2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 µs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.4 A PC 500 Collector power dissipation PC 1000 (Note 1) Junction temperature Storage temperature range JEDEC mW Tj 150 °C Tstg −55 to 150 °C ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2 Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2873 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 µA V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V VCE = 2 V, IC = 0.5 A 70 ― 240 hFE (2) VCE = 2 V, IC = 2.0 A 20 ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V fT VCE = 2 V, IC = 0.5 A ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 30 ― pF ― 0.1 ― ― 1.0 ― ― 0.1 ― hFE (1) DC current gain (Note 2) Transition frequency Collector output capacitance Turn-on time Storage time Switching time Cob ton tstg 20 µs INPUT IB1 IB1 IB2 OUTPUT ― 30 Ω Collector-emitter breakdown voltage µs IB2 Fall time Note 2: hFE (1) classification tf IB1 = −IB2 = 0.05 A, DUTY CYCLE ≤ 1% O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) M Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2873 VCE – IC VCE – IC 1.6 Common emitter VCE VCE Ta = 100°C IB = 3 mA 5 10 Collector-emitter voltage Collector-emitter voltage 1.2 0.8 20 30 0.4 40 50 0 0 0.4 0.8 1.2 Collector current IC 1.6 (A) Common emitter (V) (V) 1.6 Ta = 25°C 1.2 0.8 IB = 5 mA 30 40 0.4 2.0 1.2 2.0 (A) hFE – IC Common emitter Common emitter hFE 10 20 DC current gain 1.2 0.8 IB = 5 mA 30 0.4 VCE = 2 V 500 Ta = −55°C 300 Ta = 100°C 25 100 −55 50 30 40 10 10 50 0.4 0.8 1.2 Collector current IC 1.6 30 100 300 Collector current 2.0 1000 3000 IC (mA) (A) VCE (sat) – IC VBE (sat) – IC 1 10 Common emitter Common emitter Base-emitter saturation voltage VBE (sat) (V) IC/IB = 20 0.5 0.3 0.1 Ta = 100°C 0.05 0.03 25 −55 0.01 10 1.6 1000 (V) VCE Collector-emitter voltage 0.8 Collector current IC VCE – IC Collector-emitter saturation voltage VCE (sat) (V) 20 0.4 0 0 1.6 0 0 10 30 100 Collector current 300 1000 3 IC (mA) Ta = −55°C 1 0.5 25 100 0.3 0.1 10 3000 IC/IB = 20 5 30 100 Collector current 3 300 1000 3000 IC (mA) 2004-07-07 2SC2873 IC – VBE Safe Operating Area 2.0 5000 IC max (pulse)* IC max (continuous) 3000 Common emitter (mA) 1.5 Ta = 100°C 25 −55 Collector current IC Collector current IC (A) VCE = 2 V 1.0 0.5 1 ms* 10 ms* 100 ms* 1000 1 S* 500 300 DC operation Ta = 25°C 100 50 30 *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly 0 0 0.4 0.8 1.2 Base-emitter voltage 1.6 VBE 10 2.0 with increase in temperature Tested without a substrate 5 0.1 (V) 0.3 1 3 Collector-emitter voltage VCEO max 10 VCE 30 100 (V) PC – Ta Collector power dissipation PC (W) 1.2 1.0 (1) Mounted on a ceramic (1) substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 Ambient temperature Ta 120 140 160 (°C) 4 2004-07-07 2SC2873 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07