TOSHIBA TK15A60U

TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15A60U
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
15
Pulse (t = 1 ms)
(Note 1)
IDP
30
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
81
mJ
Avalanche current
IAR
15
A
Repetitive avalanche energy
EAR
4
mJ
JEITA
Channel temperature
Tch
150
°C
TOSHIBA
Storage temperature range
Tstg
-55 to 150
°C
Weight: 1.7 g (typ.)
DC
Drain current
Note:
(Note 3)
A
1: Gate
2: Drain
3: Source
⎯
JEDEC
SC-67
2-10U1B
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25Ω, IAR = 15 A
1
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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TK15A60U
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
⎯
⎯
±1
μA
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
3.0
⎯
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 7.5 A
⎯
0.24
0.3
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 7.5 A
3.0
8.5
―
S
Input capacitance
Ciss
―
950
―
Reverse transfer capacitance
Crss
―
47
―
Output capacitance
Coss
―
2300
―
⎯
37
⎯
⎯
80
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-ON time
ton
tf
Turn-OFF time
VOUT
RL =
40Ω
50 Ω
Switching time
Fall time
ID = 7.5A
10 V
VGS
0V
tr
VDD ∼
− 300 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
pF
ns
⎯
8
⎯
105
⎯
⎯
17
⎯
⎯
10
⎯
⎯
7
⎯
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
⎯
⎯
⎯
15
A
(Note 1)
IDRP
⎯
⎯
⎯
30
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 15 A, VGS = 0 V
⎯
⎯
-1.7
V
Reverse recovery time
trr
IDR = 15 A, VGS = 0 V,
⎯
530
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
9.0
⎯
μC
Marking
K15A60U
Note 4: A dot marking for identifying the indication of product
Labels.
Part No. (or abbreviation code)
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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TK15A60U
ID – VDS
10
Common source
Tc = 25°C
10
Pulse test
8
8
6.8
4
Drain current
6.5
6.2
6
2
VGS = 5.8 V
0
8.5 Common source
Tc = 25°C
Pulse test
15
(A)
ID
6
0
10
24
15
(A)
ID
Drain current
ID – VDS
30
7
1
2
3
Drain−source voltage
4
VDS
8
18
7.5
12
7
6.3
6
0
5
VGS = 6.2 V
0
(V)
10
20
VDS (V)
Drain−source voltage
ID
Drain current
18
100
12
Tc = −55°C
25
6
2
4
6
Gate−source voltage
8
VGS
6
4
ID = 15A
2
7.5
4
0
(V)
4
8
12
Gate−source voltage
⎪Yfs⎪ − ID
16
VGS
20
(V)
RDS (ON) − ID
10
Common source
VDS = 10 V
Pulse test
Drain−source ON-resistance
RDS (ON) (Ω)
Forward transfer admittance
⎪Yfs⎪ (S)
(V)
Common source
Tc = 25°C
Pulse test
8
0
10
100
Tc = −55°C
10
100
25
1
0.1
0.1
50
VDS – VGS
Common source
VDS = 20 V
Pulse test
0
0
VDS
10
(A)
24
40
Drain−source voltage
ID – VGS
30
30
10
1
Drain current
ID
Common source
Tc = 25°C
Pulse test
1
VGS = 10 V
15
0.1
0.01
1
100
(A)
Drain current
3
100
10
ID
(A)
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TK15A60U
IDR − VDS
RDS (ON) – Tc
7.5
0.6
15
ID = 4 A
0.4
0.2
−40
0
40
80
Case temperature
120
Tc
160
10
10,15
1
5
3
1
0.1
0
200
0.4
(°C)
Vth (V)
Gate threshold voltage
(V)
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Crss
Pulse test
10
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
VDS
3
(V)
−40
0
40
80
120
Case temperature
Tc
50
VDS (V)
(W)
500
PD
40
Drain−source voltage
30
20
10
80
120
Case temperature
200
(°C)
Dynamic input/output
characteristics
PD − Tc
40
160
160
Tc
400
(°C)
VDS
200V
VDD = 100V
300
12
8
VGS
100
4
6
12
Total gate charge
4
400V
200
0
0
200
20
Common source
ID = 15 A
Tc = 25°C
Pulse test
16
18
Qg
(V)
1
4
VGS
Capacitance
C
(pF)
Ciss
Drain−source voltage
Drain power dissipation
VDS
5
1000
0
0
1.2
Vth − Tc
C – VDS
1
0.1
0.8
Drain−source voltage
10000
10
VGS = 0 V
24
Gate−source voltage
0
−80
Common source
Tc = 25°C
Pulse test
(A)
Common source
VGS = 10 V
Pulse test
IDR
0.8
100
Drain reverse current
Drain−source ON-resistance
RDS (ON) (Ω)
1
0
30
(nC)
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TK15A60U
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single pulse
Duty = t/T
Rth (ch-c) = 3.125°C/W
0.001
10μ
100μ
1m
10m
Pulse width
100m
1
tw (s)
EAS – Tch
Safe operating area
100
100
ID max (Pulse) *
ID max (Continuous)
EAS (mJ)
100 μs *
(A)
10
0.1
0.01
DC operation
Tc = 25°C
* Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
Avalanche energy
ID
Drain current
1 ms *
1
10
1
Drain−source voltage
100
VDS
60
40
20
0
25
VDSS max
10
80
50
75
100
Channel temperature (initial)
1000
125
150
Tch (°C)
(V)
15 V
BVDSS
IAR
−15 V
VDD
WAVEFORM
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 0.63mH
5
VDS
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
−
2
⎝ VDSS VDD ⎠
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TK15A60U
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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