ISC 2SC2612

Inchange Semiconductor
Product Specification
2SC2612
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High collector breakdown voltage
: VCEO=400V(Min)
APPLICATIONS
・For high voltage ,high speed and
high power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-Peak
6
A
IB
Base current
1.5
A
PT
Total power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2612
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ,RBE=∞,L=100mH
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.3A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
100
μA
ICEO
Collector cut-off current
VCE=350V; RBE=∞
100
μA
hFE-1
DC current gain
IC=1.5A ; VCE=5V
15
hFE-2
DC current gain
IC=3A ; VCE=5V
7
1.0
μs
2.5
μs
1.0
μs
400
V
7
V
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3.0A IB1=- IB2=0.6A
VCC≈150V
Fall time
2
1.2
Inchange Semiconductor
Product Specification
2SC2612
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SC2612
Silicon NPN Power Transistors
4