Si4310BDY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY FEATURES VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.011 @ VGS = 10 V 10 0.016 @ VGS = 4.5 V 8.2 0.0085 @ VGS = 10 V 14 0.0095 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters − Game Stations − Video Equipment SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 2.0 SO-14 D1 D1 1 14 S1 D1 2 13 S1 G1 3 12 D2 G2 4 11 D2 S2 5 10 D2 S2 6 9 D2 S2 7 8 D2 D2 G1 Schottky Diode G2 Ordering Information: Si4310BDY—E3 Si4310BDY-T1—E3 (with Tape and Reel) S1 S2 N-Channel 1 MOSFET Top View N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID 10 secs Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS PD Steady State 10 secs Steady State 30 "20 7.5 14 9.8 8 6 11 7.8 40 A 50 1.8 1.04 2.73 1.33 2 1.14 3.0 1.47 1.28 0.73 1.9 0.94 TJ, Tstg Unit V "20 10 IDM Continuous Source Current (Diode Conduction)a Channel-2 W −55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Channel-2 Schottky Typ Max Typ Max Typ Max 53 62.5 34 35 40 48 92 110 70 72 76 93 35 42 17 24 21 26 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 1 Si4310BDY New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) VDS = VGS, ID = 250 mA IGSS VDS = 0 V, V VGS = "20 V VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = 5 V, V VGS = 10 V Ch-1 1.0 3.0 Ch-2 1.0 3.0 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 V nA mA 4000 Ch-1 20 Ch-2 30 A VGS = 10 V, ID = 10 A Ch-1 0.009 0.011 VGS = 10 V, ID = 14 A Ch-2 0.0065 0.0085 VGS = 4.5 V, ID = 8.2 A Ch-1 0.013 0.016 VGS = 4.5 V, ID = 13 A Ch-2 0.0075 0.0095 VDS = 15 V, ID = 10 A Ch-1 30 VDS = 15 V, ID = 14 A Ch-2 60 IS = 1.8 A, VGS = 0 V Ch-1 0.76 1.1 IS = 2.73 A, VGS = 0 V Ch-2 0.485 0.53 W S V Dynamica Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain Ch-1 790 1580 2370 Ch-2 1530 3060 4590 Ch-1 145 290 435 Ch-2 300 600 900 Ch-1 70 140 210 Ch-2 115 225 340 Ch-1 12 18 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-2 19 30 Ch-1 5.3 Channel-2 Channel 2 VDS = 15 1 V, V VGS = 4.5 V V, ID = 14 1 A Ch-2 10 Ch-1 4.3 Ciss i Rg VDS = 15 V, V VGS = 0 V V, f= 1 MHz Ch-2 f = 1 MHz td(on) d( ) tr td(off) d( ff) Channel-1 Channel 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 Channel 2 VDD = 1 15 V V, RL = 1 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W tf trr pF nC 5 Ch-1 0.90 1.8 2,7 Ch-2 0.3 0.95 1.4 Ch-1 13 20 Ch-2 17 26 Ch-1 10 15 Ch-2 12 20 Ch-1 33 50 Ch-2 53 80 Ch-1 10 15 Ch-2 17 26 IF = 1.8 A, di/dt = 100 A/ms Ch-1 25 40 IF = 2.73 A, di/dt = 100 mA/ms Ch-2 31 50 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 Si4310BDY New Product Vishay Siliconix SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance Test Condition CT Min Typ Max IF = 3 A 0.485 0.53 IF = 3 A, TJ = 125_C 0.42 0.42 0.100 Vr = 30 V 0.008 Vr = 30 V, TJ = 75_C 0.4 5 Vr = −30 V, TJ = 125_C 6.5 20 Vr = 15 V 102 mA CHANNEL-1 Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 35 30 35 4V I D − Drain Current (A) I D − Drain Current (A) V pF TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 25 20 15 10 5 30 25 20 15 TC = 125_C 10 5 25_C 3V 0 0 1 2 3 4 0 0.0 5 VDS − Drain-to-Source Voltage (V) −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.020 2000 0.016 1600 Ciss VGS = 4.5 V C − Capacitance (pF) r DS(on) − On-Resistance ( W ) Unit 0.012 VGS = 10 V 0.008 0.004 1200 800 400 0.000 Coss Crss 0 0 5 10 15 20 ID − Drain Current (A) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 25 30 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) www.vishay.com 3 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-1 Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 10 A VGS = 10 V ID = 10 A 8 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 10 6 4 2 1.4 1.2 1.0 0.8 0 0 5 10 15 20 0.6 −50 25 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) I S − Source Current (A) 50 0.05 30 TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 0.04 ID = 10 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD − Source-to-Drain Voltage (V) 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 200 0.2 160 −0.0 Power (W) V GS(th) Variance (V) ID = 250 mA −0.2 80 −0.4 40 −0.6 −0.8 −50 0 −25 0 25 50 75 TJ − Temperature (_C) www.vishay.com 4 120 100 125 150 0.001 0.01 0.1 1 10 Time (sec) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) I D − Drain Current (A) 100 CHANNEL-1 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 1 100 ms 0.1 1s TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2 Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 10 30 20 TC = 125_C 10 25_C 3V −55_C 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS − Drain-to-Source Voltage (V) 1.5 On-Resistance vs. Drain Current 3.5 4.0 Capacitance 3500 0.012 0.009 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 3.0 4000 VGS = 4.5 V 0.006 VGS = 10 V Ciss 3000 2500 2000 1500 1000 0.003 Coss Crss 500 0.000 0 0 10 20 30 40 0 50 5 ID − Drain Current (A) 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.6 VDS = 15 V ID = 14 A 5 VGS = 10 V ID = 14 A 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 2.5 VGS − Gate-to-Source Voltage (V) 0.015 4 3 2 1.2 1.0 0.8 1 0 0 5 10 15 Qg − Total Gate Charge (nC) www.vishay.com 6 2.0 20 25 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL-2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.020 50 r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.016 ID = 14 A 0.012 0.008 0.004 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 VSD − Source-to-Drain Voltage (V) 8 10 Single Pulse Power 200 10 160 1 120 Power (W) I R − Reverse Current (mA) Reverse Current vs. Junction Temperature 100 VDS = 24 V VDS = 30 V 6 VGS − Gate-to-Source Voltage (V) 0.1 80 0.01 40 0.001 0 0.001 0.0001 0 25 50 75 100 125 150 0.01 TJ − temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 7 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance CHANNEL-2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10−1 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 5 1 0.1 30 V I F − Forward Current (A) I R − Reverse Current (mA) 10 20 V 0.01 0.001 0.0001 1 TJ = 25_C 0.1 0 25 50 75 100 TJ − Junction Temperature (_C) www.vishay.com 8 TJ = 150_C 125 150 0 0.2 0.4 0.6 0.8 VF − Forward Voltage Drop (V) Document Number: 73064 S-41530—Rev. A, 16-Aug-04 Si4310BDY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 500 C T − Junction Capacitance (pF) SCHOTTKY 400 300 200 100 0 0 6 12 18 24 30 VKA − Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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