2SK3947 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3947 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V (Note 1) ID 6 Pulse (t = 1 ms) (Note 1) IDP 24 Drain power dissipation (Tc = 25°C) PD 40 W JEDEC Single-pulse avalanche energy (Note 2) EAS 345 mJ JEITA Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current 1: Gate 2: Drain 3: Source A ― SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, IAR = 6 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2009-09-29 2SK3947 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA IG = ±10 μA, VGS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cutoff current Drain-source breakdown voltage Min V (BR) GSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 1.1 1.4 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 1.2 5.0 ⎯ S Input capacitance Ciss ⎯ 1050 ⎯ Reverse transfer capacitance Crss ⎯ 10 ⎯ Output capacitance Coss ⎯ 110 ⎯ VOUT ⎯ 20 ⎯ RL = 66 Ω ⎯ 40 ⎯ ⎯ 35 ⎯ ⎯ 130 ⎯ ⎯ 28 ⎯ ⎯ 16 ⎯ ⎯ 12 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 3 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 24 A (Note 1) Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 6 A, VGS = 0 V, ⎯ 140 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 0.3 ⎯ μC Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K3947 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3947 ID – VDS 5 Common source Ta = 25°C Pulse test 10 6 (A) (A) ID Drain current 3 4.8 2 4.6 4.4 1 6 4 2 4 6 Drain-source voltage 8 VDS 4.8 4.6 4.4 VGS = 4 V 0 5 2 4.2 0 0 10 0 (V) 10 20 (V) 2 2 4 6 Gate-source voltage 8 VGS 8 ID = 6 A 6 4 3 2 0 10 1.5 0 (V) 4 8 VGS 20 (V) Common source Ta = 25°C Pulse test 100 Drain-source ON-resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) Ta = −55°C 25 1 0.1 0. 1 16 RDS (ON) – ID 10 Common source VDS = 20 V Pulse test 12 Gate-source voltage |Yfs| – ID 10 (V) Common source Ta = 25°C Pulse test VDS Drain-source voltage ID (A) Drain current 25 4 0 50 VDS – VGS 6 100 40 VDS 10 Ta = −55°C 0 30 Drain-source voltage Common source VDS = 10 V Pulse test 8 4.2 VGS = 4 V ID – VGS 10 Common source Ta = 25°C Pulse test 6 8 5 ID 4 10 15 Drain current 15 ID – VDS 10 1 VGS = 10,15 V 1 0.1 0.1 10 Drain current ID (A) 1 10 Drain current ID (A) 3 2009-09-29 2SK3947 RDS (ON) − Ta 5 10 Drain reverse current IDR (A) Common source Pulse test VGS = 10V 4 Drain-source ON-resistance RDS (ON) ( Ω) IDR − VDS 3 ID = 6A 2 3 1.5 1 Common source Ta = 25°C Pulse test 1 5 10 3 1 0 −80 −40 0 40 80 120 0.1 160 0 0.4 Ambient temperature Ta (°C) 0.8 1.2 2.0 1.6 Drain-source voltage VDS (V) Vth − Ta Capacitance – VDS 10000 VGS = 0, −1 V 4 Gate threshold voltage Vth (V) Coss 100 Common source Crss VGS = 0 V 2 1 f = 1 MHz Ta = 25°C 1 0.1 1 10 Drain-source voltage 0 −80 100 VDS (V) Common source VDS = 10 V ID = 1 mA Pulse test −40 0 40 80 120 160 Ambient temperature Ta (°C) Dynamic input / output characteristics PD – Tc 50 500 VDS 40 Drain-source voltage Drain power dissipation PD (W) (V) 20 30 20 10 400 16 VDS VDD = 100 V 200 300 12 400 200 8 Common source ID = 6 A VGS 100 4 Tc = 25°C VGS (V) 10 3 Gate-source voltage Capacitance C (pF) Ciss 1000 Pulse test 0 0 40 80 120 160 0 200 Case temperature Tc (°C) 0 10 20 30 40 50 0 Total gate charge Qg (nC) 4 2009-09-29 2SK3947 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t Single pulse 0.01 T 0.01 Duty = t/T Rth (ch-c) = 3.125°C/W 0.001 10μ 100μ 1ｍ 10ｍ Pulse width 100ｍ tw 1 10 (s) Safe operating area EAS – Tch 100 500 ID max (pulsed) * 400 (A) ID max (continuous) * 1 ms * ID Drain current Avalanche energy EAS (mJ) 100 μs * 10 DC operation Ta = 25°C 1 300 200 100 * Single nonrepetitive pulse 0.1 Ta = 25℃ 0 25 Curves must be derated linearly with increase in temperature 10 100 75 100 125 150 Channel temperature (initial) Tch (°C) VDSS max 0.01 1 50 1000 Drain – Source Voltage VDS (V) BVDSS 15 V IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 16.8 mH 5 Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK3947 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29