TPC6108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC6108 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7.4 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −4.5 Pulse (Note 1) IDP −18 Drain power dissipation(t = 5 s) (Note 2a) PD 2.2 Drain power dissipation(t = 5 s) (Note 2b) PD 0.7 Single pulse avalanche energy (Note 4) EAS 1.3 mJ Avalanche current IAR −2.25 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.22 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Source Drain Drain Drain Drain Gate A W JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Circuit Configuration 6 5 4 1 2 3 Thermal Characteristics Characteristics Symbol Thermal resistance, channel to ambient(t = 5 s) (Note 2a) Thermal resistance, channel to ambient(t = 5 s) (Note 2b) Max Unit Rth (ch-a) 56.8 °C/W Rth (ch-a) 178.5 °C/W Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2004-10-28 TPC6108 TENTATIVE Electrical Characteristics (Ta = 25°C) IGSS Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Max Unit ±10 µA µA VDS = −30 V, VGS = 0 V −10 ID = −10 mA, VGS = 0 V −30 V (BR) DSX ID = −10 mA, VGS = 20 V −15 Vth VDS = −10 V, ID = − 1 mA −0.8 −2.0 RDS (ON) VGS = −4.5 V, ID = −2.2 A 75 100 RDS (ON) VGS = −10 V, ID = −2.2 A 50 60 |Yfs| VDS = −10 V, ID = −2.2 A 3.7 7.4 570 75 85 ID = −2.2 A VOUT 3.5 12 21 70 13 1.8 2.5 Ciss Crss Output capacitance Coss tr VDS = −10 V, VGS = 0 V, f = 1 MHz VGS 0 V −10 V ton Switching time Fall time Typ. IDSS Reverse transfer capacitance Turn-on time VGS = ±16 V, VDS = 0 V Min V (BR) DSS Input capacitance Rise time Test Condition RL = 6.8 Ω Gate leakage current Symbol 4.7 Ω Characteristics tf V V mΩ S pF ns VDD ∼ − −15 V Turn-off time Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge1 Qgs1 Gate-drain (“miller”) charge Qgd Duty < = 1%, tw = 10 µs VDD ∼ − −24 V, VGS = −10 V, ID = −4.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP −18 A 1.2 V VDSF IDR = −4.5 A, VGS = 0 V 2 2004-10-28 TPC6108 Marking (Note 5) TENTATIVE Lot code (month) Lot No. (weekly code) S3H Part No. (or abbreviation code) Product-specific code Pin #1 Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V,Tch = 25°C (initial),L = 0.2 mH,RG = 25 Ω,IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ● on lower left of the marking indicates Pin 1. 3 2004-10-28 TPC6108 TENTATIVE RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-10-28