2SK3650-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 150 120 ±33 ±132 ±30 33 169 20 5 1.67 150 +150 -55 to +150 *1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph < DSS, Tch=150°C < *4 VDS < *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV =150V Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C < *2 Tch=150°C *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V Tch=25°C Tch=125°C VDS=120V VGS=0V VGS=±30V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=11.5A VGS=10V Min. 150 3.0 10 54 16 1150 200 17 13 15 34 15 34 9 12.5 8 RGS=10 Ω V CC =48V ID=23A VGS=10V L=228µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. 5.0 25 250 100 70 1730 300 26 20 23 51 23 51 13.5 19 33 1.10 130 0.6 1.65 Units V V µA nA mΩ S pF ns nC A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.833 75.0 Units °C/W °C/W 1 2SK3650-01L,S,SJ FUJI POWER MOSFET Characteristics 200 Typical Output Characteristics Allowable Power Dissipation PD=f(Tc) 50 ID=f(VDS):80µs Pulse test,Tch=25°C 20V 10V 8V 175 7.5V 40 150 7.0V ID [A] PD [W] 125 100 30 6.5V 20 75 6.0V 50 10 VGS=5.5V 25 0 0 0 25 50 75 100 125 0 150 1 2 3 Tc [°C] Typical Transfer Characteristic 5 6 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 4 VDS [V] 100 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 200 0.30 VGS= 5.5V 6.0V 7.0V 6.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 180 7.5V 0.25 160 RDS(on) [ m Ω ] RDS(on) [ Ω ] 100 ID [A] 0.20 0.15 140 120 100 max. 80 typ. 0.10 8V 60 10V 40 0.05 20V 20 0 0.00 0 5 10 15 20 25 ID [A] 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3650-01L,S,SJ 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Typical Gate Charge Characteristics VGS=f(Qg):ID=23A, Tch=25°C 14 6.5 6.0 Vcc= 36V 12 5.5 max. 48V 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 72V 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 Tch [°C] 30 35 40 45 50 Typical Forward Characteristics of Reverse Diode Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 25 Qg [C] IF=f(VSD):80µs Pulse test,Tch=25°C 100 Ciss 10 IF [A] C [F] 1n Coss 1 100p Crss 10p -1 10 0 1 10 10 0.1 0.00 2 10 0.25 0.50 0.75 VDS [V] 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID 3 1.00 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 500 10 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=14A 400 2 10 EAS [mJ] t [ns] IAS=20A 300 td(off) tf td(on) 200 IAS=33A 1 10 tr 100 0 10 10 0 -1 0 10 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3650-01L,S,SJ 2 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 -7 10 10 -6 -5 10 -4 10 10 -3 -2 10 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(S) Type(L) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4