DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: T1 Basic Part Number DRC2144E + DRA2143X (Collector-base connection) Packaging DMG563H10R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Tj 150 °C Tstg –55 to +150 °C Collector current Tr2 Overall Junction temperature Storage temperature Publication date: February 2013 Ver. BED 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Panasonic JEITA Code 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) SMini5-F3-B SC-113CB SOT-353 (B2, C1) 5 (C2) 4 R1 Tr1 R2 1 (E1) Resistance value Tr1 Tr2 R1 Tr2 R2 2 (B1) 3 (E2) R1 47 kΩ R2 47 kΩ R1 4.7 kΩ R2 10 kΩ 1 DMG563H1 Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA Input voltage (ON) VI(on) VCE = 0.2 V, IC = 5 mA Input voltage (OFF) VI(off) VCE = 5 V, IC = 100 µA 80 0.25 3.6 V V 0.8 V Input resistance R1 –30% 47 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Max Unit Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 –1.0 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA 30 – 0.25 –1.7 V V – 0.6 V Input resistance R1 –30% 4.7 +30% kΩ Resistance ratio R1 / R2 0.37 0.47 0.57 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. BED 2 DMG563H1 Common characteristics chart DMG563H1_PT-Ta PT Ta Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG563H1(Tr1)_IC-VCE DMG563H1(Tr1)_hFE-IC 120 IB = 500 µA 450 µA 400 µA Forward current transfer ratio hFE Collector current IC (mA) 500 Ta = 25°C 100 350 µA 300 µA 80 250 µA 60 200 µA 150 µA 40 100 µA 20 0 50 µA 0 2 4 6 8 10 400 Ta = 85°C 300 25°C −30°C 200 100 0 0.1 12 1 100 Collector current IC (mA) DMG563H1(Tr1)_IO-VIN DMG563H1(Tr1)_VIN-IO 10 IC / IB = 20 1 0.1 Ta = 85°C −30°C 25°C 0.01 0.1 1 10 100 Collector current IC (mA) VIN IO 100 VO = 5 V VO = 0.2 V Ta = 85°C Input voltage VIN (V) Output current IO (mA) 10 Collector-emitter voltage VCE (V) 1 25°C 10−1 −30°C 10−2 10−3 VCE(sat) IC VCE = 10 V IO VIN 10 DMG563H1(Tr1)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 0 0.5 1.0 1.5 Input voltage VIN (V) 2.0 10 Ta = −30°C 25°C 85°C 1 0.1 0.1 1 10 100 Output current IO (mA) Ver. BED 3 DMG563H1 Characteristics charts of Tr2 DMG563H1(Tr2)_IC-VCE DMG563H1(Tr2)_hFE-IC −120 IB = −800 µA Collector current IC (mA) −100 −700 µA −600 µA −80 −500 µA −400 µA −60 −300 µA −40 −200 µA −20 Forward current transfer ratio hFE 300 Ta = 25°C DMG563H1(Tr2)_VCEsat-IC hFE IC VCE(sat) IC VCE = −10 V 250 Ta = 85°C 200 25°C 150 −30°C 100 50 −100 µA 0 0 −2 −4 −6 −8 −10 0 − 0.1 −12 Collector current IC (mA) DMG563H1(Tr2)_IO-VIN DMG563H1(Tr2)_VIN-IO IC / IB = 20 −1 Ta = 85°C − 0.1 − 0.01 − 0.1 −30°C 25°C −1 −10 −100 Collector current IC (mA) −100 VO = − 0.2 V Ta = 85°C Input voltage VIN (V) Output current IO (mA) −100 −10 VIN IO VO = −5 V −1 25°C −10−1 −30°C −10−2 −10−3 −10 Collector-emitter voltage VCE (V) IO VIN −10 −1 Collector-emitter saturation voltage VCE(sat) (V) IC VCE 0 − 0.5 −1.0 −1.5 Input voltage VIN (V) −2.0 −10 25°C −1 − 0.1 − 0.1 Ta = −30°C 85°C −1 −10 −100 Output current IO (mA) Ver. BED 4 DMG563H1 SMini5-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. BED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202