Inchange Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1193 ・High speed switching APPLICATIONS ・For medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 120 VCEO Collector-emitter voltage Open base 120 VEBO Emitter-base voltage Open collector IC V 7 V Collector current (DC) 8 A ICM Collector current-Peak 12 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=2A , L=10mH V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V VBEsat-1 Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V ICBO Collector cut-off current VCB=120V ;IE=0 100 μA ICEO Collector cut-off current VCE=100V ;IB=0 10 μA hFE DC current gain IC=4A ; VCE=3V Transition frequency IC=0.5A ; VCE=10V,f=1MHz fT CONDITIONS MIN TYP. MAX UNIT 120 V 7 V 1000 20000 20 MHz 0.7 μs 6.0 μs 2.0 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=4A ;IB1=8mA IB2=-8mA; VCC=50V 2 Inchange Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3