TOSHIBA SSM6P54TU

SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
2.1±0.1
1.5 V drive
Suitable for high-density mounting due to compact package
Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V)
: Ron = 350 mΩ (max) (@ VGS = -1.8 V)
Symbol
Rating
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±8
V
DC
ID
-1.2
Pulse
IDP
-2.4
Drain current
Drain power dissipation
PD(Note 1)
Unit
A
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 ~ 150
°C
2
5
3
4
1.Sorce1
2.Gate1
3.Drain2
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
+0.1
0.3-0.05
6
0.7±0.05
Characteristics
1
+0.06
0.16-0.05
Absolute Maximum Ratings (Ta = 25°C)
0.65 0.65
: Ron = 555 mΩ (max) (@ VGS = -1.5 V)
1.3±0.1
1.7±0.1
2.0±0.1
•
•
•
Unit : mm
4.Source 2
5.Gate2
6.Drain1
Note:
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Min
Typ.
Max
V (BR) DSS
Symbol
ID = −1 mA, VGS = 0
−20
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = +8 V
−12
⎯
⎯
⎯
⎯
−10
μA
μA
Drain cut-off current
IDSS
Gate leakage current
IGSS
Test Condition
VDS = −20 V, VGS = 0
VGS = ± 8 V, VDS = 0
⎯
⎯
±1
⎯
−1.0
V
(Note 2)
1.7
3.4
⎯
S
ID = -0.6 A, VGS = -2.5 V
(Note 2)
⎯
162
228
ID = -0.6 A, VGS = -1.8 V
(Note 2)
⎯
212
350
ID = -0.1 A, VGS = -1.5 V
(Note 2)
⎯
249
555
⎯
331
⎯
⎯
48
⎯
⎯
39
⎯
Vth
VDS = −3 V, ID = −1 mA
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -0.6 A
Drain-Source on-resistance
RDS (ON)
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Switching time
f = 1 MHz
ton
VDD = −10 V, ID = −0.6 A
⎯
19
⎯
Turn-off time
toff
VGS = 0 ~ −2.5 V, RG = 4.7 Ω
⎯
18
⎯
⎯
7.7
⎯
⎯
4.9
⎯
⎯
2.8
⎯
⎯
0.8
1.2
Qg
Gate-Source charge
Qgs
Gate-Drain charge
Qgd
Drain-Source forward voltage
Note 2:
VDS = −10 V, VGS = 0
Turn-on time
Total gate charge
VDSF
V
−0.3
Gate threshold voltage
Input capacitance
Unit
VDS = −16 V, IDS = -1.2 A,
VGS = − 4 V
ID = 1.2 A, VGS = 0
(Note 2)
mΩ
pF
ns
nC
V
Pulse test
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SSM6P54TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−2.5 V
RG
−2.5V
10 μs
RL
VDD
VDS (ON)
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
Marking
6
5
2
10%
VDD
tr
ton
tf
toff
Equivalent Circuit (top view)
4
6
5
4
Q1
PJ
1
90%
(c) VOUT
Q2
3
1
2
3
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA
for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a
lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
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2007-11-01
SSM6P54TU
ID – VDS
-2.5
Common Source
VDS = -3 V
-1.8 V
-2
-1000
(mA)
-2.5 V
-1.5 V
-100
ID
-1.5
Drain current
(A)
ID
Drain current
ID – VGS
-10000
-4 V
-1
VGS = -1.2 V
-0.5
Ta = 85 °C
-10
25 °C
-1
−25 °C
-0.1
0
Common Source
Ta = 25 °C
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
-0.2
(V)
-0.4
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
300
25 °C
200
Ta = 85 °C
100
−25 °C
50
0
0
-4
-2
-6
Gate - Source voltage
ID = -0.6 A
Common Source
300
250
25 °C
200
Ta = 85 °C
150
100
−25 °C
50
0
VGS (V)
-2
-4
Gate - Source voltage
RDS (ON) – ID
-6
-8
VGS (V)
RDS (ON) – Ta
500
Common Source
400
Common Source
Ta = 25 °C
Drain – Source on-resistance
RDS (ON) (mΩ)
Drain – Source on-resistance
RDS (ON) (mΩ)
-1.6
350
0
-8
450
350
300
VGS = -1.5 V
250
200
-1.8 V
150
-2.5 V
100
50
0
-1.4
VGS (V)
400
350
150
-1.2
RDS (ON) – VGS
Common Source
250
-1.0
450
ID = -0.1 A
400
-0.8
Gate - Source voltage
RDS (ON) – VGS
450
-0.6
0
-0.5
-1
Drain current
-2
-1.5
ID
300
(A)
-0.6 A / -1.8 V
200
-0.6 A / -2.5 V
100
0
−50
-2.5
ID = -0.1 A / VGS = -1.5 V
400
0
50
Ambient temperature
3
100
Ta
150
(°C)
2007-11-01
SSM6P54TU
Vth (V)
Gate threshold voltage
Common Source
-0.7
-0.5
VDS = -3 V
ID = -1 mA
10
Forward transfer admittance
-0.6
(S)
|Yfs| – ID
30
⎪Yfs⎪
Vth – Ta
-0.8
-0.4
-0.3
-0.2
-0.1
0
−25
0
25
50
75
100
Ambient temperature
Ta
125
150
Common Source
VDS = -3 V
Ta = 25 °C
3
1
0.3
0.1
0.03
0.01
1
Drain current
(°C)
C – VDS
5000
-100
-10
-1000
ID
-10000
(mA)
Dynamic Input Characteristic
-10
-8
VGS
Gate-Source voltage
(pF)
500
Capacitance
1000
C
(V)
3000
Ciss
300
100
50
Common Source
30
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
-0.1
Coss
Crss
-1
-10
Drain – Source voltage
VDS
-4
-2
0
-100
VDD = -16 V
-6
Common Source
ID = -1.2 A
Ta = 25 °C
0
5
10
Total gate charge
(V)
15
Qg
20
(nC)
t – ID
IDR – VDS
100
Common Source
VGS = 0 V
(A)
toff
-2
IDR
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
Drain reverse current
Switching time
tf
ton
10
tr
1
0.01
Drain current
1
ID
10
IDR
G
S
-1
-0.5
0
0.1
D
Ta = 25 °C
-1.5
t
(ns)
1000
0
0.2
0.4
0.6
Drain-Source voltage
(A)
4
0.8
VDS
1
1.2
(V)
2007-11-01
SSM6P54TU
rth (°C /W)
Transient thermal impedance
rth – tw
1000
100
Single Pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
10
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
PD – Ta
1.2
PD * (W)
Mounted on FR4 board
Drain power dissipation
1
0.001
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
t = 10s
* Total Rating
0.8
0.6
DC
0.4
0.2
0
0
50
Ambient temperature
5
100
Ta
150
(°C)
2007-11-01
SSM6P54TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01