Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm ■ Features 5.0±0.2 0.7±0.2 5.1±0.2 ● Low ON-resistance RDS(on) ● High-speed switching ● Allowing to be driven directly by CMOS and TTL 4.0±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Drain to Source voltage Ratings Unit 80 V VDS VGSO Drain current Max drain current 2.5+0.6 –0.2 20 V ID ±0.5 A IDP ±1 A Allowable power dissipation PD 750 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 2.5+0.6 –0.2 1 2 3 2.3±0.2 Gate to Source voltage 0.45+0.15 –0.1 0.45+0.15 –0.1 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92-A1 Package ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min Drain to Source cut-off current IDSS VDS = 60V, VGS = 0 Gate to Source leakage current IGSS VGS = 20V, VDS = 0 Drain to Source breakdown voltage VDSS IDS = 100µA, VGS = 0 80 Gate threshold voltage Vth ID = 1mA, VDS = VGS 1.5 Drain to Source ON-resistance RDS(on)*1 ID = 0.5A, VGS = 10V Forward transfer admittance | Yfs | ID = 0.2A, VDS = 15V, f = 1kHz typ max Unit 10 µA 0.1 µA V 2 3.5 V 4 Ω 300 mS 45 pF 30 pF 8 pF Turn-on time ton *2 15 ns Turn-off time toff*2 20 ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss *1 *2 Pulse measurement t on, toff measurement circuit Vout 68Ω Vin = 10V t = 1µS f = 1MHZ Vin 50Ω VDD = 30V 10% Vin 10% 90% 90% V Vout out ton toff Note) The part number in the parenthesis shows conventional part number. 277 Silicon MOS FETs (Small Signal) 2SK0614 PD Ta ID VDS 1.2 1.2 Ta=25˚C 600 400 5V 0.8 4.5V 0.6 4V 0.4 0.8 0.6 0.4 3.5V 200 0.2 0.2 3V 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 300 200 100 0 1 2 3 4 5 6 Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) RDS(on) Ta 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 –50 –25 0 25 50 75 Ambient temperature Ta (˚C) 278 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 400 0 4 6 8 10 0 2 120 80 60 40 Ciss 20 Coss Crss 0 1 3 10 30 100 300 6 8 10 RDS(on) VGS VGS=0 f=1MHz Ta=25˚C 100 4 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS VDS=15V f=1kHz Ta=25˚C 500 2 Drain to source voltage VDS (V) | Yfs | VGS 600 Forward transfer admittance |Yfs| (mS) 1.0 Drain current ID (A) 800 VDS=10V Ta=25˚C VGS=5.5V 1.0 Drain current ID (A) 1000 1000 Drain to source voltage VDS (V) Drain to source ON-resistance RDS(on) (Ω) Allowable power dissipation PD (mW) 1200 ID VGS 6 ID=500mA 5 4 3 Ta=75˚C 2 25˚C –25˚C 1 0 0 4 8 12 16 20 Gate to source voltage VGS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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