TOSHIBA TLP630

TLP630
TOSHIBA Photocoupler
GaAs IRed & Photo−Transistor
TLP630
Unit in mm
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP630 consists of a photo−transistor optically coupled to
two gallium arsenide infrared emitting diode connected inverse parallel
in a six lead plastic DIP package.
•
Collector−emitter voltage: 55V min.
•
Current transfer ratio: 50% min.
Rank GB: 100% min.
•
Isolation voltage: 5000Vrms min.
•
UL recognized: UL1577 file no. E67349
TOSHIBA
11−7A8
Weight: 0.4g
Pin Configurations(top view)
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TLP630
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Unit
Forward current
IF(RMS)
60
mA
Forward current derating
(Ta ≥ 39°C)
ΔIF / °C
−0.7
mA / °C
IFPT
±1
A
Collector−emitter voltage
VCEO
55
V
Collector−base voltage
VCBO
80
V
Emitter−collector voltage
VECO
7
V
Emitter−base voltage
VEBO
7
V
Collector current
IC
50
mA
Power dissipation
PC
150
mW
ΔPC / °C
−1.5
mW / °C
Operating temperature range
Topr
−55~100
°C
Storage temperature range
Tstg
−55~125
°C
Lead soldering temperature
Tsol
260(10s)
°C
Junction temperature
Tj
125
°C
Total package power dissipation
PT
250
mW
Total package power dissipation
derating
ΔPT / °C
−2.5
mW / °C
BVS
5000
Vrms
LED
Characteristic
Detector
Peak forward current
(100μs pulse,100pps)
Power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(AC, 1 min., R.H. ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
―
5
24
V
Forward current
IF(RMS)
―
16
25
mA
Collector current
IC
―
1
10
mA
Topr
−25
―
85
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Individual Electrical Characteristics (Ta = 25°C)
LED
Characteristic
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Forward current
IF
VF = 0.7V
―
2.5
10
μA
Capacitance
CT
V = 0, f = 1MHz
―
60
―
pF
V(BR)CEO IC = 0.5mA
55
―
―
V
V(BR)ECO IE = 0.1mA
7
―
―
V
V(BR)CBO IC = 0.1mA
80
―
―
V
V(BR)EBO IE = 0.1mA
7
―
―
V
VCE = 24V
―
10
100
nA
VCE = 24V, Ta = 85°C
―
2
50
μA
Collector−emitter breakdown
voltage
Emitter−collector breakdown
voltage
Detector
Symbol
Collector−base breakdown
voltage
Emitter−base breakdown
voltage
Collector dark current
ID(ICEO)
Collector dark current
ICBO
VCB = 10V
―
0.1
―
nA
CCE
V = 0, f = 1MHz
―
10
―
pF
Unit
Capacitance
(collector to emitter)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current
Test Condition
Min.
Typ.
Max.
IC / IF
IF = ±5mA, VCE = 5V
Rank GB
50
―
600
100
―
600
IC / IF(sat)
IF = ±1mA, VCE = 0.4V
Rank GB
―
60
―
30
―
―
IF = ±5mA, VCB = 5V
⎯
10
―
μA
VCE(sat)
IC = 2.4mA, IF = ±8mA
―
―
0.4
V
IC(off)
VF = ±0.7V, VCE = 24V
―
1
10
μA
0.33
1
3
―
IPB
Collector−emitter saturation
voltage
Off−state collector current
CTR symmetry
Symbol
IC(ratio)
IC(IF = −5mA) /
IC(IF = +5mA)
(Note 1)
%
%
(Note 1)
I (I = I
V
= 5V)
IC(ratio) = C2 F F2, CE
IC1(IF = IF1, VCE = 5V)
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Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Symbol
CS
RS
Test Condition
Min.
Typ.
Max.
Unit
―
0.8
―
pF
10
―
Ω
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Vdc
Min.
Typ.
Max.
Unit
―
2
―
―
3
―
―
3
―
―
3
―
―
2
―
―
15
―
―
25
―
―
2
―
―
12
―
―
20
―
VS = 0, f = 1MHz
VS = 500V, R.H. ≤ 60%
AC, 1 minute
Isolation voltage
BVS
10
5×10
14
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
tON
Turn−off time
tOFF
Turn−on time
tON
Storage time
tS
Turn−off time
tOFF
Turn−on time
tON
Storage time
tS
Turn−off time
tOFF
(Note 2)
Test Condition
VCC = 10V, IC = 2mA
RL = 100Ω
RL = 1.9 kΩ
(Note 2)
RBE = OPEN
VCC = 5 V, IF = ±16mA
RL = 1.9kΩ
(Note 2)
RBE = 220kΩ, VCC = 5 V
IF = ±16mA
μs
μs
μs
Switching time test circuit
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RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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