Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings (Ta = 25°C) Unit Drain to Source voltage VDSO 20 V Drain to Gate voltage VDGO 20 V Drain to Source current IDSO 2 mA Drain to Gate current IDGO 2 mA Gate to Source current IGSO 2 mA Allowable power dissipation PD 200 mW Operating ambient temperature Topr −20 to +80 °C Storage temperature Tstg −55 to +150 °C 1.1+0.2 –0.1 10˚ Ratings 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 0.4±0.2 ● High mutual conductance gm ● Low noise voltage of NV 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 1: Drain 2: Source 3: Gate Mini3-G1 Package Marking Symbol: 1H Note: For the forming type, (Y) is indicated after the part No. ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min typ max Unit Current consumption ID VD = 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1% 100 600 µA Drain to Source cut-off current IDSS VDS = 4.5 V, VGS = 0 95 480 µA Mutual conductance gm VD = 4.5 V, VGS = 0, f = 1 kHz 0.7 Noise figure NV GV2 GV3 Voltage gain difference VD = 4.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV, f = 1 kHz VD = 12 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV, f = 1 kHz mS 4 CO = 10 pF, A-curve GV1 Voltage gain 1.6 VD = 4.5V, RD = 2.2 kΩ ± 1% µV −3 2 dB 0 3.3 dB −4.5 − 0.3 dB ∆|GV2 − GV1| VD = 1.5 V, RD = 2.2 kΩ ± 1% 0 +3.5 dB ∆|GV1 − GV3| CO = 10 pF, eG = 10 mV, f = 1 kHz 0 +3.5 dB Note) The part number in the parenthesis shows conventional part number. Publication date: January 2002 SJF00005BED 1 2SK0123 PD T a ID VDS 600 VGS = 0 V 160 120 80 40 500 0.30 0.25 Drain current ID (mA) Drain current ID (mA) 200 − 0.05 V 0.20 − 0.10 V 0.15 0.10 − 0.15 V 0.05 − 0.20 V 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (°C) 2 4 6 8 10 gm VGS 12 gm ID 2.0 Mutual conductance gm (mS) VDS = 4.5 V f = 1 kHz Ta = 25°C 1.6 1.2 IDSS = 0.3 mA 0.8 0.4 VDS = 4.5 V f = 1 kHz Ta = 25°C 1.6 1.2 IDSS = 0.3 mA 0.8 0.4 0.15 mA 0 −1.0 − 0.8 − 0.6 − 0.4 − 0.2 Gate to source voltage VGS (V) 0 0 0 0.1 0.2 0.3 0.4 Drain current ID (mA) SJF00005BED 300 Ta = 75°C 200 25°C Drain to source voltage VDS (V) 2.0 400 100 0 0 2 VDS = 4.5 V Ta = 25°C 0.35 0 Mutual conductance gm (mS) ID VGS 0.40 Topr max. Allowable power dissipation PD (mW) 240 0.5 0 − 0.5 − 0.4 − 0.3 −25°C − 0.2 − 0.1 Gate to source voltage VGS (V) 0 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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