TPCP8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications Unit: mm 0.33±0.05 0.05 M A 5 8 • • • 2.4±0.1 Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 mΩ (typ.) High forward transfer admittance :|Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 10 µA (VDS = 30 V) Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) 0.475 1 4 B 0.05 M B 0.65 2.9±0.1 2.8±0.1 • • A 0.8±0.05 S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage 1.12 +0.13 -0.12 Symbol Rating Unit VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V 1．Source1 5．Drain2 2．Gate1 6．Drain2 3．Source2 7．Drain1 4．Gate2 8．Drain1 0.28 +0.1 -0.11 JEDEC ― JEITA ― DC (Note 1) ID 4.2 Pulse (Note 1) IDP 16.8 Single-device operation (Note 3a) PD (1) 1.48 Weight: 0.017 g (typ.) Single-device value at dual operation (Note 3b) PD (2) 1.23 Circuit Configuration Single-device operation (Note 3a) PD (1) 0.58 Single-device value at dual operation (Note 3b) PD (2) 0.36 Single pulse avalanche energy (Note 4) EAS 2.86 mJ Avalanche current IAR 2.1 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.12 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) A W TOSHIBA 2-3V1G 8 7 6 5 1 2 3 4 Marking (Note 6) 8 7 6 5 Note: For Notes 1 to 6, refer to the next page. 8201 This transistor is an electrostatic-sensitive device. Handle with caution. ＊ 1 2 3 4 Lot No. 1 2004-07-06 TPCP8201 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 84.5 Rth (ch-a) (2) 101.6 Rth (ch-a) (1) 215.5 Rth (ch-a) (2) 347.2 Unit °C/W °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 2.1 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature. Note 6: ● on the lower left of the marking indicates Pin 1. ※ Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2004-07-06 TPCP8201 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 2.1 A ⎯ 58 77 VGS = 10 V, ID = 2.1 A ⎯ 38 50 VDS = 10 V, ID = 2.1 A 3.5 7.0 ⎯ ⎯ 470 ⎯ ⎯ 60 ⎯ ⎯ 80 ⎯ ⎯ 5.2 ⎯ ⎯ 8.3 ⎯ ⎯ 4.0 ⎯ ⎯ 22 ⎯ ⎯ 10 ⎯ ⎯ 1.7 ⎯ ⎯ 2.4 ⎯ Min Typ. Max Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 0V ton 4.7 Ω Turn-on time ID = 2.1 A VOUT 10 V RL = 7.14Ω Drain-source breakdown voltage tf toff Qgs1 Gate-drain (“miller”) charge Qgd V mΩ S pF ns VDD ∼ − 15 V Duty < = 1%, tw = 10 µs Qg Gate-source charge 1 V VDD ≈ 24 V, VGS = 10 V, ID = 6 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition ⎯ IDRP VDSF IDR = 4.2 A, VGS = 0 V 3 Unit ⎯ ⎯ 16.8 A ⎯ ⎯ −1.2 V 2004-07-06 TPCP8201 ID – VDS ID – VDS 4.5 10 3.8 3.5 8.0 Drain current ID (A) 10 10 Ta = 25°C Pulse test 6.0 4 3 3.2 2 3.0 1 Common source 8.0 6.0 4.5 Common source Drain current ID (A) 5 8 Ta = 25°C Pulse test 3.8 6 3.5 4 3.2 2 3.0 VGS = 2.8 V 0 0 0.2 0.4 Drain−source voltage VDS 0 1.0 0.8 0.6 VGS = 2.8 V 0 (V) 1 Drain−source voltage ID – VGS VDS (V) VDS – VGS 2.0 8 Common source (V) Common source VDS = 10 V VDS Pulse test 6 Drain−source voltage Drain current ID (A) 5 4 3 2 4 2 25 100 0 Ta = −55°C 0 1 2 Gate−source voltage VGS Pulse test 1.2 0.8 0.4 2 5 0 (V) 2 6 4 Gate-source voltage ⎪Yfs⎪ – ID 100 ID = 4A 1 0 4 3 Ta= 25℃ 1.6 10 8 VGS (V) RDS (ON) – ID 100 Common source Drain−source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) VDS = 10 V Pulse test Ta = −55°C 10 100 25 1 4.5 30 VGS = 10V Common source Ta = 25°C 0.1 0 0.3 1 3 10 0.1 10 Drain current ID (A) Pulse test 1 10 Drain current ID (A) 4 2004-07-06 TPCP8201 RDS (ON) – Ta IDR – VDS 10 120 10 Drain reverse current IDR (A) Drain−source ON resistance RDS (ON) (m Ω) Common source Pulse test 100 ID = 4A 2A 80 1A VGS = 4.5V 60 VGS = 10V 40 ID = 4, 2, 1A 20 5.0 3.0 5 1.0 3 VGS = 0 V 1 0.5 0.3 Common source Ta = 25°C Pulse test 0 −80 −40 0 40 80 Ambient temperature Ta 120 0.1 0 160 -0.4 -0.2 (°C) Capacitance – VDS Gate threshold voltage Vth (V) Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 0.3 3 5 10 Drain−source voltage 30 50 1 Common source VDS = 10 V ID = 200μA Pulse test 0 −80 100 −40 VDS (V) 1.2 VDS (V) 0.8 (3) 0.4 (4) 25 50 75 100 120 Ta 160 (°C) 125 Ambient temperature 150 Ta 175 15 30 Drain−source voltage Drain power dissipation PD (W) (2) 80 Dynamic input/output characteristics Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s (1) 40 Ambient temperature PD – Ta 2.0 0 25 VDD = 24V (°C) VGS 20 10 VDS VDD = 6V 15 12 10 24 6 12 5 ID = 4.0A Pulse test 0 4 8 Total gate charge Qg 5 Common source Ta = 25°C 5 0 200 (V) 1 0.1 2 12 16 Gate−source voltage VGS (pF) Capacitance C 100 0 0 -1.2 -1.0 (V) Vth – Ta Ciss 1.6 -0.8 3 1000 10 -0.6 Drain-source voltage VDS 0 (nC) 2004-07-06 TPCP8201 rth – tw Transient thermal impedance rth (℃/W) 1000 Single pulse (4) (3) (2) (1) 100 10 1 0.001 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 (A) ID max (Pulse) * 1 ms * Drain current ID 10 10 ms * 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 100 VDS (V) 6 2004-07-06 TPCP8201 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-06