PANASONIC DMA20403

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20403
Silicon PNP epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
 Features

Package

Basic Part Number

Code
Mini6-G4-B

Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
 High forward current transfer ratio hFE with excellent linearity
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
DSA2001 + DSA2002 (Individual)

Marking Symbol: B9
 Packaging

Internal Connection
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
(C1)
6

Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Tr2
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
A
Collector-base voltage (Emitter open)
VCBO
–60
V
Collector-emitter voltage (Base open)
VCEO
–50
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–500
mA
Peak collector current
ICP
–1
A
Total power dissipation
PT
300
mW
Tj
150
°C
Tstg
–55 to +150
°C
Overall Junction temperature
Storage temperature
Publication date: April 2010
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
ZJJ00794AED
(B2)
5
Tr1
1
(E1)
(E2)
4
Tr2
2
(B1)
3
(C2)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20403

Electrical Characteristics Ta = 25°C±3°C

Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –10 V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –2 mA
460

– 0.5
V
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
210
IC = –100 mA, IB = –10 mA
– 0.2
VCB = –10 V, IE = –2 mA
150
MHz
2
pF
VCB = –10 V, IE = 0, f = 1 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–60
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
hFE1
VCE = –10 V, IC = –150 mA
120
hFE2
VCE = –10 V, IC = –500 mA
40
Collector-emitter saturation voltage
VCE(sat)
IC = –300 mA, IB = –30 mA
– 0.2
– 0.6
V
Base-emitter saturation voltage
VBE(sat)
IC = –300 mA, IB = –30 mA
– 0.9
–1.5
V
fT
VCE = –10 V, IC = –50 mA
130
VCB = –10 V, IE = 0, f = 1 MHz
7.3
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
– 0.1
340
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
DMA20403_PT-Ta
PT  Ta
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
2
ZJJ00794AED
µA

MHz
15
pF
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20403
Characteristics
charts of Tr1
DMA20403(Tr1)_IC-VCE
DMA20403(Tr1)_hFE-IC
−120
IB = −600 µA
−500 µA
−400 µA
−300 µA
−60
−200 µA
−40
−100 µA
−20
0
0
−2
−4
−6
−8
−10
500
400
0
− 0.1
−12
Collector current IC (mA)
−30°C
−60
−40
−20
− 0.8
−1.2
1.0
−400 µA
−300 µA
−40
−200 µA
−100 µA
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Forward current transfer ratio hFE
Collector current IC (mA)
IB = −500 µA
−20
100
50
250
25°C
150
−30°C
100
−10
50
Collector current IC (mA)
ZJJ00794AED
−1 000
IC / IB = 10
−1
− 0.1
−100
−100
VCE(sat)  IC
Ta = 85°C
−10
−10
DMA20403(Tr2)_VCEsat-IC
200
0
−1
−1
Collector current IC (mA)
hFE  IC
VCE = −10 V
−60
150
DMA20403(Tr2)_hFE-IC
Ta = 25°C
VCE = −10 V
Ta = 25°C
200
0
− 0.1
−100
300
−80
0
−10
250
Collector-base voltage VCB (V)
IC  VCE
−100
fT  IC
2.0
Characteristics
charts of Tr2
DMA20403(Tr2)_IC-VCE
−10
DMA20403(Tr1)_fT-IC
3.0
0
−1
−1
Collector current IC (mA)
IE = 0
f = 1 MHz
Ta = 25°C
4.0
Base-emitter voltage VBE (V)
−100
− 0.01
− 0.1
Collector current IC (mA)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
25°C
− 0.4
−100
Ta = 85°C
25°C
−30°C
Cob  VCB
Ta = 85°C
0
−10
IC / IB = 10
−1
DMA20403(Tr1)_Cob-VCB
−120
0
−1
−10
− 0.1
−30°C
100
IC  VBE
−80
25°C
200
DMA20403(Tr1)_IC-VBE
−100
Ta = 85°C
300
Collector-emitter voltage VCE (V)
VCE = −10 V
VCE = −10 V
Transition frequency fT (MHz)
−80
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
−100
Forward current transfer ratio hFE
600
Ta = 25°C
DMA20403(Tr1)_VCEsat-IC
hFE  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
− 0.01
−1
Ta = 85°C
25°C
−30°C
−10
−100
−1 000
Collector current IC (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20403
DMA20403(Tr2)_IC-VBE
DMA20403(Tr2)_Cob-VCB
25°C
Collector current IC (mA)
−500
Ta = 85°C
−400
−30°C
−300
−200
−100
0
0
− 0.4
− 0.8
−1.2
Base-emitter voltage VBE (V)
4
25
fT  IC
IE = 0
f = 1 MHz
Ta = 25°C
20
15
10
5
0
−1
−10
−100
Collector-base voltage VCB (V)
ZJJ00794AED
200
Transition frequency fT (MHz)
−600
VCE = −10 V
DMA20403(Tr2)_fT-IC
Cob  VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IC  VBE
VCE = −10 V
Ta = 25°C
160
120
80
40
0
− 0.1
−1
−10
Collector current IC (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20403
Mini6-G4-B
Unit: mm
+0.20
2.90 −0.05
+0.10
0.50 −0.05
+0.05
0.13 −0.02
+0.10
0.30 −0.05
4
6°
2.8 −0.3
+0.2
1.50 −0.05
2
3
(0.95)
(0.95)
1.9 ±0.1
(0.65)
1
0.4 ±0.2
5
+0.25
6
+0.3
1.1 −0.1
0 to 0.1
1.1 −0.1
+0.2
8°
ZJJ00794AED
5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202