBTA56 = 2G(M) 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG