Silicon Junction FETs (Small Signal) 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 ■ Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation PD 300 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 1 2 3 1.27 1.27 2.0±0.2 Symbol 0.7±0.1 marking Parameter +0.2 0.45–0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package 2.54±0.15 ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS* Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDS IG = −10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Forward transfer admittance | Yfs | VDS = 10V, ID = 1mA, f = 1kHz Drain to Source ON-resistance RDS(on) VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss * min typ 0.2 max Unit 6 mA −10 nA −65 V −1.5 1.8 2.5 −3.5 V mS 250 Ω 7 pF 1.3 pF 1.5 pF IDSS rank classification Runk O P Q R IDSS (mA) 0.2 to 1 0.6 to 1.5 1 to 3 2.5 to 6 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 2.5 Ta=25˚C 350 250 200 150 100 2.0 Drain current ID (mA) 2.0 300 VGS=0V 1.5 – 0.1V – 0.2V 1.0 – 0.3V – 0.4V 0.5 Ta=–25˚C 1.5 25˚C 1.0 75˚C 0.5 50 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 | Yfs | VGS 4 3 IDSS=10mA 2 1 Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25˚C – 0.4 0 VDS=10V Ta=25˚C 2.0 IDSS=10mA 1.5 1.0 0.5 Gate to source voltage VGS (V) 0 1 2 3 4 5 0 Ciss, Coss, Crss VDS 0 – 0.8 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 Gate to source voltage VGS (V) | Yfs | ID 2.5 –1.2 0 –1.2 6 Drain to source voltage VDS (V) 5 0 –1.6 5 6 Drain current ID (mA) 7 8 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 0 Forward transfer admittance |Yfs| (mS) ID VGS 2.5 Drain current ID (mA) Allowable power dissipation PD (mW) 400 2 2SK1104 10 VGS=0 f=1MHz Ta=25˚C 8 6 Ciss 4 2 Coss Crss 0 1 3 10 30 100 Drain to source voltage VDS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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