2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4015 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.60 Ω (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V (Note 1) ID 10 Pulse (t = 1 ms) (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 45 W Single-pulse avalanche energy (Note 2) EAS 363 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 1.7 g (typ.) Storage temperature range Tstg -55 to 150 °C DC Drain current A 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 2-10U1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2009-09-29 2SK4015 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cutoff current Drain-source breakdown voltage Min V (BR) GSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 5 A ⎯ 0.60 0.86 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 5 A 3.7 7.4 ⎯ S Input capacitance Ciss ⎯ 1500 ⎯ Reverse transfer capacitance Crss ⎯ 15 ⎯ Output capacitance Coss ⎯ 180 ⎯ VOUT ⎯ 22 ⎯ RL = 40 Ω ⎯ 50 ⎯ ⎯ 36 ⎯ ⎯ 180 ⎯ ⎯ 42 ⎯ ⎯ 23 ⎯ ⎯ 19 ⎯ Min Typ. Max Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 5 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 200 V Duty ≤ 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 10 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 10 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 40 A (Note 1) Forward voltage (diode) VDSF IDR = 10 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 10 A, VGS = 0 V, ⎯ 170 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 0.6 ⎯ μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K4015 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4015 ID – VDS COMMON SOURCE Tc = 25°C PULSE TEST 8 ID – VDS 20 10 10 6.3 8 7 8 7 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 10 6 6 5.7 4 5.4 2 VGS = 5 V 16 COMMON SOURCE Tc = 25°C PULSE TEST 6.8 6.6 12 6.3 8 6 5.7 4 5.4 VGS = 5 V 0 0 0 2 4 6 8 10 0 DRAIN−SOURCE VOLTAGE VDS (V) 10 20 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 25 8 100 4 0 2 COMMON SOURCE Tc = 25℃ PULSE TEST Tc = −55°C 12 0 4 6 8 GATE−SOURCE VOLTAGE VGS 8 4 5 2 2 0 10 ID = 10 A 6 0 (V) 4 8 10 COMMON SOURCE VDS = 10 V PULSE TEST Tc = −55°C 25 100 1 0.1 0. 1 1 16 20 (V) RDS (ON) – ID DRAIN−SOURCE ON-RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 10 12 GATE−SOURCE VOLTAGE VGS |Yfs| – ID 100 50 VDS – VGS 10 COMMON SOURCE VDS = 10 V PULSE TEST 40 DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 16 30 10 1 VGS = 10 V 0.1 0.1 100 DRAIN CURRENT ID (A) COMMON SOURCE Tc = 25°C PULSE TEST 1 10 100 DRAIN CURRENT ID (A) 3 2009-09-29 2SK4015 RDS (ON) − Tc IDR − VDS 100 COMMON SOURCE VGS = 10 V PULSE TEST ID = 10 A 1.2 2 5 0.8 0.4 −40 0 40 80 CASE TEMPERATURE 120 160 10 0.1 10 5 1 Tc (°C) VGS = 0 V 1 3 0 0.4 0.8 C − VDS Vth (V) Ciss GATE THRESHOLD VOLTAGE (pF) CAPACITANCE C 5 1000 100 Coss 1 0.1 Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 10 4 3 2 1 0 −80 100 COMMON SOURCE VDS = 10 V ID = 1 mA −40 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN−SOURCE VOLTAGE VDS (V) PD (W) DRAIN POWER DISSIPATION 600 40 30 20 10 80 120 CASE TEMPERATURE 40 80 120 160 Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 40 0 CASE TEMPERATURE PD − Tc 0 0 1.6 Vth − Tc 10000 10 1.2 DRAIN−SOURCE VOLTAGE VDS (V) 160 500 400 Tc (°C) VDS 12.5 VDD = 100 V 200 V 400 V 300 10 7.5 VGS 200 5 100 2.5 0 0 200 15 COMMON SOURCE ID = 10 A Tc = 25°C PULSE TEST (V) 0 −80 COMMON SOURCE Tc = 25°C PULSE TEST 20 40 60 GATE−SOURCE VOLTAGE VGS 1.6 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON-RESISTANCE RDS (ON) (Ω) 2.0 0 80 TOTAL GATE CHARGE Qg (nC) 4 2009-09-29 2SK4015 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty = 0.5 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 0.001 10μ SINGLE PULSE 100μ 1ｍ Duty = t/T Rth (ch-c) = 2.78°C/W 10ｍ PULSE WIDTH 100ｍ 1 10 tw (s) SAFE OPERATING AREA EAS – Tch 100 500 ID max (PULSED) * 10 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 μs * ID max (CONTINUOUS) * 1 ms * 1 0.1 DC OPERATION Tc = 25°C Tc = 25°C TEMPERATURE. 10 200 100 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) CURVES MUST BE DERATED 0.01 1 300 0 25 * SINGLE NONREPETITIVE PULSE LINEARLY WITH INCREASE IN 400 VDSS max 100 DRAIN-SOURCE VOLTAGE 15 V 1000 VDS (V) BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 6.36 mH 5 VDS WAVEFORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK4015 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29