2SK3915-01MR FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof TO-220F Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 450 450 6 ±24 ±30 6 Unit V V A A V A 320 mJ Note *2 mJ kV/μs kV/μs W W °C °C kVrms Note *3 VDS < = 450V Note *4 EAS dV DS /dt dV/dt PD Tch Tstg VISO *6 3.2 20 5 2.16 32 +150 -55 to +150 2 Remarks VGS=-30V Note *1 Equivalent circuit schematic Ta=25°C Tc=25°C Drain(D) Gate(G) Source(S) t=60sec, f=60Hz Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=6A, L=102mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF< = -ID, -di/dt=50A/μs, Vcc < = 150°C = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS Tch=25°C VDS=450V VGS=0V Tch=125°C VDS=360V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V 450 3.0 2.5 RGS=10 Ω VCC =225V ID=6A VGS=10V IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/μs Tch=25°C 5.0 25 2.0 100 1.20 0.98 5 440 67 2.8 12 6.5 25 5.5 15.5 6.8 3.7 1.00 300 2.0 660 100 4.5 18 10 38 8.5 23.5 10.5 5.5 1.50 Typ. Max. V V μA mA nA Ω S pF ns nC V ns μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. 3.906 58.0 Units °C/W °C/W 1 2SK3915-01MR FUJI POWER MOSFET Characteristics 50 Allowable Power Dissipation PD=f(Tc) 12 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 20V 10V 8.0V 10 40 7.0V 8 ID [A] PD [W] 30 6 6.5V 20 4 6.0V 10 2 VGS=5.5V 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 10 ID[A] 10 gfs [S] 1 1 0.1 0.01 3.0 0.1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0.1 8.0 1 VGS[V] 3.0 2.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C VGS=5.5V 6.0V 10 ID [A] 6.5V 3.5 7.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 3.0 RDS(on) [ Ω ] 8V 10V 20V 1.5 RDS(on) [ Ω ] 2.5 2.0 2.0 max. 1.5 typ. 1.0 1.0 0.5 0.0 0.5 0 2 4 6 ID [A] 8 10 12 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3915-01MR 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 20 6.5 Typical Gate Charge Characteristics VGS=f(Qg):ID=3A,Tch=25°C 18 6.0 16 max. 5.0 14 4.5 Vcc= 90V 12 4.0 VGS [V] VGS(th) [V] 5.5 3.5 min. 3.0 225V 360V 10 8 2.5 2.0 6 1.5 4 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 Tch [°C] 10n 15 20 25 30 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C 1n 10 IF [A] C [F] Ciss 100p Coss 1 10p Crss 1p -1 10 0 1 10 2 10 10 0.1 0.00 3 10 0.25 0.50 0.75 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 500 1.25 1.50 1.75 2.00 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V 400 tf 2 10 1.00 VSD [V] IAS=2.4A 1 10 300 EAS [mJ] t [ns] td(off) td(on) IAS=3.6A 200 IAS=6A tr 100 0 10 0 -1 10 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3915-01MR 2 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V 1 10 Single Pulse 0 10 -1 10 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 -2 10 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 o Zth(ch-c) [ C/W] 10 10 -1 10 -2 10 -3 -6 10 -5 10 -4 10 -3 10 10 -2 -1 10 0 10 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4