VISHAY TFDU5102-TR3

TFDU5102
Vishay Semiconductors
Fast Infrared Transceiver Module Family
(MIR, 1 Mbit/s) for 2.6 V to 5.5 V Operation
Description
The TFDU5102 is a low–power infrared transceiver
module compliant to the IrDA physical layer standard
for fast infrared data communication, supporting IrDA
speeds up to 1 Mbit/s (MIR), HP-SIR, Sharp ASK and
carrier based remote control modes up to 2 MHz.
Integrated within the transceiver module is a photo PIN
diode, infrared emitter (IRED), and a low–power
CMOS control IC to provide a total front–end solution
in a single package.
The transceiver is capable of directly interfacing with
a wide variety of I/O devices which perform the
modulation/ demodulation function, including National
Semiconductor’s PC87338, PC87108 and PC87109,
SMC’s FDC37C669, FDC37N769 and CAM35C44,
and Hitachi’s SH3. At a minimum, a current–limiting
resistor in series with the infrared emitter and a VCC
bypass capacitor are the only external components
required to implement a complete solution.
Features
Compliant to the latest IrDA physical layer standard
(Up to 1 Mbit/s),
HP–SIR, Sharp ASK and TV Remote
Baby Face (Universal) Package Capable of
Surface Mount Solderability to Side and
Top View Orientation
For 3.0 V and 5 V Applications
Directly Interfaces with Various Super I/O and
Controller Devices
Operates from 2.6 V to 5.5 V
within specification,operational down to 2.4 V
Low Power Consumption (3 mA Supply Current)
Built–In EMI Protection – No External Shielding
Necessary
Power Shutdown Mode (1 A Shutdown Current)
Few External Components Required
Package:
Universal (9.7 × 4.7 × 4.0 mm)
Backward Pin to Pin Compatible to all Vishay
Telefunken SIR and FIR Infrared Transceivers
Tri-State-Receiver Output, Floating when in
Shutdown Mode
High Efficiency Emitter
Split Power Supply, Transmitter and Receiver can
be operated from two Power Supplies with relaxed
Requirements, saving costs
Applications
Notebook Computers, Desktop PCs,
Palmtop Computers (Win CE, Palm PC), PDAs
Telecommunication Products
(Cellular Phones, Pagers)
Digital Still and Video Cameras
Internet TV Boxes, Video Conferencing Systems
Printers, Fax Machines, Photocopiers,
Screen Projectors
External Infrared Adapters (Dongles)
Medical and Industrial Data Collection
Package
TFDU5102
Baby Face (Universal)
Document Number 82535
Rev. A1.1, 12-Nov-02
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1 (11)
TFDU5102
Vishay Semiconductors
Ordering Information
Part Number
TFDU5102–TR3
TFDU5102–TT3
Qty / Reel
1000 pcs
1000 pcs
Description
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for top view surface mounting
Functional Block Diagram
VCC
Driver
Amplifier
Comparator
Rxd
IRED Anode
AGC
Logic
SD/Mode
Txd
IRED Cathode
Open Drain Driver
GND
Figure 1. Functional Block Diagram
Pin Description
Pin Number
1
Function
IRED Anode
2
3
4
5
6
7
IRED Cathode
Txd
Rxd
SD/Mode
VCC
Mode
8
GND
Description
IRED anode, to be externally connected to VCC through a
current control resistor. This pin is allowed to be supplied
from an uncontrolled power supply separated from the
controlled VCC supply
IRED cathode, internally connected to driver transistor
Transmit Data Input
Pin is floating when device is in shutdown mode
Shutdown/ Mode
Supply Voltage
HIGH: High speed mode; LOW: Low speed mode,
SIR only (see chapter “Mode Switching”)
Ground
I/O
Active
I
O
I
HIGH
LOW
HIGH
I
Baby Face (Universal)
IRED
Detector
Figure 2. Pinnings
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Document Number 82535
Rev. A1.1, 12-Nov-02
TFDU5102
Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage Range,
Transceiver
0 V <VCC2 <6 V
VCC1
– 0.5
6
V
Supply Voltage Range,
Transmitter
0 V <VCC1 <6 V
VCC2
– 0.5
6
V
Input Currents
For all Pins, Except IRED
Anode Pin
10
mA
25
mA
Output Sinking Current
Power Dissipation
PD
350
mW
Junction Temperature
TJ
125
°C
Ambient Temperature
Range (Operating)
Tamb
–25
+85
°C
Storage Temperature
Range
Tstg
–25
+85
°C
240
°C
Soldering Temperature
See Derating Curve
See Recommended Solder
Profile (see Figure 9)
Average Output Current
IIRED (DC)
130
mA
Repetitive Pulsed Output <90 µs, ton <20%
Current
IIRED (RP)
600
mA
IRED Anode Voltage
VIREDA
– 0.5
6
V
Transmitter Data Input
Voltage
VTxd
– 0.5
VCC1
+0.5
V
Receiver Data Output
Voltage
VRxd
– 0.5
VCC1
+0.5
V
2.5
Virtual Source Size
Method:
(1–1/e) encircled energy
d
Maximum Intensity for
Class 1
IEC60825–1 or
EN60825–1,
edition Jan.2001
Ie
*)
**)
2.8
mm
*)
mW/sr
(500) **)
Due to the internal limitation measures the device is a “class 1” device
IrDA specifies the max. intensity with 500 mW/sr
Document Number 82535
Rev. A1.1, 12-Nov-02
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TFDU5102
Vishay Semiconductors
Electrical Characteristics.
Tamb = 25C, VCC = 3.0 V to 5.25 Vunless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions / Pins
Symbol
Min.
VCC
2.6
Typ.
Max.
Unit
5.5
V
Transceiver
Supply Voltage
Dynamic Supply Current
Standby Supply Current
Receive mode only.
In transmit mode, add additional 85 mA (typ) for IRED current
SD = Low, Ee = 0 klx
ICC
3
4.5
mA
SD = Low, Ee = 1 klx *)
ICC
3
4.5
mA
SD = High,
Mode = Floating,
T = 25°C, Ee = 0 klx
T = 25°C, Ee = 1 klx *)
ISD
1
1.5
µA
µA
SD = High, T = 85°C,
Mode = Floating,
Not Ambient Light
Sensitive
ISD
5
µA
+85
°C
0.8
V
Operating Temperature
Range
TA
–25
Output Voltage Low
Rload = 2.2 k,
Cload = 15 pF
VOL
Output Voltage High
Rload = 2.2 k,
Cload = 15 pF
VOH
VCC–0.5
VIL
0
CMOS level **)
VIH
0.9 x VCC
V
TTL level, VCC ≥ 4.5 V
VIH
2.4
V
Input Leakage Current
(Txd, SD/ Mode)
IL
–10
+10
µA
Input Leakage Current,
Mode
IL
–80
+80
µA
Input Capacitance
CI
5
pF
Input Voltage Low
(Txd, SD/ Mode, Mode)
Input Voltage
g High
g
(Txd, SD/ Mode, Mode)
*)
**)
0.5
V
0.8
V
Standard Illuminant A
The typical threshold level is between 0.5 x VCC/2 (VCC = 3 V) and 0.4 x VCC (VCC = 5.5 V) .
It is recommended to use the specified min/ max values to avoid increased operating current.
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Document Number 82535
Rev. A1.1, 12-Nov-02
TFDU5102
Vishay Semiconductors
Optoelectronic Characteristics
Tamb = 25C, VCC = 3.0 V to 5.25 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Receiver
Minimum Detection
Threshold Irradiance,
SIR Mode
Minimum Detection
Threshold Irradiance,
MIR Mode
Maximum Detection
Threshold Irradiance
Logic LOW Receiver
Input Irradiance
Rise Time of Output
Signal
Fall Time of Output
Signal
Rxd Pulse Width of
Output Signal, 50%
SIR Mode
Rxd Pulse Width of
Output Signal, 50%
MIR Mode
Stochastic Jitter, Leading
Edge, MIR Mode
Latency
Transmitter
IRED Operating Current
Output Radiant Intensity
(see Figure 3)
Output Radiant Intensity
Output Radiant Intensity,
Angle of Half Intensity
Peak – Emission
Wavelength
Optical Output Pulse
Duration
Test Conditions
TFDU5102
9.6 kbit/s to 115.2 kbit/s
= 850 nm to 900 nm
TFDU5102
1.152 Mbit/s
= 850 nm to 900 nm
= 850 nm to 900 nm
Min.
Typ.
Max.
Unit
Ee
25
40
mW/m 2
Ee
65
95
mW/m 2
kW/m 2
Ee
5
Ee
4
10% to 90%, @2.2 kΩ, 15 pF
tr (Rxd)
10
40
ns
90% to 10%, @2.2 kΩ, 15 pF
tf (Rxd)
10
40
ns
tPW
tPW
1.2
1.2
µs
µs
tPW
110
20
1/2 bit
length
260
±10
±25
ns
tL
120
300
µs
ID
Ie
0.4
170
0.55
350
A
mW/sr
0.04
mW/sr
Input pulse length 20 µs, 9.6 kbit/s
Input pulse length 1.41 s,
115.2 kbit/s
Input pulse length 217 ns,
1.152 Mbit/s
Input Irradiance = 100 mW/m2,
1.152 Mbit/s
R1*) = 7.2 Ω, VCC = 5.0 V
VCC = 5.0 V, α = 0, 15
Txd = High,
SD = Low, R1 = 7.2 Ω
VCC = 5.0 V, α = 0, 15
Txd = Low, SD = High,
(Receiver is inactive as long as
SD = High) R1 = 7.2 Ω
120
Input pulse width 217 ns,
1.152 Mbit/s
Input pulse width t < 80 µs
Input pulse width t ≥ 80 µs
10
mW/m 2
10
Ie
±24
Optical Rise Time,
Fall Time
Optical Overshoot
*)
Symbol
P
880
topt
207
topt
tropt,
tfopt
217
°C
900
nm
227
ns
80
40
µs
µs
ns
10
%
t
10
ns
R1: control series resistor for current limitation
Document Number 82535
Rev. A1.1, 12-Nov-02
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TFDU5102
Vishay Semiconductors
Recommended Circuit Diagram
The only required component for designing an
IrDA 1.3 compatible design using Vishay Telefunken
transceivers is a current limiting resistor, R1, to the
IRED. However, depending on the entire system
design and board layout, additional components may
be required (see figure 3).
The placement of these parts is critical. It is strongly
recommended to position C2 as near as possible to the
transceiver power supply pins. An electrolytic
capacitor should be used for C1 while a ceramic
capacitor is used for C2.
VCC2
500
R1
Rxd
IRED
Anode
Txd
Rxd
TFDU5102
C1
C2
Vcc
GND
GND
SD/Mode
Mode
5.0V
400
Intensity (mW/sr)
IRED
Cathode
R2
SD/Mode
min. Rdson, min. VF
300
200
5.0V
100
Vcc=4.75V
max.Rdson, max.VF
min. intensity in emission cone 15°
0
Txd
Figure 3. Recommended Application Circuit
Vishay Telefunken transceivers integrate a sensitive
receiver and a built–in power driver. The combination
of both needs a careful circuit board layout. The use of
thin, long resistive and inductive wiring should be
avoided. The inputs (Txd, SD/Mode) and the output
Rxd should be directly (DC) coupled to the I/O circuit.
R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED,
the value of the resistor should be reduced. Similarly,
to reduce the output power of the IRED, the value of
the resistor should be increased. For typical values of
R1 see figure 4. For IrDA compliant operation, a
current control resistor of 7.2 Ω is recommended. For
compensating losses of the cosmetic window,
reducing that value to 5.6 Ω is acceptable. The upper
drive current limitation is dependent on the duty cycle
and is given by the absolute maximum ratings on the
data sheet.
R2, C1 and C2 are optional and dependent on the
quality of the supply voltage VCC and injected noise.
An unstable power supply with dropping voltage during
transmission may reduce sensitivity (and transmission
range) of the transceiver.
0
2
4
6
8
10
12
14
16
Current Control Resistor ( )
14379
Figure 4. Intensity Ie vs. Current Control Resistor R1
5 V Applications
700
max. intensity in
emission cone 15°
3.6V
600
Intensity (mW/sr)
Note: outlined components are optional depending
on the quality of the power supply
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6 (11)
max. intensity in
emission cone 15°
5.25V
VCC1
min. Rdson, min. VF
500
min. intensity in
emission cone 15°
400
3.3V
300
max. Rdson, max. VF
200
3.3V
100
Vcc=3.0V
0
0
15111
2
4
6
8
10
Current Control Resistor ( )
12
Figure 5. Intensity Ie vs. Current Control Resistor R1,
3 V Applications
In addition, when connecting the described circuit to
the power supply, low impedance wiring should be
used.
Document Number 82535
Rev. A1.1, 12-Nov-02
TFDU5102
Vishay Semiconductors
Table 1. Recommended Application Circuit Components
Component
Recommended Value
Vishay Part Number
C1
C2
4.7 F, 16 V
0.1 µF, Ceramic
293D 475X9 016B 2T
VJ 1206 Y 104 J XXMT
R1
5 V supply voltage: 7.2 Ω
(–5.6 Ω, see text) 0.25 W
(recommend using
two 3.6 , 0.125 W resistors in series)
3.3 V supply voltage: 3.6 Ω, 0.25 W
(recommend using
two 1.8 , 0.125 W resistors in series)
CRCW–1206–3R60–F–RT1
R2
CRCW–1206–1R80–F–RT1
CRCW–1206–47R0–F–RT1
47 Ω , 0.125 W
I/O and Software
In the description, already different I/Os are
mentioned. Differnt combinations are tested and the
function verified with the special drivers available from
the I/O suppliers. In special cases refer to the I/O
manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
50%
SD/Mode
ts
th
High : MIR
Txd
50%
50%
Low : SIR
Control: Differences to TFDx6000 Series
For applications using I/Os from NSC, Winbond and TI
no software upgrade is necessary. In combination with
the latest SMSC controllers for Microsoft
Windows 98 a software upgrade is necessary,
drivers are available from SMSC and Vishay
Semiconductor GmbH. This software is intended to
work with Windows 95, too. Alternatively the
HP/ Sharp settings can be selected. The Microsoft
Operating
Systems
NT 5.0
Beta 2
and
Windows 2000 provide Miniport device drivers.
Mode Switching
The TFDU5102 do not power on with a default mode,
therefore the data transfer rate has to be set by a
programming sequence using the Txd and SD/ Mode
inputs as described below or selected by setting the
Mode Pin. The Mode Pin can be used to statically set
the mode (Mode Pin: LOW: SIR, HIGH: 0.576 Mbit/s
to 1 Mbit/s). When using the Mode Pin, the standby
current may increase to about 50 to 60 A when high
or low. If not used or in standby mode, the mode input
should float to minimize standby current. The low
frequency mode covers speeds up to 115.2 kbit/s.
Signals with higher data rates should be detected in
the high frequency mode. Lower frequency data can
also be received in the high frequency mode but with
reduced sensitivity. To switch the transceivers from
low frequency mode to the high frequency mode and
vice versa, the programming sequences described
below are required.
Document Number 82535
Rev. A1.1, 12-Nov-02
Figure 6. Mode Switching Timing Diagram
Setting to the High Bandwidth Mode
(0.576 Mbit/s to 1 Mbit/s)
1. Set SD/MODE input to logic “HIGH”.
2. Set Txd input to logic “HIGH”. Wait ts ≥ 200 ns.
3. Set SD/MODE to logic “LOW” (this negative edge
latches state of Txd, which determines speed
setting).
4. After waiting th ≥ 200 ns Txd can be set to logic
“LOW”. The hold time of Txd is limited by the
maximum allowed pulse length.
Txd is now enabled as normal Txd input for the high
bandwidth mode.
Setting to the Lower Bandwidth Mode
(2.4 kbit/s to 115.2 kbit/s)
1. Set SD/MODE input to logic “HIGH”.
2. Set Txd input to logic “LOW”. Wait ts ≥ 200 ns.
3. Set SD/MODE to logic “LOW” (this negative edge
latches state of Txd, which determines speed
setting).
4. Txd must be held for th ≥ 200 ns.
Txd is now enabled as normal Txd input for the lower
bandwidth mode.
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TFDU5102
Vishay Semiconductors
Recommended SMD Pad Layout
The leads of the device should be soldered in the center position of the pads.
7x1=7
0.6 (≤ 0.7)
2.5 (≥ 2.0)
1
8
1
16524
Figure 7. TFDU5102 Baby Face (Universal)
Note: Leads of the device should be at least 0.3 mm within the ends of the pads.
Recommended Solder Profile
10 s max.
@ 230°C
210
2 - 4°C/s
180
150
120
120 - 180 s
90
60
90 s max.
2 - 4°C/s
30
Peak Operating Current ( mA )
600
240
Temperature ( °C )
Current Derating Diagram
0
0
14874
50
100
150 200 250
Time ( s )
300
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8 (11)
400
300
200
Current derating as a function of
the maximum forward current of
IRED. Maximum duty cycle: 25%.
100
0
–40 –20 0
350
Figure 8. Recommended Solder Profile
500
14875
20 40 60 80 100 120 140
Temperature ( °C )
Figure 9. Current Derating Diagram
Document Number 82535
Rev. A1.1, 12-Nov-02
TFDU5102
Vishay Semiconductors
TFDU5102 – Baby Face (Universal) Package (Mechanical Dimensions)
12249
Document Number 82535
Rev. A1.1, 12-Nov-02
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TFDU5102
Vishay Semiconductors
Revision History:
A1.0, 13/10/2000: Txd timing added
A1.1,12/11/2002:
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Eye safety standard statement adapted to latest standard
Document Number 82535
Rev. A1.1, 12-Nov-02
TFDU5102
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82535
Rev. A1.1, 12-Nov-02
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1