MITSUBISHI MIG400Q2CMB1X

MIG400Q2CMB1X
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG400Q2CMB1X (1200V/400A 2in1)
High Power Switching Applications
Motor Control Applications
•
Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit
current, overcurrent, undervoltage and overtemperature) into a single package.
•
The electrodes are isolated from the case.
•
Low thermal resistance
•
VCE (sat) = 2.4 V (typ.)
•
UL recognized: File No.E87989
•
Weight: 380 g (typ.)
Equivalent Circuit
1
2
3
4
5
6
7
8
FO GND IN VD
FO GND IN VD
GND VS
GND VS
OUT
OUT
E2
C1
C2/E1
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG400Q2CMB1X
Package Dimensions
Unit: mm
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG400Q2CMB1X
Signal Terminal Layout
Unit: mm
1.
FO (L)
2.
GND (L)
3.
IN (L)
4.
VD (L)
5.
FO (H)
6.
GND (H)
7.
IN (H)
8.
VD (H)
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MIG400Q2CMB1X
Maximum Ratings (Tj = 25°C)
Stage
Characteristics
Condition
Supply voltage
Symbol
Rating
Unit
P-N power terminal
VCC
900
V
⎯
VCES
1200
V
Collector-emitter voltage
Inverter
Collector current
Tc = 25°C, DC
IC
400
A
Forward current
Tc = 25°C, DC
IF
400
A
Collector power dissipation
Tc = 25°C
PC
3780
W
⎯
Junction temperature
Control
Module
Tj
150
°C
Control supply voltage
VD-GND terminal
VD
20
V
Input voltage
IN-GND terminal
VIN
20
V
Fault output voltage
FO-GND terminal
VFO
20
V
Fault output current
FO sink current
IFO
10
mA
Operating temperature
⎯
Tc
−20~+100
°C
Storage temperature
⎯
Tstg
−40~+125
°C
Isolation voltage
AC 1 min
VISO
2500
V
Screw torque (terminal)
M6
⎯
3
N・m
Screw torque (mounting)
M5
⎯
3
N・m
Electrical Characteristics
1. Inverter stage
Characteristics
Collector cut-off current
Collector-emitter saturation voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
Test Condition
VCE = 1200 V
VD = 15 V
IC = 400 A
VIN = 15 V → 0 V
Min
Typ.
Max
Tj = 25°C
⎯
⎯
1
Tj = 125°C
⎯
⎯
10
Tj = 25°C
⎯
2.4
2.8
Tj = 125°C
⎯
2.8
⎯
⎯
2.4
2.8
⎯
2.0
3.0
IF = 400 A, Tj = 25°C
ton
tc (on)
Switching time
trr
toff
tc (off)
VCC = 600 V, IC = 400 A
VD = 15 V, VIN = 15 V ↔ 0 V
Tj = 25°C, Inductive load
(Note 1)
⎯
0.5
⎯
⎯
0.3
⎯
⎯
1.6
2.5
⎯
0.3
⎯
Unit
mA
V
V
µs
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25°C)
Characteristics
Control circuit current
Symbol
High side
ID (H)
Low side
ID (L)
Input on signal voltage
VIN (on)
Input off signal voltage
VIN (off)
Protection
IFO (on)
Normal
IFO (off)
Fault output current
Overcurrent protection trip level
Short-circuit protection trip level
Overcurrent cut-off time
Overtemperature
protection
Control supply under
voltage protection
VD = 15 V
VD = 15 V
VD = 15 V
Min
Typ.
Max
⎯
13
17
⎯
13
17
1.4
1.6
1.8
2.2
2.5
2.8
8
10
12
⎯
⎯
0.1
⎯
Unit
mA
V
mA
OC
VD = 15 V, Tj <
= 125°C
640
⎯
SC
VD = 15 V, Tj <
= 125°C
640
⎯
⎯
A
⎯
5
⎯
µs
110
118
125
⎯
98
⎯
11.0
12.0
12.5
12.0
12.5
13.0
1
2
3
ms
Min
Typ.
Max
Unit
IGBT
⎯
⎯
0.033
FRD
⎯
⎯
0.068
Compound is applied
⎯
0.013
⎯
toff (OC)
Trip level
OT
Reset level
OTr
Trip level
UV
Reset level
UVr
Fault output pulse width
Test Condition
tFO
VD = 15 V
Case temperature
⎯
VD = 15 V
A
°C
V
3. Thermal resistance (Tc = 25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
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°C/W
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MIG400Q2CMB1X
Switching Time Test Circuit
Intelligent power module
TLP559 (IGM)
C1
VD
0.1 µF
15 kΩ
OUT
IN
15 V
VS
68 µF
GND
GND
C2/E1
VCC
VD
IF =
16 mA
0.1 µF
15 kΩ
OUT
IN
PG
15 V
VS
68 µF
GND
E2
GND
Timing Chart
Input pulse
15 V
VIN Waveform
2.5 V
1.6 V
0
90% Irr
Irr
IC Waveform
90%
VCE Waveform
10%
toff
10%
tc (off)
10%
ton
20% Irr
trr
10%
tc (on)
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4. Recommended conditions for application
Characteristics
Supply voltage
Symbol
VCC
Test Condition
P-N power terminal
Control supply voltage
VD
VD-GND signal terminal
Carrier frequency
fc
PWM control
Dead time
Switching time test circuit
tdead
(Note 2)
Min
Typ.
Max
Unit
⎯
600
800
V
13.5
15
16.5
V
⎯
⎯
20
kHz
5
⎯
⎯
µs
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When
specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead
time given above.
Dead Time Timing Chart
15 V
VIN Waveform
0
15 V
VIN Waveform
0
tdead
tdead
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IC – VCE
IC – VCE
900
900
800
800
VD = 15 V
400
300
200
100
(A)
500
VD = 13 V
IC
IC
600
VD = 17 V
700
600
Collector current
(A)
700
Collector current
VD = 17 V
500
0
1
2
3
Collector-emitter voltage
300
200
Common emitter
Tj = 125°C
0
4
VCE
VD = 15 V
400
100
Common emitter
Tj = 25°C
0
VD = 13 V
5
0
(V)
1
Switching time – IC
VCE
ton
1
(µs)
ton
toff
tc (on)
tc (off)
0.1
toff
1
tc (on)
tc (off)
0.1
Tj = 125°C
VCC = 600 V
VD = 15 V
L-LOAD
0.01
0.01
0
100
200
300
Collector current IC
400
500
0
100
(A)
IF – VF
300
400
500
(A)
trr, Irr – IF
Peak reverse recovery current Irr (A)
Reverse recovery time trr (× 10 ns)
1000
800
700
600
500
400
300
200
Common cathode
: Tj = 25°C
: Tj = 125°C
100
0
0
200
Collector current IC
900
(A)
(V)
Switching time – IC
Tj = 25°C
VCC = 600 V
VD = 15 V
L-LOAD
Forward current IF
5
10
Switching time
(µs)
4
Collector-emitter voltage
10
Switching time
3
2
1
2
Forward voltage
3
VF (V)
Irr
100
trr
10
Common cathode
: Tj = 25°C
: Tj = 125°C
1
4
0
100
200
Forward current
300
400
500
IF (A)
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MIG400Q2CMB1X
OC – Tc
ID – fc
60
(mA)
ID
1000
800
Control circuit current
Over current protection trip level
OC
(A)
1200
600
400
200
50
40
30
20
10
VD = 15 V
Tj = 25°C
VD = 15 V
0
0
0
50
25
75
100
Case temperature
Tc
125
150
0
5
(°C)
10
Carrier frequency
Reverse bias SOA
Rth (t) (°C/W)
Transient themal resistance
IC
(A)
OC
640
Collector current
480
320
Tj <
= 125°C
VD = 15 V
0
0
400
800
1400
1200
Collector-emitter voltage
VCE
fc (kHz)
0.3
Diode stage
0.1
0.03
Transistor stage
0.01
0.003
0.001
Tc = 25°C
0.0003
0.001
0.01
0.1
Pulse width
Eon – IC
1
10
tw (s)
Eoff – IC
(mJ)
100
10
Eoff
10
1
0.1
0
VCC = 600 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
Turn off loss
Eon (mJ)
25
1
(V)
100
Turn on loss
20
Rth (t) – tw
720
160
15
1
VCC = 600 V
VD = 15 V
L-LOAD
: Tj = 25°C
: Tj = 125°C
0.1
100
200
300
Collector current IC (A)
400
500
0
100
200
300
400
500
Collector current IC (A)
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