Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET unit: mm For switching 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage Symbol 15.6±0.5 (0.8) 0.75 max. ■ Absolute Maximum Ratings (Ta = 25°C) Parameter 7.6 ■ Features 0.45+0.20 –0.10 Ratings Unit Drain to Source breakdown voltage VDSS Gate to Source voltage VGSO 8 V Drain current ID 100 mA Max drain current IDP 200 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 50 0.45+0.20 –0.10 (2.5) (2.5) 0.7±0.1 V 1 2 3 1: Source 2: Drain 3: Gate NS-B1 Package Internal Connection D R1 G R2 S ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = 8V, VDS = 0 40 Drain to Source breakdown voltage VDSS ID = 100µA, VGS = 0 50 Gate threshold voltage Vth ID = 100µA, VDS = VGS 1.5 Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V Forward transfer admittance | Yfs | ID = 20mA, VDS = 5V, f = 1kHz 20 High level output voltage VOH VDD = 5V, VGS = 1V, RL = 200Ω 4.5 Low level output voltage VOL VDD = 5V, VGS = 5V, RL = 200Ω Input resistance R1 + R2*1 Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss max Unit 10 µA 80 µA V 3.5 V 50 Ω 35 mS V 100 Input capacitance (Common Source) Ciss Output capacitance (Common Source) typ 1 V 200 kΩ 9 pF 4.5 pF 1.1 pF Turn-on time ton*2 VDD = 5V, VGS = 0 to 5V, RL = 200Ω 1 µs Turn-off time *2 VDD = 5V, VGS = 5 to 0V, RL = 200Ω 1 µs *1 *2 toff Resistance ratio R1/R2 = 1/50 Pulse measurement Note) The part number in the parenthesis shows conventional part number. 285 Silicon MOS FETs (Small Signal) 2SK0656 PD Ta ID VDS 120 120 100 160 120 80 40 100 VGS=6.0V 80 5.5V 5.0V 60 4.5V 40 4.0V Drain current ID (mA) 200 3.5V 20 80 Ta=–25˚C 25˚C 60 75˚C 40 20 3.0V 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) Forward transfer admittance |Yfs| (mS) 30 20 10 0 4 6 8 10 8 6 4 Coss 2 0 0.1 0.3 1 3 10 30 100 Drain to source voltage VDS (V) VIN IO 1000 VO=5V Ta=25˚C 300 1 100 Input voltage VIN (V) 3 0.3 0.1 0.03 0.01 0.003 VO=1V Ta=25˚C 30 10 3 1 0.3 0.001 0 1 2 3 0 2 4 Input voltage VIN (V) 5 0.1 0.1 0.3 1 3 10 4 6 8 10 Gate to source voltage VGS (V) RDS(on) VGS Ciss IO VIN 286 10 VGS=0 f=1MHz Ta=25˚C 10 Gate to source voltage VGS (V) 10 8 Ciss, Coss VDS 40 2 6 12 VDS=5V Ta=25˚C 0 4 Drain to source voltage VDS (V) | Yfs | VGS 50 2 30 Output current IO (mA) 100 Drain to source ON-resistance RDS(on) (Ω) 0 Output current IO (mA) VDS=5V Ta=25˚C Drain current ID (mA) Allowable power dissipation PD (mW) 240 ID VGS 120 ID=20mA 100 80 60 Ta=75˚C 40 25˚C –25˚C 20 0 0 2 4 6 8 10 Gate to source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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