2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation dVDS /dt dV/dt PD Operating and Storage Temperature range Isolation Voltage Tch Tstg VISO Ratings 700 700 17 ±68 ±30 Unit V V A A V Remarks VGS=-30V Drain(D) Note *1 IAS 17 A IAR EAS 8.5 989 A mJ Note *2 EAR 17.0 mJ Note *3 40 5 170 3.13 +150 -55 to +150 2 Gate(G) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *1:Tch< = 150°C Note *2:StartingTch=25°C,IAS=6.8A,L=37.7mH, VCC=100V,RG=50Ω kV/µs VDS < = 700V EAS limited by maximum channel temperature kV/µs Note *4 and Avalanche current. Tc=25°C W See to the ‘Avalanche Energy’ graph Ta=25°C Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. °C See to the ‘Transient Thermal impedance’ °C graph. kVrms t=60sec f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Turn-Off Time toff Equivalent circuit schematic < < Note *4:IF< = -ID, -di/dt=50A/µs,VCC= BVDSS, Tch= 150°C Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =700V VGS=0V Tch=125°C VDS =560V VGS=0V VGS=±30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=8.5A VGS=10V RGS=10 Ω V CC=350V ID=17A VGS=10V IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C Min. Typ. 700 3.0 Max. Units 5.0 25 250 100 0.60 0.47 6.0 12 1750 2625 250 375 13 19.5 20 30 16 24 60 90 20 30 46 69 14 21 17 26 1.10 1.50 4 25 V V µA nA Ω S pF ns nC V µs µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. Units 0.735 40.0 °C/W °C/W 1 2SK3891-01R FUJI POWER MOSFET Characteristics 250 Allowable Power Dissipation PD=f(Tc) 30 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25 °C 20V 10V 8.0V 25 200 6.5V 20 ID [A] PD [W] 150 15 6.0V 100 10 50 5 0 VGS=5.5V 0 0 25 50 75 100 125 150 0 4 8 Typical Transfer Characteristic ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 100 12 16 20 VDS [V] Tc [°C] 100 10 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C VGS=5.5V 100 ID [A] VGS[V] 2.00 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V 6.0V 1.75 1.2 RDS(on) [ Ω ] RDS(on) [ Ω ] 1.50 1.0 0.8 1.25 1.00 max. 0.75 6.5V 8.0V 10V typ. 0.50 20V 0.6 0.25 0.4 0.00 0 5 10 15 ID [A] 20 25 30 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3891-01R 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25 °C 6.5 6.0 12 5.5 max. Vcc= 140V 350V 560V 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 min. 3.0 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 0 150 10 20 30 Tch [°C] 10 4 10 3 40 50 60 70 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C Ciss 10 2 10 1 IF [A] C [pF] 10 Coss 1 Crss 10 0 10 -1 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 VDS [V] 10 3 0.75 1.00 1.25 1.50 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10Ω 1200 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V IAS=6.8A 1000 tf 2 800 EAV [mJ] td(off) t [ns] 10 td(on) 10 1 IAS=10.2A 600 IAS=17A 400 tr 200 10 0 10 0 -1 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3891-01R FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=100V 18 16 14 Non-Repetitive (Single Pulse) 12 IAV [A] 10 Repetitive 8 6 4 2 0 0 25 50 75 100 125 150 175 200 starting Tch [°C] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 °C,Vcc=100V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 t [sec] 10 -2 10 -1 10 0 http://www.fujielectric.co.jp/fdt/scd/ 4