TOSHIBA TPC8113

TPC8113
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8113
Lithium Ion Battery Applications
Notebook PC Applications
Unit: mm
Portable Equipment Applications
•
Small footprint due to small and thin package
•
Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 23 S (typ.)
•
Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
•
Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
±20
V
(Note 1)
ID
−11
Drain current
DC
A
Pulse (Note 1)
IDP
−44
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation (t = 10 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
31.5
mJ
Avalanche current
IAR
−11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.19
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC8113
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(Note 2a)
(t = 10 s)
Rth (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(Note 2b)
(t = 10 s)
Rth (ch-a)
125
°C/W
Marking (Note 5)
TPC8113
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
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TPC8113
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
⎯
⎯
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
⎯
⎯
Vth
VDS = −10 V, ID = −1 mA
−0.8
⎯
−2.0
VGS = −4 V, ID = −5.5 A
⎯
12
18
VGS = −10 V, ID = −5.5 A
⎯
8
10
VDS = −10 V, ID = −5.5 A
11
23
⎯
⎯
4500
⎯
⎯
540
⎯
⎯
650
⎯
⎯
6
⎯
⎯
13
⎯
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-ON time
ton
VDS = −10 V, VGS = 0 V, f = 1 MHz
0V
VGS
−10 V
Fall time
4.7 Ω
Switching time
tf
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
toff
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
ID = −5.5 A
VOUT
RL = 2.7 Ω
Drain-source breakdown voltage
VDD ∼
− −15 V
Duty <
= 1%, tw = 10 µs
VDD ∼
− −24 V, VGS = −10 V,
ID = −11 A
V
V
mΩ
S
pF
ns
⎯
120
⎯
⎯
340
⎯
⎯
107
⎯
⎯
12
⎯
⎯
20
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
−44
A
⎯
⎯
1.2
V
VDSF
IDR = −11 A, VGS = 0 V
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TPC8113
ID – VDS
−10
−8
−10
−3
−5
−4
−2.5
Common source
Ta = 25°C
Pulse test
−2.4
−2.2
−4
−2.1
−2
−4
−6
Drain-source voltage
−8
−2.7
−2.4
−12
−2.3
−8
−2.2
VGS = −2.1 V
−8
−4
VDS (V)
VDS (V)
(V)
Common source
Ta = 25°C
Pulse test
−0.4
VDS
Drain-source voltage
Drain current
ID
(A)
−30
−20
−10
100
−1
−0.3
−0.2
ID = −11 A
−3
−4
VGS
0
0
−5
(V)
−2.5
−8
−4
|Yfs| – ID
50
50
Drain-source ON resistance
RDS (ON) (mΩ)
30
Ta = −55°C
25
10
100
3
1
Common source
VDS = −10 V
Pulse test
0.5
−1
−3
Drain current
−16
VGS
−20
(V)
RDS (ON) – ID
100
−0.3 −0.5
−12
Gate-source voltage
100
5
−5.5
−0.1
Ta = −55°C
−2
Gate-source voltage
(S)
−20
VDS – VGS
25
|Yfs|
−16
−0.5
Common source
VDS = −10 V
Pulse test
Forward transfer admittance
−12
Drain-source voltage
ID – VGS
0.3
−0.1
−2.5
−5
Common source
Ta = 25°C
Pulse test
−4
0
0
−10
−40
0
0
−2.6
−4
VGS = −2 V
−2
−3
(A)
ID
Drain current
−6
0
0
−10
−16
−2.3
(A)
ID
Drain current
ID – VDS
−20
−5
−10
30
VGS = −4.5 V
10
−10
5
3
1
Common source
Ta = 25°C
Pulse test
0.5
0.3
−0.1
−30 −50
ID (A)
−0.3 −0.5
−1
−3
Drain current
4
−5
−10
−30 −50
ID (A)
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TPC8113
RDS (ON) – Ta
IDR – VDS
−100
25
Common source
IDR (A)
15
VGS = −4.5 V
10
ID = −11 A, −5.5 A, −2.5 A
−10
−40
0
40
80
Ambient temperature
Ta
120
−1
Common source
Ta = 25°C
Pulse test
−0.1
0
160
VGS = 0 V
−1
0.2
(°C)
0.4
0.6
Drain-source voltage
Capacitance – VDS
0.8
VDS (V)
Vth – Ta
−2.5
50000
Common source
Vth (V)
10000
Ciss
5000
Gate threshold voltage
Capacitance
C
(pF)
30000
3000
1000
500
300
Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
−0.3
−10
−3
−30
VDS = −10 V
Pulse test
−1.5
−1
−0.5
0
−80
−100
ID = −1 mA
−2
−40
0
40
80
Ambient temperature
Drain-source voltage
(2)
0.8
0.4
0
0
(V)
−25
−20
Drain-source voltage
1.2
25
50
75
100
Ambient temperature
(°C)
Dynamic Input/Output Characteristics
VDS
(W)
Drain power dissipation
PD
1.6
160
−30
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
(1)
Ta
120
VDS (V)
PD – Ta
2.0
1
125
Ta
150
(°C)
−10
VDD = −24 V
−6
−12
−8
VDS
VDD = −24 V
−12
−6
−15
−6
Common source
VGS
−10
ID = −11 A
−4
Ta = 25°C
Pulse test
−2
−5
0
0
175
−12
20
40
60
80
100
120
VGS (V)
0
−80
−3
−10
Gate-source voltage
20
Drain reverse current
Drain-source ON resistance
RDS (ON) (mΩ)
ID = −11 A, −5.5 A, −2.5 A
5
−5
−10
Pulse test
0
140
Total gate charge Qg (nC)
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TPC8113
rth − tw
1000
(°C/W)
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2)
rth
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
Normalized transient thermal impedance
100
(1)
t = 10 s
10
1
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
100
ID max (pulse)*
1 ms*
10 ms*
Drain current
ID
(A)
10
1
0.1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
0.1
VDSS max
1
Drain-source voltage
10
100
VDS (V)
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TPC8113
RESTRICTIONS ON PRODUCT USE
•
030619EAA
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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