VISHAY SI1405BDH

New Product
Si1405BDH
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
rDS(on) (Ω)
ID (A)c
0.112 at VGS = - 4.5 V
- 1.6
0.160 at VGS = - 2.5 V
- 1.6
0.210 at VGS = - 1.8 V
- 1.6
• TrenchFET® Power MOSFET
Qg (Typ)
APPLICATIONS
3.67 nC
RoHS
• Load Switch for Portable Devices
COMPLIANT
SOT-363
SC-70 (6-LEADS)
1
6
D
D
2
5
D
G
3
4
S
Marking Code
BO
XX
YY
D
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1405BDH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-8
Gate-Source Voltage
VGS
±8
TC = 70 °C
TA = 25 °C
- 1.6c
ID
- 1.6a, b, c
- 1.6a, b, c
TA = 70 °C
TC = 25 °C
Continuous Source-Drain Diode Currenta, b
TA = 25 °C
Maximum Power Dissipationa, b
- 1.6c
IS
- 1.47a, b
TC = 25 °C
2.27
TC = 70 °C
1.45
TA = 25 °C
PD
Soldering Recommendations (Peak Temperature)
W
1.47a, b
0.95a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 8c
IDM
Pulsed Drain Current (10 µs Pulse Width)
V
-1.6c
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
Unit
- 55 to 150
c, d
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambienta, d
Maximum Junction-to-Foot (Drain)
Symbol
Typical
Maximum
t≤5s
RthJA
70
85
Steady State
RthJF
44
55
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 74634
S-71945-Rev. A, 10-Sep-07
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New Product
Si1405BDH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = - 250 µA
-8
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = - 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
1.98
- 0.45
- 0.95
V
- 100
nA
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
rDS(on)
V
- 5.4
-8
µA
A
VGS = - 4.5 V, ID = - 2.8 A
0.091
0.112
VGS = - 2.5 V, ID = - 2.3 A
0.132
0.160
VGS = - 1.8 V, ID = - 0.5 A
0.171
0.205
VDS = - 4 V, ID = - 2.8 A
4.8
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
305
VDS = - 4 V, VGS = 0 V, f = 1 MHz
66
3.67
VDS = - 4 V, VGS = - 4.5 V, ID = - 2.8 A
td(off)
5.5
0.61
nC
0.98
Ω
f = 1 MHz
6.3
10
15
VDD = - 4 V, RL = 1.78 Ω
ID ≅ - 2.25 A, VGEN = - 4.5 V, Rg = 1 Ω
26
39
16
24
7
10.5
td(on)
tr
pF
108
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.6
-8
IS = 1.4 A, VGS = 0 V
IF = - 1.4 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
23
35
ns
5.8
8.7
nC
6
17
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74634
S-71945-Rev. A, 10-Sep-07
New Product
Si1405BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
3.0
VGS = 5 V thru 2.5 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
6
VGS = 2 V
4
2
VGS = 1.5 V
1
2
3
TJ = 25 °C
1.2
TJ = 125 °C
0.6
0
0
1.8
TJ = - 55 °C
0.0
0.0
4
0.4
VDS - Drain-to-Source Voltage (V)
1.6
2.0
Transfer Characteristics
500
0.5
0.4
400
C - Capacitance (pF)
VGS = 1.8 V
0.3
0.2
VGS = 2.5 V
VGS = 4.5 V
0.1
Ciss
300
200
Coss
100
Crss
0
0.0
0
2
4
6
0
8
2
4
6
8
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.8
ID = 2.8 A
VDS = 4 V
4
1.5
r DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
r DS(on) - D to S On-Resistance (Ω)
0.8
3
VDS = 6.4 V
2
1
VGS = 4.5 V, ID = 2.8 A
VGS = 2.5 V, ID = 2.3 A
1.2
VGS = 1.8 V, ID = 0.5 A
0.9
0.6
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74634
S-71945-Rev. A, 10-Sep-07
4
5
0.3
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si1405BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.24
100
ID = 2.8 A
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.18
TA = 125 °C
0.12
TA = 25 °C
0.06
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
30
25
0.8
ID = 250 µA
Power (W)
V GS(th) (V)
20
0.7
0.6
15
10
0.5
0.4
- 50
5
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
Limited by r DS(on)*
100 ms
1s
I D - Drain Current (A)
1
10 s
DC
0.1
0.01
TA = 25 °C
Single Pulse
0.001
0.1
BVDSS Limited
1
* VGS
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74634
S-71945-Rev. A, 10-Sep-07
New Product
Si1405BDH
Vishay Siliconix
5
3.0
4
2.4
3
1.8
Power
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1.2
Package Limited
1
0.6
0
0.0
0
25
50
75
100
125
150
0
TC - Case Temperature (°C)
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
Current Derating*
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA =100 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74634.
Document Number: 74634
S-71945-Rev. A, 10-Sep-07
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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