MIG75J6CSB1W TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG75J6CSB1W (600V/75A 6in1) High Power Switching Applications Motor Control Applications · Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. · The electrodes are isolated from case. · Low thermal resistance · VCE (sat) = 1.8 V (typ.) · UL recognized: File No. E87989 Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN VD GND FO IN VD GND FO IN VD GND GND IN FO VD GND IN FO VD GND IN FO VD GND GND GND GND GND GND VS OUT VS OUT W VS OUT V VS OUT U VS OUT B VS OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2002-08-26 MIG75J6CSB1W Package Dimensions: TOSHIBA 2-108G1D 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2002-08-26 MIG75J6CSB1W Signal Terminal Layout 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2002-08-26 MIG75J6CSB1W Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Supply voltage Symbol Ratings Unit P-N power terminal VCC 450 V ¾ VCES 600 V IC 75 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 75 A Collector power dissipation Tc = 25°C, DC PC 460 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND Terminal VD 20 V Input voltage IN-GND Terminal VIN 20 V Fault output voltage FO-GND Terminal VFO 20 V Fault output current FO sink current IFO 14 mA Control Module Operating temperature ¾ Tc -20 to +100 °C Storage temperature range ¾ Tstg -40 to +125 °C VISO 2500 V Isolation voltage AC 1 min Screw torque (terminal) M4 ¾ 2 N･m Screw torque (mounting) M5 ¾ 3 N･m Electrical Characteristics 1. Inverter Stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 600 V VD = 15 V IC = 75 A VIN = 15 V ® 0 V Min Typ. Max Tj = 25°C ¾ ¾ 1 Tj = 125°C ¾ ¾ 10 Tj = 25°C 1.5 1.8 2.2 Tj = 125°C ¾ 2.0 ¾ ¾ 1.8 2.2 ¾ 1.3 2.2 ¾ 0.25 ¾ ¾ 0.2 ¾ ¾ 1.1 2.1 ¾ 0.2 ¾ IF = 75 A, Tj = 25°C ton tc (on) Switching time trr VCC = 300 V, IC = 75 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load toff (Note 1) tc (off) Unit mA V V ms Note 1: Switching time test circuit and timing chart 4 2002-08-26 MIG75J6CSB1W 2. Control Stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Test Condition VD = 15 V VD = 15 V Min Typ. Max Unit ¾ 13 17 ¾ 39 51 1.4 1.6 1.8 V 2.2 2.5 2.8 V ¾ 10 12 ¾ ¾ 0.1 mA Protection IFO (on) Normal IFO (off) Over current protection trip level Inverter OC VD = 15 V, Tj < = 125°C 120 ¾ ¾ A Short circuit protection trip level Inverter SC VD = 15 V, Tj < = 125°C 120 ¾ ¾ A ¾ 5 ¾ ms 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit Inverter IGBT ¾ ¾ 0.270 Inverter FRD ¾ ¾ 0.313 Compound is applied ¾ 0.017 ¾ Fault output current Over current cut-off time Over temperature protection Control supply under voltage protection toff (OC) Trip level VD = 15 V VD = 15 V OT Case temperature Reset level OTr Trip level UV Reset level UVr Fault output pulse width tFO ¾ VD = 15 V mA °C V 3. Thermal Resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2002-08-26 MIG75J6CSB1W Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 10 mF 15 V GND GND U (V, W) VCC VD IF = 16 mA 0.1 mF 15 kW OUT IN PG VS 10 mF 15 V GND N GND Timing Chart Input Pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% 10% 10% 20% Irr trr 10% tc (on) tc (off) ton toff 6 2002-08-26 MIG75J6CSB1W 4. Recommended conditions for application Characteristics Symbol VCC Supply voltage Test Condition P-N Power terminal Min Typ. Max Unit ¾ 300 400 V 13.5 15 16.5 V Control supply voltage VD VD-GND Signal terminal Carrier frequency fc PWM Control ¾ ¾ 20 kHz Switching time test circuit (see page.6) (Note 2) 3 ¾ ¾ ms tdead Dead time Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2002-08-26 MIG75J6CSB1W IC – VCE IC – VCE 150 150 VD = 17 V 13 V 125 125 (A) 15 V (A) IC 100 Collector current IC Collector current VD = 17 V 13 V 75 50 25 15 V 100 75 50 25 Common emitter Common emitter Tj = 25°C 0 0 1 2 3 Collector-emitter voltage Tj = 125°C 0 0 4 VCE (V) 1 2 3 Collector-emitter voltage Switching time – IC 4 VCE (V) Switching time – IC 10 10 5 5 3 3 (ms) 1 tc (on) tc (off) Switching time Switching time (ms) ton ton toff 0.5 0.3 0.1 Tj = 25°C 0.05 0.01 0 20 40 60 Collector current IC 80 0.5 tc (on) 0.3 tc (off) 0.1 Tj = 125°C 0.05 VCC = 300 V VD = 15 V L-Load 0.03 toff 1 VCC = 300 V VD = 15 V L-Load 0.03 0.01 0 100 20 (A) 40 Collector current IF – VF IC 100 (A) Peak reverse recovery current Irr (A) Peak reverse recovery time trr (´10 ns) 100 (A) 125 Forward current IF 80 trr, Irr – IF 150 100 75 50 Common cathode :Tj = 25°C :Tj = 125°C 25 0 0 60 1 2 Forward voltage 3 VF Irr 10 (V) Common cathode 3 :Tj = 25°C :Tj = 125°C 1 0 4 trr 30 20 40 60 Forward current 8 80 IF 100 (A) 2002-08-26 MIG75J6CSB1W OC – TC 100 VD = 15 V 0 0 25 50 75 100 Case temperature TC 125 (mA) Over current protection trip level OC (A) Inverter stage 200 30 High side control circuit current ID (H) ID (H) – fc 300 25 150 20 15 10 5 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency fc (mA) ID (L) – fc 20 25 (kHz) Reverse bias SOA 100 140 90 OC 120 (A) 80 100 IC 70 60 Collector current Low side control circuit current ID (L) 15 50 40 30 80 60 40 20 VD = 15 V Tj = 25°C 10 0 0 5 10 15 20 Carrier frequency fc 20 0 0 25 (kHz) Tj < = 125°C VD = 15 V 100 400 500 Collector-emitter voltage VCE 200 300 600 700 (V) (°C/W) Rth (t) – tw Inverter stage 1 Tc = 25°C 0.5 Diode Transient thermal resistance Rth (t) 0.3 Transisto 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 9 2002-08-26 MIG75J6CSB1W Turn off loss – IC 5 5 3 3 (mJ) 10 Eoff 1 0.5 0.3 Turn off loss Turn on loss Eon (mJ) Turn on loss – IC 10 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 20 40 Collector current 60 IC 80 1 0.5 0.3 0.1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25°C : Tj = 125°C 0.05 0.03 0.01 0 100 (A) 20 40 Collector current 10 60 IC 80 100 (A) 2002-08-26 MIG75J6CSB1W RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2002-08-26