New Product Si1472DH Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.057 at VGS = 10 V 5.6a 0.082 at VGS = 4.5 V 4.7 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 5.5 RoHS APPLICATIONS COMPLIANT • Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S AL XX YY Marking Code Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 30 ± 20 5.6 4.5 ID V 4.2b, c 3.4b, c 15 10 5 2.3 IDM IAS EAS IS A mJ A 1.3b, c 2.8 1.8 PD 1.5b, c 1.0b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 73891 S-71344–Rev. B, 09-Jul-07 www.vishay.com 1 New Product Si1472DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductance rDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 5.6 1 3 V ± 100 nA VDS = 30 V, VGS = 0 V 1 nA VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA VDS = ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 4.2 A 15 A 0.046 0.057 VGS = 4.5 V, ID = 3.5 A 0.065 0.082 VDS = 15 V, ID = 4.2 A 8.5 S 75 pF 45 VDS = 15 V, VGS = 10 V, ID = 4.2 A 7 11 3.3 5 VDS = 24V, VGS = 4.5 V, ID = 4.2 A 1.2 f = 1 MHz 7.1 10.6 7.0 11 56 84 18 27 VDD = 15 V, RL = 4.4 Ω ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω tf 5.5 9 15 23 95 143 12 18 7 11 tr nC 1.0 td(on) td(off) Ω 380 VDS = 15 V, VGS = 0 V, f = 1 MHz td(on) td(off) V 25.15 VDD = 15 V, RL = 5.4 Ω ID ≅ 2.8 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω ns ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 2.3 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 15 IS = 1.8 A IF = 2.3 A, di/dt = 100 A/µs A 0.8 1.2 V 12.3 19 nC 5 7.5 7.6 ns 4.7 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73891 S-71344–Rev. B, 09-Jul-07 New Product Si1472DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 15 3 V = 10 thru 5 V 12 V GS I D – Drain Current (A) I D – Drain Current (A) GS = 4V 9 6 2 TC = 125 °C 1 V = 3V GS 3 TC = 25 °C TC = - 55 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics curves vs. Temp 0.10 500 400 VGS = 4.5 V C – Capacitance (pF) rDS(on) – On-Resistance (Ω) Ciss 0.08 0.06 VGS = 10 V 0.04 300 200 Coss 0.02 100 0.00 0 0 3 6 9 12 15 Crss 0 6 ID – Drain Current (A) 12 18 24 30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.8 10 8 VDS = 15 V 6 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) ID = 4.2 A VGS = 24 V 4 1.5 VGS = 10 V ID = 4.2 A 1.2 VGS = 4.5 V ID = 3.4 A 0.9 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Qg - Gate Charge Document Number: 73891 S-71344–Rev. B, 09-Jul-07 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ – Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1472DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.10 rDS(on) – Drain-to-Source On-Resistance (Ω) I S – Source Current (A) 10 1 TJ = 150 °C TJ = 25 °C 0.1 I D = 4.2 A 0.08 TA = 125 °C 0.06 0.04 TA = 25 °C 0.02 0.01 0 0.2 0.4 0.6 0.8 0 1 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage rDS(on) vs VGS vs Temperature 2.6 30 2.4 25 2.2 20 Power (W) ID = 250 µA VGS(th) (V) 4 2.0 1.8 15 10 1.6 5 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (°C) 0.1 1 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 *Limited by rDS(on) I D – Drain Current (A) 10 P(t) = 10 ms P(t) = 100 ms 1 P(t) = 1 s P(t) = 10 s dc 0.1 TA = 25 °C Single Pulse 0.01 0.1 *VGS BVDSS Limited 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73891 S-71344–Rev. B, 09-Jul-07 New Product Si1472DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3.5 6.0 3.0 5.0 2.5 Power ID – Drain Current (A) Package Limited 4.0 3.0 2.0 1.5 2.0 1.0 1.0 0.5 0.0 0.0 0 25 50 75 100 TC – Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC – Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73891 S-71344–Rev. B, 09-Jul-07 www.vishay.com 5 New Product Si1472DH Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73891. www.vishay.com 6 Document Number: 73891 S-71344–Rev. B, 09-Jul-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1