Si4340DY Vishay Siliconix New Product Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0115 @ VGS = 4.5 V 12.8 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters - Game Stations - Notebook PC Logic SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 20 0.53 V @ 3 A 2.0 SO-14 D1 D1 1 14 S1 D1 2 13 S1 G1 3 12 D2 G2 4 11 D2 S2 5 10 D2 S2 6 9 D2 S2 7 8 D2 D2 G1 Schottky Diode G2 Ordering Information: Si4340DY Si4340DY-T1 (with Tape and Reel) S1 S2 N-Channel 1 MOSFET Top View N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID 10 secs Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS PD Steady State 10 secs Steady State 20 "20 7.3 13.5 9.5 7.7 5.8 10.8 7.5 40 A 50 1.8 1.04 2.73 1.30 2.0 1.14 3.0 1.43 1.28 0.73 1.9 0.91 TJ, Tstg Unit V "16 9.6 IDM Continuous Source Current (Diode Conduction)a Channel-2 W - 55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF Channel-2 Schottky Typ Max Typ Max Typ Max 53 62.5 35 42 40 48 92 110 72 87 76 93 35 42 18 23 21 25 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72376 S-31857—Rev. A, 15-Sep-03 www.vishay.com 1 Si4340DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) IGSS VDS = VGS, ID = 250 mA Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb rDS(on) DS( ) gfs f VSD 1.90 Ch-1 Ch 1 100 Ch-2 100 IDSS ID(on) D( ) 2.00 0.8 VDS = 0 V, VGS = "12 V VDS = 20 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State 0.8 Ch-2 VDS = 0 V, VGS = "20 V VDS = 20 V, V VGS = 0 V Zero Gate Voltage Drain Current Ch-1 VDS = 5 V, V VGS = 10 V Ch-1 Ch 1 1 Ch-2 100 Ch-1 Ch 1 15 nA mA 4000 Ch-2 Ch-1 Ch 1 20 Ch-2 30 A VGS = 10 V, ID = 9.6 A Ch-1 Ch 1 0.0095 VGS = 10 V, ID = 13.5 A Ch-2 0.007 0.010 VGS = 4.5 V, ID = 7.8 A Ch-1 Ch 1 0.0135 0.0175 VGS = 4.5 V, ID = 12.8 A Ch-2 0.0085 0.0115 VDS = 15 V, ID = 9.6 A Ch-1 Ch 1 25 VDS = 15 V, ID = 13.5 A Ch-2 38 IS = 1.8 A, VGS = 0 V Ch-1 Ch 1 0.74 1.1 Ch-2 0.485 0.53 Ch-1 10 15 Channel-1 Channel 1 VDS = 10 V, VGS = 4.5 V, ID = 9.6 A Ch-2 17 25 Ch-1 Ch 1 3.3 Channel 2 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = - 13.5 A Ch-2 4.5 Ch-1 Ch 1 3.1 IS = 2.73 A, VGS = 0 V V 0.012 W S V Dynamica Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Turn On Delay Time Turn-On Rise Time Rg td(on) d( ) tr Turn Off Delay Time Turn-Off Fall Time td(off) d( ff) Channel-1 Channel 1 VDD = 01 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 01 V, RL = 15 W ID ^ 1 A A, VGEN = 10 V V, RG = 6 W tf Source Drain Reverse Recovery Time Source-Drain trr 4.5 Ch-2 f = 1 MHz IF = 1.8 A, di/dt = 100 A/ms IF = 2.73 A, di/dt = 100 mA/ms nC Ch-1 Ch 1 0.45 0.9 1.35 Ch-2 0.7 1.4 2.1 Ch-1 Ch 1 15 25 Ch-2 24 35 Ch-1 Ch 1 16 25 Ch-2 22 35 Ch-1 Ch 1 42 65 Ch-2 68 100 Ch-1 Ch 1 16 25 Ch-2 19 30 Ch-1 Ch 1 35 60 Ch-2 38 65 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Typ Max IF = 3 A Min 0.485 0.53 IF = 3 A, TJ = 125_C 0.42 0.42 0.100 Vr = 20 V 0.008 Vr = 20 V, TJ = 75_C 0.4 5 Vr = - 20 V, TJ = 125_C 6.5 20 Vr = 15 V 102 Unit V mA pF Document Number: 72376 S-31857—Rev. A, 15-Sep-03 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 3V 10 30 20 TC = 125_C 10 25_C - 55_C 2V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 On-Resistance vs. Drain Current 3.0 3.5 4.0 4.5 Capacitance 1800 1500 0.016 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.5 VGS - Gate-to-Source Voltage (V) 0.020 VGS = 4.5 V 0.012 VGS = 10 V 0.008 0.004 Ciss 1200 900 Coss 600 Crss 300 0.000 0 0 10 20 30 40 0 50 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 9.6 A 4 3 2 VGS = 10 V ID = 9.6 A 1.4 1.2 1.0 0.8 1 0 0.0 12 1.6 r DS(on) - On-Resistance (W) (Normalized) 5 8 VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 2.0 2.6 5.2 7.8 10.4 Qg - Total Gate Charge (nC) Document Number: 72376 S-31857—Rev. A, 15-Sep-03 13.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.040 50 0.035 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 9.6A 0.030 0.025 0.020 0.015 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) Threshold Voltage 6 8 10 Single Pulse Power 0.4 200 0.2 160 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) - 0.2 120 80 - 0.4 40 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72376 S-31857—Rev. A, 15-Sep-03 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 92_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72376 S-31857—Rev. A, 15-Sep-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 2V 30 20 TC = 125_C 10 25_C - 55_C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 3.0 3.5 Capacitance 2500 0.012 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.5 3000 VGS = 4.5 V 0.009 VGS = 10 V 0.006 0.003 Ciss 2000 1500 Coss 1000 Crss 500 0.000 0 0 10 20 30 40 0 50 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 6 1.6 VDS = 10 V ID = 13.5 A 5 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 2.0 VGS - Gate-to-Source Voltage (V) 0.015 4 3 2 1 1.5 VGS = 10 V ID = 13.5 A 1.4 1.3 1.2 1.1 1.0 0.9 0 0 5 10 15 Qg - Total Gate Charge (nC) www.vishay.com 6 1.5 20 25 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72376 S-31857—Rev. A, 15-Sep-03 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.030 60 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.024 0.018 ID = 13.5 A 0.012 0.006 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 8 10 Single Pulse Power 200 10 160 1 120 Power (W) I R - Reverse Current (mA) Reverse Current vs. Junction Temperature 100 VDS = 16 V VDS = 20 V 6 VGS - Gate-to-Source Voltage (V) 0.1 80 0.01 40 0.001 0 0.001 0.0001 0 25 50 75 100 125 150 0.01 TJ - temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 72376 S-31857—Rev. A, 15-Sep-03 www.vishay.com 7 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance CHANNEL−2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 92_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10 -1 1 Square Wave Pulse Duration (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY Reverse Current vs. Junction Temperature Forward Voltage Drop 100 5 1 0.1 30 V I F - Forward Current (A) I R - Reverse Current (mA) 10 20 V 0.01 0.001 0.0001 1 TJ = 25_C 0.1 0 25 50 75 100 TJ - Junction Temperature (_C) www.vishay.com 8 TJ = 150_C 125 150 0 0.2 0.4 0.6 0.8 VF - Forward Voltage Drop (V) Document Number: 72376 S-31857—Rev. A, 15-Sep-03 Si4340DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 500 C T - Junction Capacitance (pF) SCHOTTKY 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 72376 S-31857—Rev. A, 15-Sep-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 9