2SK3913-01MR FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Peak diode recovery -di/dt Max. power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 250 220 14 ±56 ±30 14 EAS 301.1 dV DS /dt dV/dt -di/dt PD 3.7 20 5 100 2.16 37 +150 -55 to +150 2 Unit V V A A V A Remarks VGS=-30V Note *1 mJ Note *2 mJ kV/μs kV/μs A/μs W W °C °C kVrms Note *3 VDS < = 250V Note *4 Note *5 Equivalent circuit schematic Drain(D) Ta=25°C Tc=25°C Operating and storage Tch temperature range Tstg t=60sec, f=60Hz Isolation voltage VISO *6 < Note *1 Tch =150°C Note *2 Starting Tch=25°C, IAS=6A, L=14.1mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF < = -ID, -di/dt=100A/μs, Vcc < BVDSS, Tch < = 150°C Note *5 IF -ID, -di/dt=100A/μs, Vcc < = BVDSS, Tch < = 150°C Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS Tch=25°C VDS=250V VGS=0V Tch=125°C VDS=200V VGS=0V VGS=±30V VDS=0V ID=7A VGS=10V ID=7A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=7A VGS=10V 250 3.0 5 RGS=10 Ω VCC =125V ID=14A VGS=10V IF=14A VGS=0V Tch=25°C IF=14A VGS=0V -di/dt=100A/μs Tch=25°C 220 10 780 90 6 12 3 23 6 22 7 6 1.00 120 0.5 5.0 25 2.0 100 280 1170 135 9 18 4.5 35 9 33 11 9 1.50 250 1.25 V V μA mA nA mΩ S pF ns nC V ns μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.378 58.0 Units °C/W °C/W 1 2SK3913-01MR FUJI POWER MOSFET Characteristics 40 Allowable Power Dissipation PD=f(Tc) 35 35 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 30 20V 10V 30 25 8V ID [A] PD [W] 25 20 20 15 7V 10 6.5V 15 10 5 5 0 0 25 50 75 100 125 0 150 VGS=6V 0 2 4 6 8 10 12 14 16 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 10 gfs [S] ID[A] 10 1 1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C 0.9 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 0.7 7.0V VGS=6.5V 0.8 RDS(on) [ Ω ] 0.8 7.5V 0.6 8V 0.7 0.6 RDS(on) [ Ω ] 1.0 100 ID [A] 10V 20V 0.5 0.4 0.5 max. 0.4 0.3 typ. 0.3 0.2 0.2 0.1 0.1 0.0 0 5 10 15 20 ID [A] 25 30 35 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3913-01MR 7 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 24 20 Vcc= 50V 250V max. 5 200V 16 4 VGS [V] VGS(th) [V] 6 Typical Gate Charge Characteristics VGS=f(Qg):ID=14A,Tch=25 °C min. 3 12 8 2 4 1 0 -50 -25 0 25 50 75 100 125 0 150 0 10 20 30 Tch [°C] 10n 40 50 60 70 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 1n Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Ciss IF [A] C [F] 10 100p Coss 1 10p Crss 1p -1 10 10 0 10 1 10 2 0.1 0.00 3 10 0.25 0.50 VDS [V] 3 10 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω 350 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A 300 tf IAS=5.6A 250 2 EAV [mJ] 10 t [ns] td(off) td(on) 200 IAS=8.4A 150 1 10 tr 50 0 0 10 IAS=14A 100 -1 10 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3913-01MR 2 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -2 10 10 -3 10 -2 -1 10 tAV [sec] 1 10 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 10 -5 10 -4 10 -3 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4