TK50P04M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TK50P04M1 High-Efficiency DC-DC Converter Applications Switching Regulator 1.08±0.2 Unit: mm • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 1.14MAX 2.29 0.76 ± 0.12 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V (Note 1) ID 50 Pulsed (Note 1) IDP 150 Drain power dissipation (Tc = 25°C) PD 60 W Single-pulse avalanche energy (Note 2) EAS 65 mJ Avalanche current IAR 50 A Repetitive avalanche energy (Tc=25℃) (Note 3) EAR 4.4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current DC A 2 1 +0.25 −0.12 High forward transfer admittance: |Yfs| = 105 S (typ.) 1.52 Low drain-source ON-resistance: RDS (ON) = 6.7 mΩ (typ.) • 10.0 • 2.3 ± 0.1 Small gate charge: QSW = 9.4 nC (typ.) 0.07 ± 0.07 High-speed switching • 1.01MAX • 0.58MAX 6.1 ± 0.12 +0.4 −0.6 6.6 ± 0.2 5.34 ± 0.13 3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2-7K1A Weight: 0.36 g (typ.) Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-08 TK50P04M1 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 2.08 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Marking (Note 4) TK50P04M Part No. (or abbreviation code) Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: VDD = 32 V, Tch = 25°C (initial), L = 20 μH, RG = 25 Ω, IAR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: * Weekly code: (Four digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last 2 digits of the calendar year) 2 2009-09-08 TK50P04M1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ Vth VDS = 10 V, ID = 0.5 mA 1.3 ⎯ 2.3 VGS = 4.5 V, ID = 25 A ⎯ 7.8 10.2 VGS = 10 V, ID = 25 A ⎯ 6.7 8.7 VDS = 10 V, ID = 25 A 52.5 105 ⎯ ⎯ 2600 ⎯ ⎯ 110 ⎯ ⎯ 420 ⎯ ⎯ 2.5 ⎯ ⎯ 22 ⎯ ⎯ 29 ⎯ ⎯ 10 ⎯ ⎯ 77 ⎯ VDD ≈ 32 V, VGS = 10 V, ID = 50 A ⎯ 38 ⎯ VDD ≈ 32 V, VGS = 5 V, ID = 50 A ⎯ 20 ⎯ ⎯ 8.0 ⎯ ⎯ 5.7 ⎯ ⎯ 9.4 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz tr Turn-on time ton VGS 10 V tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 0V 4.7 Ω Switching time Fall time ID = 25 A VOUT RL = 0.8 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 20 V Duty ≤ 1%, tw = 10 μs VDD ≈ 32 V, VGS = 10 V, ID = 50 A V V mΩ S pF Ω ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 150 A ⎯ ⎯ −1.2 V VDSF IDR = 50 A, VGS = 0 V 3 2009-09-08 TK50P04M1 ID – VDS ID – VDS 4.5 6 8 Drain current ID Drain current 3.2 30 8 80 3.3 (A) 40 Common source 10 Ta = 25°C Pulse test 6 4 4.5 3.7 (A) 10 100 3.5 Common source Ta = 25°C Pulse test ID 50 3.1 20 3 10 3.5 60 3.3 40 3.2 20 3 VGS = 2.8 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1 (V) VGS = 2.8 V 0.8 0.4 Drain-source voltage ID – VGS 40 Ta = −55°C 100 20 25 1 2 3 Gate-source voltage 4 VGS 0.6 25 0.2 12.5 0 0 5 ID = 50 A 0.4 (V) 2 4 Drain-source ON-resistance RDS (ON) (mΩ) (S) |Yfs| Forward transfer admittance Common source VDS = 10 V Pulse test 100 Ta = −55°C 25 100 1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) – ID 100 10 6 Gate-source voltage ⎪Yfs⎪ – ID 0.1 0.1 (V) Common source Ta = 25℃ Pulse test (V) VDS 60 1000 VDS 2 VDS – VGS 80 0 0 1.6 0.8 Common source VDS = 10 V Pulse test Drain-source voltage Drain current ID (A) 100 1.2 10 (A) 4.5 VGS = 10 V 1 1 100 Common source Ta = 25 ℃ Pulse test 10 Drain current 4 100 ID (A) 2009-09-08 TK50P04M1 RDS (ON) – Ta IDR – VDS 20 100 (A) ID = 50 A 12 25 12.5 VGS = 4.5 V 8 ID = 12.5, 25, 50 A VGS = 10 V 4 10 3 IDR 16 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 4.5 1 10 VGS = 0 V Common source Ta = 25°C Pulse test 0 −80 −40 0 40 Ambient temperature 80 120 Ta 1 0 160 −0.2 (°C) −0.4 Drain-source voltage Capacitance – VDS Vth (V) Ciss 1000 Gate threshold voltage (V) Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 80 120 Drain-source voltage 1 0.5 Common source VDS = 10 V ID = 0.5 mA Pulse test 0 −80 100 VDS 1.5 −40 0 40 Ambient temperature (V) Ta 100 20 Common source ID = 50 A Ta = 25°C 16 Pulse test (V) (W) 50 80 VDS PD 40 Drain-source voltage 60 40 20 40 80 Case temperature (°C) Dynamic input/output characteristics PD – Tc 0 0 160 120 Tc VDS (°C) 8 16 10 4 VGS 10 20 Total gate charge 5 12 32 20 0 0 160 VDD = 8 V 30 30 Qg 40 50 (V) 1 2 VGS 10 0.1 2.5 Gate-source voltage (pF) VDS −1.0 Vth – Ta C Capacitance −0.8 3 10000 Drain power dissipation −0.6 0 (nC) 2009-09-08 TK50P04M1 Normalized transient thermal impedance rth (t)/Rth (ch-c) rth /Rth (ch-c) – tw 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 0.05 t SINGLE PULSE T 0.02 Duty = t/T Rth (ch-c) = 2.08 °C/W 0.01 0.01 10μ 100μ 1m 10m Pulse width 100m tw 1 (s) EAS – Tch Safe operating area 100 EAS (mJ) 1000 100 t = 1 ms * ID 10 ms * 10 Avalanche energy (A) ID max (Pulse) * Drain current 10 1 * Single – pulse Ta = 25℃ 0.1 Curves must be derated linearly with increase in temperature. 0.01 0.1 Drain-source voltage 10 VDS 60 40 20 0 25 VDSS max 1 80 50 75 100 Channel temperature (initial) 100 125 Tch 150 (°C) (V) 15 V BVDSS IAR −15 V VDD Test circuit RG = 25 Ω VDD = 32 V, L = 20 μH 6 VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2009-09-08 TK50P04M1 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2009-09-08