Si5855DC Vishay Siliconix New Product P-Channel 1.8-V (G-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY D TrenchFETr Power MOSFETS D Ultra Low Vf Schottky D Si5853DC Pin Compatible VDS (V) rDS(on) (W) ID (A) 0.110 @ VGS = - 4.5 V - 3.6 - 20 0.160 @ VGS = - 2.5 V - 3.0 APPLICATIONS 0.240 @ VGS = - 1.8 V - 2.4 D Charging Circuit in Portable Devices SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.375 V @ 1 A 1.0 S K D A 1206-8 ChipFETr 1 A K G A K S D G Marking Code JB D XXX Lot Traceability and Date Code Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5855DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage (MOSFET) VDS Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS "8 Continuous Drain Current (TJ = 150_C) (MOSFET)a TA = 25_C TA = 85_C Pulsed Drain Current (MOSFET) IS Average Foward Current (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c V - 3.6 - 2.7 - 2.6 - 1.9 - 10 - 1.8 IF Pulsed Foward Current (Schottky) Maximum Power Dissipation (Schottky)a - 20 IDM Continuous Source Current (MOSFET Diode Conduction)a Maximum Power Dissipation (MOSFET)a ID - 0.9 7 TA = 25_C 2.1 1.1 TA = 85_C 1.1 0.6 1.9 1.1 1.0 0.56 PD TA = 85_C TJ, Tstg A 1.0 IFM TA = 25_C Unit - 55 to 150 260 W _C Notes a. Surface Mounted on 1” x1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72232 S-31406—Rev. A, 07-Jul-03 www.vishay.com 1 Si5855DC Vishay Siliconix New Product THERMAL RESISTANCE RATINGS Parameter Device t v 5 sec JJunction-to-Ambient ti t A bi ta Symbol Typical Maximum MOSFET 50 60 Schottky 54 65 90 110 95 115 30 40 30 40 MOSFET St d State Steady St t Junction to Foot Junction-to-Foot Steady State RthJA Schottky MOSFET Schottky RthJF Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = - 250 mA - 0.45 Typ Max Unit - 1.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V -1 VDS = - 16 V, VGS = 0 V, TJ = 85_C -5 VDS v - 5 V, VGS = - 4.5 V - 10 mA A VGS = - 4.5 V, ID = - 2.7 A 0.095 0.110 rDS(on) VGS = - 2.5 V, ID = - 2.2 A 0.137 0.160 VGS = - 1.8 V, ID = - 1 A 0.205 0.240 gfs VDS = - 10 V, ID = - 2.7 A 7 VSD IS = - 0.9 A, VGS = 0 V - 0.8 - 1.2 4.4 6.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.4 VDS = - 10 V,, VGS = - 4.5 V,, ID = - 2.7 A nC 0.65 VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W IF = - 0.9 A, di/dt = 100 A/ms 16 25 30 45 30 45 27 40 20 40 Typ Max ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Maximum Reverse Leakage g Current Junction Capacitance www.vishay.com 2 Symbol VF Irm CT Test Condition Min IF = 1 A 0.34 0.375 IF = 1 A, TJ = 125_C 0.255 0.290 Vr = 20 V 0.05 0.500 Vr = 20 V, TJ = 85_C 2 20 Vr = 20 V, TJ = 125_C 10 100 Vr = 10 V 90 Unit V mA pF Document Number: 72232 S-31406—Rev. A, 07-Jul-03 Si5855DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 10 10 VGS = 5 thru 3 V TC = - 55_C 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 2V 4 2 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25_C 6 125_C 4 2 0 0.0 4.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 3.0 800 0.5 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) VGS = 1.8 V 0.4 0.3 VGS = 2.5 V 0.2 Ciss 600 400 200 VGS = 4.5 V Coss 0.1 0.0 Crss 0 0 2 4 6 8 0 10 4 ID - Drain Current (A) 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 2.7 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 4 3 2 1 VGS = 4.5 V ID = 2.7 A 1.4 1.2 1.0 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 72232 S-31406—Rev. A, 07-Jul-03 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si5855DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 TJ = 150_C TJ = 25_C 1 0.0 ID = 2.7 A r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 0.3 0.2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 VSD - Source-to-Drain Voltage (V) 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 50 0.3 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) 3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 -4 150 10 -3 10 -2 TJ - Temperature (_C) 10 -1 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited I D - Drain Current (A) 10 rDS(on) Limited P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 TA = 25_C Single Pulse P(t) = 1 P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72232 S-31406—Rev. A, 07-Jul-03 Si5855DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance MOSFET Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 1 TJ = 150_C TJ = 25_C 0.001 0.0001 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (_C) Document Number: 72232 S-31406—Rev. A, 07-Jul-03 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) www.vishay.com 5 Si5855DC Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 600 CT - Junction Capacitance (pF) SCHOTTKY 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 6 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72232 S-31406—Rev. A, 07-Jul-03