TPC6602 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6602 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −10 V Emitter-base voltage VEBO −7 V DC IC −2.0 Pulse ICP −3.5 IB −200 PC 1.6 Collector current Base current t = 10 s Collector power dissipation (Note) DC Junction temperature Storage temperature range A mA 0.8 JEDEC ― W JEITA ― Tj 150 °C TOSHIBA 2-3T1 Tstg −55~150 °C Weight: 0.011 g (typ.) Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −20 V, IE = 0 ⎯ ⎯ −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA V (BR) CEO IC = −10 mA, IB = 0 −10 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.2 A 200 ⎯ 500 Collector-emitter breakdown voltage DC current gain hFE (2) VCE = −2 V, IC = −0.6 A 125 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −0.6 A, IB = −0.02 A ⎯ ⎯ −0.19 V Base-emitter saturation voltage VBE (sat) IC = −0.6 A, IB = −0.02 A ⎯ ⎯ −1.10 V pF Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf VCB = −10 V, IE = 0, f = 1 MHz ⎯ 12 ⎯ See Figure 1 circuit diagram. ⎯ 50 ⎯ VCC ∼ − −6 V, RL = 10 Ω ⎯ 115 ⎯ IB1 = −IB2 = −20 mA ⎯ 25 ⎯ 1 ns 2004-07-07 TPC6602 IB2 Input IB1 RL VCC 20 µs IB1 Output IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Circuit Configuration 6 5 Marking 4 Lot code (month) Part No. (or abbreviation code) 1 2 Pin #1 3 2 Lot No H3B Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2004-07-07 TPC6602 IC – VCE hFE – IC −2 10000 −60 −40 −20 hFE −1.6 DC current gain Collector current IC (A) −80 −10 −1.2 −6 −0.8 −4 Common emitter VCE = −2 V Single pulse test 1000 Ta = 100°C 100 25 IB = −2 mA −0.4 10 −0.001 Common emitter Ta = 25°C Single pulse test 0 0 −0.2 −0.4 −0.6 −0.8 Collector-emitter voltage −1 VCE −0.01 −1 −10 (V) VBE (sat) – IC −10 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 30 Single pulse test −0.1 Ta = 100°C 25 −55 −0.01 −0.001 −0.001 −0.1 Collector current IC (A) −1.2 VCE (sat) – IC −1 Collector-emitter saturation voltage VCE (sat) (V) −55 −0.01 −0.1 −1 Common emitter IC/IB = 30 Single pulse test −55 Ta = 100°C −0.1 −0.001 −10 Collector current IC (A) 25 −1 −0.01 −0.1 −1 −10 Collector current IC (A) IC – VBE Collector current IC (A) −2 −1.6 Common emitter VCE = −2 V Single pulse test −1.2 −0.8 −0.4 0 0 Ta = 100°C −0.4 25 −55 −0.8 Base-emitter voltage −1.2 VBE −1.6 (V) 3 2004-07-07 TPC6602 rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single pulse Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, 1 0.001 2 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area −10 IC max (Pulse) * 10 ms* 1 ms* 100 ms* −1 10 s* DC operation (Ta = 25°C) −0.1 *: Single pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 Collector-emitter voltage VCEO max Collector current IC (A) IC max (continuous) −10 VCE −100 (V) 4 2004-07-07 TPC6602 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07