Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 1.5 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=∞,L=100mH V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA ICEO Collector cut-off current VCE=350V; RBE=∞ 100 μA hFE-1 DC current gain IC=1.5A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 7 1.0 μs 2.5 μs 1.0 μs 400 V 7 V Switching times ton Turn-on time tstg Storage time tf IC=3.0A IB1=- IB2=0.6A VCC≈150V Fall time 2 1.2 Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors 4