ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Formerly developmental type TA49413. Package Symbol JEDEC TO-263AB JEDEC TO-220AC CATHODE (BOTTOM SIDE METAL) K ANODE CATHODE CATHODE (FLANGE) N/C A ANODE Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR Parameter Repetitive Peak Reverse Voltage Ratings 1200 Units V Working Peak Reverse Voltage 1200 V DC Blocking Voltage 1200 V A IF(AV) Average Rectified Forward Current (TC = 105oC) 8 IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A Power Dissipation 71 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 150 °C 300 260 °C °C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S May 2002 Device Marking R8120P2 Device ISL9R8120P2 Package TO-220AC Tape Width N/A Quantity 50 R8120S3S ISL9R8120S3S TO-263AB 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA Off State Characteristics IR Instantaneous Reverse Current VR = 1200V On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25°C - 2.8 3.3 V TC = 125°C - 2.7 3.1 V VR = 10V, IF = 0A - 30 - pF ns Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 32 IF = 8A, dIF/dt = 100A/µs, VR = 30V - 35 44 ns IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C - 300 - ns - 4.3 - A - 525 - nC ns IF = 8A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 8A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C Maximum di/dt during tb - 375 - - 9 - - - 5.5 - A - 1.1 - µC - 200 - ns - 5.5 - - - 11 - A - 1.2 - µC - 310 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-220, TO-263 - - 1.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-220, TO-263 - - 62 °C/W ©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Package Marking and Ordering Information 1000 20 150oC 16 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 18 14 12 10 150oC 8 6 125oC 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 125oC 100oC 10 75oC 1 0.1 25oC 2 100 3.5 4.0 25oC 0.01 200 4.5 300 400 500 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 500 900 1000 1100 1200 VR = 780V, TC = 125oC 400 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 800 450 400 350 300 250 200 150 tb AT IF = 16A, 8A, 4A 350 300 250 200 150 100 100 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 50 0 2 4 10 6 8 12 IF, FORWARD CURRENT (A) 14 0 200 16 dIF/dt = 800A/µs 11 dIF/dt = 600A/µs 10 9 8 7 6 5 dIF/dt = 200A/µs 4 0 2 4 6 8 10 12 14 16 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 400 500 600 700 800 900 1000 Figure 4. ta and tb Curves vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 780V, TC = 125oC 13 12 300 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current 14 ta AT IF = 16A, 8A, 4A 50 0 IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 700 Figure 2. Reverse Current vs Reverse Voltage VR = 780V, TC = 125oC tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 450 600 VR , REVERSE VOLTAGE (V) 16 VR = 780V, TC = 125oC IF = 16A 14 12 IF = 8A 10 IF = 4A 8 6 4 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Typical Performance Curves 2000 VR = 780V, TC = 125oC QRR, REVERSE RECOVERED CHARGE (nC) 11 IF = 16A 10 IF = 8A 9 8 7 6 IF = 4A 5 4 3 2 100 200 900 300 400 500 600 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/µs) IF = 8A 1200 1000 IF = 4A 800 600 200 400 300 200 100 100 10 400 500 600 700 800 -4.4 900 1000 500 IF = 8A, VR = 780V, dIF/dt = 200A/µs -4.8 450 IRM(REC) -5.2 400 -5.6 350 tRR -6.0 25 50 VR , REVERSE VOLTAGE (V) 75 100 125 TC, CASE TEMPERATURE Figure 9. Junction Capacitance vs Reverse Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 300 Figure 8. Reverse Recovered Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) f = 1MHZ 1 1400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 500 0.1 IF = 16A 1600 400 100 1000 Figure 7. Reverse Recovery Softness Factor vs dIF/dt 0 0.03 VR = 780V, TC = 125oC 1800 tRR , RECOVERY TIMES (ns) S, REVERSE RECOVERY SOFTNESS FACTOR 12 300 150 (oC) Figure 10. Reverse Recovery Current and Times vs Case Temperature 8 6 4 2 0 90 100 110 120 130 TC, CASE TEMPERATURE 140 150 (oC) Figure 11. DC Current Derating Curve ©2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJA, NORMALIZED THERMAL IMPEDANCE 1.0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 13. Itrr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms ISL9R8120P2 / ISL9R8120S3S Rev. A ISL9R8120P2 / ISL9R8120S3S Typical Performance Curves (Continued) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5